Authors:
Xue, QZ
Xue, QK
Kuwano, S
Nakayama, K
Sakurai, T
Citation: Qz. Xue et al., N-plasma assisted molecular beam epitaxy of GaN(000(1)over-bar) thin filmson 6H-SiC(000(1)over-bar), JPN J A P 1, 40(6B), 2001, pp. 4388-4390
Authors:
Xue, QZ
Xue, QK
Kuwano, S
Nakayama, K
Sakurai, T
Citation: Qz. Xue et al., Growth mode and surface reconstruction of GaN(000(1)over-bar) thin films on 6H-SiC(000(1)over-bar), CHIN PHYS, 10, 2001, pp. S157-S162
Authors:
Bakhtizin, RZ
Xue, QZ
Xue, QK
Hasegawa, Y
Tsong, IST
Sakurai, T
Citation: Rz. Bakhtizin et al., STM study of controlling heteroepitaxial growth of nitride semiconductor films on an atomic scale, PHYS LOW-D, 3-4, 2001, pp. 243-256
Authors:
Yamanaka, T
Xue, QK
Kimura, K
Matsushima, T
Hasegawa, Y
Sakurai, T
Citation: T. Yamanaka et al., Observation of clean and oxygen-adsorbed Pt(113) surfaces by scanning tunneling microscopy, JPN J A P 1, 39(6A), 2000, pp. 3562-3565
Authors:
Bakhtizin, RZ
Hasegawa, Y
Xue, QK
Sakurai, T
Citation: Rz. Bakhtizin et al., Atomic structures of two-dimensional strained InAs epitaxial layers on a GaAs(001) surface: in situ observation of quantum dot growth, J EXP TH PH, 91(5), 2000, pp. 1000-1010
Authors:
Xue, QK
Xue, QZ
Kuwano, S
Sakurai, T
Ohno, T
Tsong, IST
Qiu, XG
Segawa, Y
Citation: Qk. Xue et al., Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunnelingmicroscopy, THIN SOL FI, 367(1-2), 2000, pp. 149-158
Authors:
Xue, QZ
Xue, QK
Kuwano, S
Sadowski, JT
Kelly, KF
Sakurai, T
Ohno, T
Citation: Qz. Xue et al., Comment on "Structures of GaN(0001)-(2x2), -(4x4), and -(5x5) surface reconstructions" - Reply, PHYS REV L, 84(17), 2000, pp. 4015-4015
Authors:
Qiu, XG
Segawa, Y
Xue, QK
Xue, QZ
Sakurai, T
Citation: Xg. Qiu et al., Influence of threading dislocations on the near-bandedge photoluminescenceof wurtzite GaN thin films on SiC substrate, APPL PHYS L, 77(9), 2000, pp. 1316-1318
Citation: Qk. Xue et al., Atomic structure of faceted planes of InAs quantum dots on GaAs(001) studied by scanning tunneling microscopy, JPN J A P 1, 38(1B), 1999, pp. 500-503
Authors:
Hasegawa, Y
Akiyama, K
Ono, M
Kahng, SJ
Xue, QK
Nakayama, K
Hashizume, T
Sakurai, T
Citation: Y. Hasegawa et al., Erasable nanometer-scale modification at the Au/Si interface by ballistic electron emission microscopy, APPL PHYS L, 75(23), 1999, pp. 3668-3670