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Results: 1-22 |
Results: 22

Authors: Xue, QZ Xue, QK Kuwano, S Nakayama, K Sakurai, T
Citation: Qz. Xue et al., N-plasma assisted molecular beam epitaxy of GaN(000(1)over-bar) thin filmson 6H-SiC(000(1)over-bar), JPN J A P 1, 40(6B), 2001, pp. 4388-4390

Authors: Xue, QZ Xue, QK Kuwano, S Nakayama, K Sakurai, T
Citation: Qz. Xue et al., Growth mode and surface reconstruction of GaN(000(1)over-bar) thin films on 6H-SiC(000(1)over-bar), CHIN PHYS, 10, 2001, pp. S157-S162

Authors: Lu, H Shen, DH Deng, XF Xue, QK Froumin, N Polak, M
Citation: H. Lu et al., Study of the Al/graphite interface, CHIN PHYS, 10(9), 2001, pp. 832-835

Authors: Lu, H Shen, DH Xue, QK Polak, M Froumin, N
Citation: H. Lu et al., X-ray photoelectron spectroscopy study of the metal/cermet interface, CHIN PHYS L, 18(1), 2001, pp. 94-96

Authors: Bakhtizin, RZ Xue, QZ Xue, QK Hasegawa, Y Tsong, IST Sakurai, T
Citation: Rz. Bakhtizin et al., STM study of controlling heteroepitaxial growth of nitride semiconductor films on an atomic scale, PHYS LOW-D, 3-4, 2001, pp. 243-256

Authors: Xue, QK Xue, QZ Kuwano, S Nakayama, K Sakurai, T Tsong, IST Qiu, XG Segawa, Y
Citation: Qk. Xue et al., Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC, J CRYST GR, 229(1), 2001, pp. 41-47

Authors: Li, JL Liang, XJ Jia, JF Liu, X Wang, JZ Wang, EG Xue, QK
Citation: Jl. Li et al., Spontaneous formation of ordered indium nanowire array on Si(001), APPL PHYS L, 79(17), 2001, pp. 2826-2828

Authors: Yamanaka, T Xue, QK Kimura, K Matsushima, T Hasegawa, Y Sakurai, T
Citation: T. Yamanaka et al., Observation of clean and oxygen-adsorbed Pt(113) surfaces by scanning tunneling microscopy, JPN J A P 1, 39(6A), 2000, pp. 3562-3565

Authors: Xue, QK Hashizume, T Sakurai, T
Citation: Qk. Xue et al., Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces, ADV MATERIA, 2000, pp. 193-282

Authors: Bakhtizin, RZ Hasegawa, Y Xue, QK Sakurai, T
Citation: Rz. Bakhtizin et al., Atomic structures of two-dimensional strained InAs epitaxial layers on a GaAs(001) surface: in situ observation of quantum dot growth, J EXP TH PH, 91(5), 2000, pp. 1000-1010

Authors: Xue, QK Li, JL Sun, M Lu, H Hashizume, T Hasegawa, Y Ohno, K Li, ZQ Kawazoe, Y Sakurai, T Kamiyama, H Shinohara, H
Citation: Qk. Xue et al., Coulomb expansion of a van der Waals C-60 solid film, SCI CHINA A, 43(11), 2000, pp. 1224-1232

Authors: Xue, QK Xue, QZ Kuwano, S Sakurai, T Ohno, T Tsong, IST Qiu, XG Segawa, Y
Citation: Qk. Xue et al., Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunnelingmicroscopy, THIN SOL FI, 367(1-2), 2000, pp. 149-158

Authors: Xue, QZ Xue, QK Kuwano, S Sadowski, JT Kelly, KF Sakurai, T Ohno, T
Citation: Qz. Xue et al., Comment on "Structures of GaN(0001)-(2x2), -(4x4), and -(5x5) surface reconstructions" - Reply, PHYS REV L, 84(17), 2000, pp. 4015-4015

Authors: Qiu, XG Segawa, Y Xue, QK Xue, QZ Sakurai, T
Citation: Xg. Qiu et al., Influence of threading dislocations on the near-bandedge photoluminescenceof wurtzite GaN thin films on SiC substrate, APPL PHYS L, 77(9), 2000, pp. 1316-1318

Authors: Xue, QK Hasegawa, Y Kiyama, H Sakurai, T
Citation: Qk. Xue et al., Atomic structure of faceted planes of InAs quantum dots on GaAs(001) studied by scanning tunneling microscopy, JPN J A P 1, 38(1B), 1999, pp. 500-503

Authors: Mantese, L Xue, QK Sakurai, T Aspnes, DE
Citation: L. Mantese et al., Analysis of high-index Si(001) surfaces by reflectance difference spectroscopy, J VAC SCI A, 17(4), 1999, pp. 1652-1656

Authors: Gai, Z Yang, WS Xue, QK Sakurai, T Zhao, RG
Citation: Z. Gai et al., Scanning tunneling microscopy investigation of the Si(103)-(1 x 1)-in surface, SURF REV L, 6(3-4), 1999, pp. 405-409

Authors: Xue, QK Hashizume, T Sakurai, T
Citation: Qk. Xue et al., Scanning tunneling microscopy study of GaAs(001) surfaces, APPL SURF S, 141(3-4), 1999, pp. 244-263

Authors: Xue, Q Xue, QK Bakhtizin, RZ Hasegawa, Y Tsong, IST Sakurai, T Ohno, T
Citation: Q. Xue et al., Atomistic investigation of various GaN (0001) phases on the 6H-SiC (0001) surface, PHYS REV B, 59(19), 1999, pp. 12604-12611

Authors: Xue, QK Xue, QZ Bakhtizin, RZ Hasegawa, Y Tsong, IST Sakurai, T Ohno, T
Citation: Qk. Xue et al., Structures of GaN(0001)-(2x2), -(4x4), and -(5x5) surface reconstructions, PHYS REV L, 82(15), 1999, pp. 3074-3077

Authors: Hasegawa, Y Akiyama, K Ono, M Kahng, SJ Xue, QK Nakayama, K Hashizume, T Sakurai, T
Citation: Y. Hasegawa et al., Erasable nanometer-scale modification at the Au/Si interface by ballistic electron emission microscopy, APPL PHYS L, 75(23), 1999, pp. 3668-3670

Authors: Xue, QZ Xue, QK Hasegawa, Y Tsong, IST Sakurai, T
Citation: Qz. Xue et al., Two-step preparation of 6H-SiC(0001) surface for epitaxial growth of GaN thin film, APPL PHYS L, 74(17), 1999, pp. 2468-2470
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