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Results: 1-11 |
Results: 11
Development of a KBS for managing bank loan risk
Authors: Yang, BA Li, LX Xie, QH Xu, J
Citation: Ba. Yang et al., Development of a KBS for managing bank loan risk, KNOWL-BAS S, 14(5-6), 2001, pp. 299-302
Cooperative nucleation and evolution in InGaAs quantum dots in multiply stacked structures
Authors: Xie, QH Brown, JL Van Nostrand, JE
Citation: Qh. Xie et al., Cooperative nucleation and evolution in InGaAs quantum dots in multiply stacked structures, APPL PHYS L, 78(17), 2001, pp. 2491-2493
Charge accumulation of quantum dots at room temperature
Authors: Stutz, CE Xie, QH Jones, RL Brown, JL
Citation: Ce. Stutz et al., Charge accumulation of quantum dots at room temperature, J ELEC MAT, 29(11), 2000, pp. L29-L31
Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygenin n-type GaN thin solid films grown by gas-source molecular beam epitaxy
Authors: Van Nostrand, JE Solomon, J Saxler, A Xie, QH Reynolds, DC Look, DC
Citation: Je. Van Nostrand et al., Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygenin n-type GaN thin solid films grown by gas-source molecular beam epitaxy, J APPL PHYS, 87(12), 2000, pp. 8766-8772
Growth of vertically self-organized InGaAs quantum dots with narrow inhomogeneous broadening
Authors: Xie, QH Brown, JL Jones, RL Van Nostrand, JE Leedy, KD
Citation: Qh. Xie et al., Growth of vertically self-organized InGaAs quantum dots with narrow inhomogeneous broadening, APPL PHYS L, 76(21), 2000, pp. 3082-3084
Line-of-sight mass spectrometric study of As/Sb exchange on Sb-terminated and Ga-terminated GaSb (001) during molecular beam epitaxy
Authors: Xie, QH Van Nostrand, JE
Citation: Qh. Xie et Je. Van Nostrand, Line-of-sight mass spectrometric study of As/Sb exchange on Sb-terminated and Ga-terminated GaSb (001) during molecular beam epitaxy, J VAC SCI A, 17(2), 1999, pp. 342-346
Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy
Authors: Fang, ZQ Xie, QH Look, DC Ehret, J Van Nostrand, JE
Citation: Zq. Fang et al., Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy, J ELEC MAT, 28(8), 1999, pp. L13-L16
Shape stabilization and size equalization of InGaAs self-organized quantumdots
Authors: Xie, QH Brown, JL Jones, RL Van Nostrand, JE
Citation: Qh. Xie et al., Shape stabilization and size equalization of InGaAs self-organized quantumdots, J ELEC MAT, 28(12), 1999, pp. L42-L45
Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb-1 and Sb-2
Authors: Xie, QH Van Nostrand, JE Jones, RL Sizelove, J Look, DC
Citation: Qh. Xie et al., Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb-1 and Sb-2, J CRYST GR, 207(4), 1999, pp. 255-265
Cathodoluminescence, microstructure, and morphology of tensile-strained AlxGa(1-x)N epitaxial films grown by gas source molecular beam epitaxy
Authors: Van Nostrand, JE Hengehold, RL Leedy, KD Grant, JT Brown, JL Xie, QH
Citation: Je. Van Nostrand et al., Cathodoluminescence, microstructure, and morphology of tensile-strained AlxGa(1-x)N epitaxial films grown by gas source molecular beam epitaxy, J APPL PHYS, 86(6), 1999, pp. 3120-3128
Arsenic for antimony exchange on GaSb, its impacts on surface morphology, and interface structure
Authors: Xie, QH Van Nostrand, JE Brown, JL Stutz, CE
Citation: Qh. Xie et al., Arsenic for antimony exchange on GaSb, its impacts on surface morphology, and interface structure, J APPL PHYS, 86(1), 1999, pp. 329-337
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