Authors:
CHANG KM
LI CH
SHEIH BS
YANG JY
WANG SW
YEH TH
Citation: Km. Chang et al., A NEW SIMPLE AND RELIABLE METHOD TO FORM A TEXTURED SI SURFACE FOR THE FABRICATION OF A TUNNEL OXIDE FILM, IEEE electron device letters, 19(5), 1998, pp. 145-147
Authors:
YEH TH
HERMAN P
TSAI MC
HUY PTB
VANDENABBEELE T
Citation: Th. Yeh et al., A CATIONIC NONSELECTIVE STRETCH-ACTIVATED CHANNEL IN THE REISSNERS MEMBRANE OF THE GUINEA-PIG COCHLEA, American journal of physiology. Cell physiology, 43(3), 1998, pp. 566-576
Authors:
CHANG KM
LI CH
WANG SW
YEH TH
YANG JY
LEE TC
Citation: Km. Chang et al., THE RELAXATION PHENOMENA OF POSITIVE CHARGES IN THIN GATE OXIDE DURING FOWLER-NORDHEIM TUNNELING STRESS, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1684-1689
Citation: Km. Chang et al., SUPPRESSION OF FLUORINE IMPURITY IN BLANKET CHEMICAL-VAPOR-DEPOSITED TUNGSTEN FILM FOR VIA FILLS WITH A NOVEL 2-STEP DEPOSITION TECHNIQUE, JPN J A P 1, 36(4A), 1997, pp. 2061-2067
Citation: Wh. Chen et al., CHARACTERIZATION OF CA2-DEPENDENT AND VOLTAGE-DEPENDENT NONSELECTIVE CATION CHANNELS IN HUMAN HEPG2 CELLS(), Journal of the Formosan Medical Association, 96(7), 1997, pp. 503-510
Citation: Th. Yeh et al., STRETCH-ACTIVATED NONSELECTIVE CATION, CL- AND K-CELLS OF REISSNERS MEMBRANE( CHANNELS IN APICAL MEMBRANE OF EPITHELIAL), Hearing research, 109(1-2), 1997, pp. 1-10
Citation: Km. Chang et al., AMORPHOUS-LIKE CHEMICAL-VAPOR-DEPOSITED TUNGSTEN DIFFUSION BARRIER FOR COPPER METALLIZATION AND EFFECTS OF NITROGEN ADDITION, Journal of applied physics, 82(3), 1997, pp. 1469-1475
Citation: Km. Chang et al., NITRIDATION OF FINE-GRAIN CHEMICAL-VAPOR-DEPOSITED TUNGSTEN FILM AS DIFFUSION BARRIER FOR ALUMINUM METALLIZATION, Journal of applied physics, 81(8), 1997, pp. 3670-3676
Authors:
CHANG KM
YEH TH
WANG SW
LI CH
TSAI JY
YANG JY
Citation: Km. Chang et al., INTERFACE CHARACTERISTICS OF SELECTIVE TUNGSTEN ON SILICON USING A NEW PRETREATMENT TECHNOLOGY FOR ULSI APPLICATION, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 738-743
Citation: Km. Chang et al., LEAKAGE PERFORMANCE AND BREAKDOWN MECHANISM OF SILICON-RICH OXIDE ANDFLUORINATED OXIDE PREPARED BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 144(5), 1997, pp. 1754-1759
Citation: Km. Chang et al., SIH4-WF6 GAS-PHASE NUCLEATED TUNGSTEN AS AN ADHESION LAYER IN BLANKETCHEMICAL-VAPOR-DEPOSITION FOR ULTRALARGE SCALE INTEGRATION, Journal of the Electrochemical Society, 144(3), 1997, pp. 996-1001
Citation: Km. Chang et al., CHARACTERISTICS OF SELECTIVE CHEMICAL-VAPOR-DEPOSITION OF TUNGSTEN ONALUMINUM WITH A VAPOR-PHASE PRECLEANING TECHNOLOGY, Journal of the Electrochemical Society, 144(1), 1997, pp. 251-259
Authors:
CHANG KM
LI CH
FAHN FJ
TSAI JY
YEH TH
WANG SW
YANG JY
Citation: Km. Chang et al., THE INFLUENCE OF PRECLEANING PROCESS ON THE GATE OXIDE FILM FABRICATED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA OXIDATION, Journal of the Electrochemical Society, 144(1), 1997, pp. 311-314
Citation: Km. Chang et al., EFFECT OF ADDING AR ON THE THERMAL-STABILITY OF CHEMICAL-VAPOR-DEPOSITED FLUORINATED SILICON-OXIDE USING AN INDIRECT FLUORINATING PRECURSOR, Applied physics letters, 70(19), 1997, pp. 2556-2558
Citation: Sy. Lee et al., MUCOCILIARY CLEARANCE OF STENTED LARYNGOTRACHEAL TRACT IN GUINEA-PIGSIN-VIVO, The Annals of otology, rhinology & laryngology, 106(3), 1997, pp. 240-243
Citation: Km. Chang et al., COMPREHENSIVE STUDY OF PLASMA PRETREATMENT PROCESS FOR THIN GATE OXIDE (LESS-THAN-10 NM) FABRICATED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA OXIDATION, JPN J A P 1, 35(12B), 1996, pp. 6549-6554
Citation: Km. Chang et al., REDUCTION OF SELECTIVITY LOSS PROBABILITY ON DIELECTRIC SURFACE DURING CHEMICAL-VAPOR-DEPOSITION OF TUNGSTEN USING FLUORINATED OXIDE AND REMOVING SILANOL UNITS ON DIELECTRIC SURFACE, JPN J A P 1, 35(12B), 1996, pp. 6555-6561
Citation: Km. Chang et al., DRY-ETCHING OF POLYSILICON WITH HIGH SELECTIVITY USING A CHLORINE-BASED PLASMA IN AN ECR REACTOR, Materials chemistry and physics, 45(1), 1996, pp. 22-26
Authors:
KOH S
YEH TH
MORRIS S
LEFFLER M
HIGGINBOTHAM E
BRENNEMAN D
YUE B
Citation: S. Koh et al., EFFECTS OF VIP ON TRABECULAR MESHWORK CELLS FOLLOWING TRABECULOPLASTYOF HUMAN CORNEOSCLERAL EXPLANTS, Investigative ophthalmology & visual science, 37(3), 1996, pp. 3785-3785
Citation: Km. Chang et al., HIGHLY SELECTIVE ETCHING FOR POLYSILICON AND ETCH-INDUCED DAMAGE TO GATE OXIDE WITH HALOGEN-BEARING ELECTRON-CYCLOTRON-RESONANCE PLASMA, Journal of applied physics, 80(5), 1996, pp. 3048-3055
Citation: Km. Chang et al., INFLUENCES OF DAMAGE AND CONTAMINATION FROM REACTIVE ION ETCHING ON SELECTIVE TUNGSTEN DEPOSITION IN A LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR, Journal of applied physics, 80(5), 1996, pp. 3056-3061
Authors:
CHANG KM
TSAI JY
LI CH
YEH TH
WANG SW
YANG JY
Citation: Km. Chang et al., EFFECTS OF GAS RATIO ON ELECTRICAL-PROPERTIES OF ELECTRON-CYCLOTRON-RESONANCE NITRIDE FILMS GROWN AT ROOM-TEMPERATURE, Journal of applied physics, 79(11), 1996, pp. 8503-8506