Authors:
LEE KY
FANG YK
CHEN CW
YAUNG DN
WUU KH
HO JJ
LIANG MS
WUU SG
Citation: Ky. Lee et al., THE IMPACTS OF BACK-END HIGH-TEMPERATURE THERMAL TREATMENTS ON THE CHARACTERISTICS AND GATE OXIDE RELIABILITY OF THIN-FILM-TRANSISTOR IN ULTRA LARGE-SCALE INTEGRATED-CIRCUIT PROCESS, JPN J A P 1, 36(5A), 1997, pp. 2628-2632
Citation: Jd. Hwang et al., HIGH-MOBILITY BETA-SIC EPILAYER PREPARED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION ON A (100)SILICON SUBSTRATE, Thin solid films, 272(1), 1996, pp. 4-6
Citation: Jd. Hwang et al., EPITAXIAL-GROWTH AND ELECTRICAL CHARACTERISTICS OF BETA-SIC ON SI BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 34(3), 1995, pp. 1447-1450