Authors: YIH CM WANG CL CHUNG SS WU CC TAN W WU HJ PI S HUANG D

Citation: Cm. Yih et al., NEW INSIGHT INTO THE DEGRADATION MECHANISM OF NITRIDE SPACER WITH DIFFERENT POST-OXIDE IN SUBMICRON LDD N-MOSFETS, JPN J A P 1, 37(3B), 1998, pp. 1035-1040

Authors: YIH CM CHENG SM CHUNG SS

Citation: Cm. Yih et al., A NEW APPROACH TO SIMULATING N-MOSFET GATE CURRENT DEGRADATION BY INCLUDING HOT-ELECTRON-INDUCED OXIDE DAMAGE, I.E.E.E. transactions on electron devices, 45(11), 1998, pp. 2343-2348

Authors: CHENG SM YIH CM YEH JC KUO SN CHUNG SS

Citation: Sm. Cheng et al., A UNIFIED APPROACH TO PROFILING THE LATERAL DISTRIBUTIONS OF BOTH OXIDE CHARGE AND INTERFACE STATES IN N-MOSFETS UNDER VARIOUS BIAS STRESS CONDITIONS, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 1908-1914