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Results: 1-19 |
Results: 19

Authors: Hackenschmied, P Li, H Epelbaum, E Fasbender, R Batentschuk, M Winnacker, A
Citation: P. Hackenschmied et al., Energy transfer in Ba1-xSrxFBr : Eu storage phosphors as a function of Sr and Eu concentration, RADIAT MEAS, 33(5), 2001, pp. 669-674

Authors: Volz, E Roosen, A Hartung, W Winnacker, A
Citation: E. Volz et al., Electrical and thermal conductivity of liquid phase sintered SiC, J EUR CERAM, 21(10-11), 2001, pp. 2089-2093

Authors: Weingartner, R Bickermann, M Bushevoy, S Hofmann, D Rasp, M Straubinger, TL Wellmann, PJ Winnacker, A
Citation: R. Weingartner et al., Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC, MAT SCI E B, 80(1-3), 2001, pp. 357-361

Authors: Bickermann, M Epelbaum, BM Hofmann, D Straubinger, TL Weingartner, R Winnacker, A
Citation: M. Bickermann et al., Incorporation of boron and vanadium during PVT growth of 6H-SiC crystals, J CRYST GR, 233(1-2), 2001, pp. 211-218

Authors: Wellmann, PJ Hofmann, D Kadinski, L Selder, M Straubinger, TL Winnacker, A
Citation: Pj. Wellmann et al., Impact of source material on silicon carbide vapor transport growth process, J CRYST GR, 225(2-4), 2001, pp. 312-316

Authors: Birnstock, J Blassing, J Hunze, A Scheffel, M Stossel, M Heuser, K Wittmann, G Worle, J Winnacker, A
Citation: J. Birnstock et al., Screen-printed passive matrix displays based on light-emitting polymers, APPL PHYS L, 78(24), 2001, pp. 3905-3907

Authors: Steuber, F Staudigel, J Stossel, M Simmerer, J Winnacker, A Spreitzer, H Weissortel, F Salbeck, J
Citation: F. Steuber et al., White light emission from organic LEDs utilizing spiro compounds with high-temperature stability, ADVAN MATER, 12(2), 2000, pp. 130-133

Authors: Stossel, M Staudigel, J Steuber, F Blassing, J Simmerer, J Winnacker, A Neuner, H Metzdorf, D Johannes, HH Kowalsky, W
Citation: M. Stossel et al., Electron injection and transport in 8-hydroxyquinoline aluminum, SYNTH METAL, 111, 2000, pp. 19-24

Authors: Osvet, A Emelianova, S Weissmann, R Arbuzov, VI Winnacker, A
Citation: A. Osvet et al., Spectral hole burning in Sm2+-doped alkaliborate glasses and Tb3+-doped silicate and borate glasses, J LUMINESC, 86(3-4), 2000, pp. 323-332

Authors: Wellmann, PJ Bickermann, M Hofmann, D Kadinski, L Selder, M Straubinger, TL Winnacker, A
Citation: Pj. Wellmann et al., In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging, J CRYST GR, 216(1-4), 2000, pp. 263-272

Authors: Stoessel, M Wittmann, G Staudigel, J Steuber, F Blassing, J Roth, W Klausmann, H Rogler, W Simmerer, J Winnacker, A Inbasekaran, M Woo, EP
Citation: M. Stoessel et al., Cathode-induced luminescence quenching in polyfluorenes, J APPL PHYS, 87(9), 2000, pp. 4467-4475

Authors: Stossel, M Staudigel, J Steuber, F Blassing, J Simmerer, J Winnacker, A
Citation: M. Stossel et al., Space-charge-limited electron currents in 8-hydroxyquinoline aluminum, APPL PHYS L, 76(1), 2000, pp. 115-117

Authors: Stossel, M Staudigel, J Steuber, F Simmerer, J Wittmann, G Kanitz, A Klausmann, H Rogler, W Roth, W Schumann, J Winnacker, A
Citation: M. Stossel et al., Charge injection barrier modification in organic LEDs, PCCP PHYS C, 1(8), 1999, pp. 1791-1793

Authors: Stossel, M Staudigel, J Steuber, F Simmerer, J Winnacker, A
Citation: M. Stossel et al., Impact of the cathode metal work function on the performance of vacuum-deposited organic light emitting-devices, APPL PHYS A, 68(4), 1999, pp. 387-390

Authors: Hofmann, D Schmitt, E Bickermann, M Kolbl, M Wellmann, PJ Winnacker, A
Citation: D. Hofmann et al., Analysis on defect generation during the SiC bulk growth process, MAT SCI E B, 61-2, 1999, pp. 48-53

Authors: Hartung, W Rasp, M Hofmann, D Winnacker, A
Citation: W. Hartung et al., Analysis of electronic levels in SiC: V, N, Al powders and crystals using thermally stimulated luminescence, MAT SCI E B, 61-2, 1999, pp. 102-106

Authors: Ebling, DG Rattunde, M Steinke, L Benz, KW Winnacker, A
Citation: Dg. Ebling et al., MBE of AlN on SiC and influence of structural substrate defects on epitaxial growth, J CRYST GR, 202, 1999, pp. 411-414

Authors: Hofmann, D Bickermann, M Eckstein, R Kolbl, M Muller, SG Schmitt, E Weber, A Winnacker, A
Citation: D. Hofmann et al., Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation, J CRYST GR, 199, 1999, pp. 1005-1010

Authors: Steuber, F Staudigel, J Stossel, M Simmerer, J Winnacker, A
Citation: F. Steuber et al., Reduced operating voltage of organic electroluminescent devices by plasma treatment of the indium tin oxide anode, APPL PHYS L, 74(23), 1999, pp. 3558-3560
Risultati: 1-19 |