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Results: 1-7 |
Results: 7
STATISTICAL ENHANCEMENT OF TERMINAL CURRENT ESTIMATION FOR MONTE-CARLO DEVICE SIMULATION
Authors: YODER PD KRUMBEIN U GARTNER K SASAKI N FICHTNER W
Citation: Pd. Yoder et al., STATISTICAL ENHANCEMENT OF TERMINAL CURRENT ESTIMATION FOR MONTE-CARLO DEVICE SIMULATION, VLSI design (Print), 6(1-4), 1998, pp. 303-306
OPTIMIZED TERMINAL CURRENT CALCULATION FOR MONTE-CARLO DEVICE SIMULATION
Authors: YODER PD GARTNER K KRUMBEIN U FICHTNER W
Citation: Pd. Yoder et al., OPTIMIZED TERMINAL CURRENT CALCULATION FOR MONTE-CARLO DEVICE SIMULATION, IEEE transactions on computer-aided design of integrated circuits and systems, 16(10), 1997, pp. 1082-1087
A GENERALIZED RAMO-SHOCKLEY THEOREM FOR CLASSICAL TO QUANTUM TRANSPORT AT ARBITRARY FREQUENCIES
Authors: YODER PD GARTNER K FICHTNER W
Citation: Pd. Yoder et al., A GENERALIZED RAMO-SHOCKLEY THEOREM FOR CLASSICAL TO QUANTUM TRANSPORT AT ARBITRARY FREQUENCIES, Journal of applied physics, 79(4), 1996, pp. 1951-1954
1ST-PRINCIPLES MONTE-CARLO SIMULATION OF TRANSPORT IN SI
Authors: YODER PD HESS K
Citation: Pd. Yoder et K. Hess, 1ST-PRINCIPLES MONTE-CARLO SIMULATION OF TRANSPORT IN SI, Semiconductor science and technology, 9(5), 1994, pp. 852-854
A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON
Authors: ABRAMO A BAUDRY L BRUNETTI R CASTAGNE R CHAREF M DESSENNE F DOLLFUS P DUTTON R ENGL WL FAUQUEMBERGUE R FIEGNA C FISCHETTI MV GALDIN S GOLDSMAN N HACKEL M HAMAGUCHI C HESS K HENNACY K HESTO P HIGMAN JM IIZUKA T JUNGEMANN C KAMAKURA Y KOSINA H KUNIKIYO T LAUX SE LIM HC MAZIAR C MIZUNO H PEIFER HJ RAMASWAMY S SANO N SCORBOHACI PG SELBERHERR S TAKENAKA M TANG TW TANIGUCHI K THOBEL JL THOMA R TOMIZAWA K TOMIPZAWA M VOGELSANG T WANG SL WANG XL YAO CS YODER PD YOSHII A
Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654
ABINITIO ANALYSIS OF THE ELECTRON-PHONON INTERACTION IN SILICON
Authors: YODER PD NATOLI VD MARTIN RM
Citation: Pd. Yoder et al., ABINITIO ANALYSIS OF THE ELECTRON-PHONON INTERACTION IN SILICON, Journal of applied physics, 73(9), 1993, pp. 4378-4383
MONTE-CARLO SIMULATION OF HOT-ELECTRON TRANSPORT IN SI USING A UNIFIED PSEUDOPOTENTIAL DESCRIPTION OF THE CRYSTAL
Authors: YODER PD HIGMAN JM BUDE J HESS K
Citation: Pd. Yoder et al., MONTE-CARLO SIMULATION OF HOT-ELECTRON TRANSPORT IN SI USING A UNIFIED PSEUDOPOTENTIAL DESCRIPTION OF THE CRYSTAL, Semiconductor science and technology, 7(3B), 1992, pp. 357-359
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