AAAAAA

   
Results: 1-10 |
Results: 10
Nonsilicide source/drain pixel for 0.25-mu m CMOS image sensor
Authors: Yaung, DN Wuu, SG Fang, YK Wang, CS Tseng, CH Liang, MS
Citation: Dn. Yaung et al., Nonsilicide source/drain pixel for 0.25-mu m CMOS image sensor, IEEE ELEC D, 22(2), 2001, pp. 71-73
To suppress photoexcited current of hydrogenated polysilicon TFTs with lowtemperature oxidation of polychannel
Authors: Yaung, DN Fang, YK Chen, CH Hung, CC Tsao, FC Wuu, SG Liang, MS
Citation: Dn. Yaung et al., To suppress photoexcited current of hydrogenated polysilicon TFTs with lowtemperature oxidation of polychannel, IEEE ELEC D, 22(1), 2001, pp. 23-25
Subthreshold characteristics of submicrometer polysilicon thin film transistor
Authors: Yaung, DN Fang, YK Huang, KC Wang, YJ Hung, CC Liang, MS Wuu, SG
Citation: Dn. Yaung et al., Subthreshold characteristics of submicrometer polysilicon thin film transistor, THIN SOL FI, 382(1-2), 2001, pp. 271-274
A novel double ion-implant (DII) Ti-salicide technology for high-performance sub-0.25-mu m CMOS devices applications
Authors: Thei, KB Liu, WC Chuang, HM Lin, KW Cheng, CC Ho, CH Su, CW Wuu, SG Wang, CS
Citation: Kb. Thei et al., A novel double ion-implant (DII) Ti-salicide technology for high-performance sub-0.25-mu m CMOS devices applications, IEEE DEVICE, 48(8), 2001, pp. 1740-1742
A comparison of behaviors between hydrogenated/unhydrogenated polysilicon thin film transistors under electric stress
Authors: Yaung, DN Fang, YK Lee, KY Hwang, KC Wuu, SG Liang, MS
Citation: Dn. Yaung et al., A comparison of behaviors between hydrogenated/unhydrogenated polysilicon thin film transistors under electric stress, JPN J A P 1, 39(7A), 2000, pp. 3896-3901
A new and improved borderless contact (BLC) structure for high-performanceTi-salicide in sub-quarter micron CMOS devices
Authors: Liu, WC Thei, KB Wang, WC Pan, HJ Wuu, SG Lei, MT Wang, CS Cheng, SY
Citation: Wc. Liu et al., A new and improved borderless contact (BLC) structure for high-performanceTi-salicide in sub-quarter micron CMOS devices, IEEE ELEC D, 21(7), 2000, pp. 344-346
Mechanism of device instability for unhydrogenated polysilicon TFTs under off-state stress
Authors: Yaung, DN Fang, YK Huang, KC Chen, CY Wang, YJ Hung, CC Wuu, SG Liang, MS
Citation: Dn. Yaung et al., Mechanism of device instability for unhydrogenated polysilicon TFTs under off-state stress, SEMIC SCI T, 15(9), 2000, pp. 888-891
The punchthrough phenomena in submicron polysilicon thin-film transistors
Authors: Yaung, DN Fang, YK Huang, KC Wang, YJ Hung, CC Liang, MS Wuu, SG
Citation: Dn. Yaung et al., The punchthrough phenomena in submicron polysilicon thin-film transistors, SEMIC SCI T, 15(2), 2000, pp. 225-228
High performance submicron bottom gate TFTs with self aligned Ti-silicide interpoly contact and poly-channel oxidation for high-density SRAM
Authors: Yaung, DN Fang, YK Huang, KC Chen, CY Wang, YJ Hung, CC Wuu, SG Liang, MS
Citation: Dn. Yaung et al., High performance submicron bottom gate TFTs with self aligned Ti-silicide interpoly contact and poly-channel oxidation for high-density SRAM, SOL ST ELEC, 44(11), 2000, pp. 1997-2000
Thin nitride-capped poly-resistor for high density and high performance SRAM with self-aligned-contact
Authors: Yaung, DN Fang, YK Huang, KC Wuu, SG Wang, CS Liang, MS
Citation: Dn. Yaung et al., Thin nitride-capped poly-resistor for high density and high performance SRAM with self-aligned-contact, ELECTR LETT, 35(24), 1999, pp. 2148-2149
Risultati: 1-10 |