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Results: 1-10 |
Results: 10
LOW-TEMPERATURE FORMATION OF PEROVSKITE PBTIO3 FILMS BY O-2 CLUSTER ION-ASSISTED DEPOSITION
Authors: AKIZUKI M MATSUO J QIN W AOKI T HARADA M OGASAWARA S YODOSHI K YAMADA I
Citation: M. Akizuki et al., LOW-TEMPERATURE FORMATION OF PEROVSKITE PBTIO3 FILMS BY O-2 CLUSTER ION-ASSISTED DEPOSITION, Materials chemistry and physics, 54(1-3), 1998, pp. 255-257
IMPROVEMENT OF THE SPIN-ON-GLASS PROCESS BY ION-IMPLANTATION FOR HIGHLY RELIABLE MOS DEVICES
Authors: MIZUHARA H WATANABE H MISAWA K ARIMOTO M AKIZUKI M AOE H MAMENO K HANAFUSA H YODOSHI K
Citation: H. Mizuhara et al., IMPROVEMENT OF THE SPIN-ON-GLASS PROCESS BY ION-IMPLANTATION FOR HIGHLY RELIABLE MOS DEVICES, Applied surface science, 114, 1997, pp. 675-679
INFLUENCE OF RAPID THERMAL ANNEALING ON MODULATION-DOPED STRUCTURES
Authors: INOUE D MATSUSHITA S MATSUMURA K SAWADA M YODOSHI K HARADA Y
Citation: D. Inoue et al., INFLUENCE OF RAPID THERMAL ANNEALING ON MODULATION-DOPED STRUCTURES, Solid-state electronics, 41(10), 1997, pp. 1475-1479
P-TYPE CONDUCTING ZNSE AND ZNSSE BY N-2 GAS-DOPING DURING MOLECULAR-BEAM-EPITAXY
Authors: HISHIDA Y YOSHIE T YAGI K YODOSHI K NIINA T
Citation: Y. Hishida et al., P-TYPE CONDUCTING ZNSE AND ZNSSE BY N-2 GAS-DOPING DURING MOLECULAR-BEAM-EPITAXY, JPN J A P 1, 35(2B), 1996, pp. 1415-1419
SELF-PULSATING 630NM BAND STRAIN-COMPENSATED MQW ALGAINP LASER-DIODES
Authors: BESSHO Y UETANI T HIROYAMA R KOMEDA K SHONO M IBARAKI A YODOSHI K NIINA T
Citation: Y. Bessho et al., SELF-PULSATING 630NM BAND STRAIN-COMPENSATED MQW ALGAINP LASER-DIODES, Electronics Letters, 32(7), 1996, pp. 667-668
MOLECULAR-BEAM EPITAXY OF P-TYPE CONDUCTING ZNSE AND ZNSSE BY SIMPLE NITROGEN GAS DOPING WITHOUT PLASMA ACTIVATION
Authors: HISHIDA Y YOSHIE T YAGI K YODOSHI K NIINA T
Citation: Y. Hishida et al., MOLECULAR-BEAM EPITAXY OF P-TYPE CONDUCTING ZNSE AND ZNSSE BY SIMPLE NITROGEN GAS DOPING WITHOUT PLASMA ACTIVATION, Applied physics letters, 67(2), 1995, pp. 270-272
ALGAINP STRAINED MULTIPLE-QUANTUM-WELL VISIBLE LASER-DIODES (LAMBDA(L)LESS-THAN-OR-EQUAL-TO-630-NM-BAND) WITH A MULTIQUANTUM BARRIER GROWN ON MISORIENTED SUBSTRATES
Authors: HAMADA H HIROYAMA R HONDA S SHONO M YODOSHI K YAMAGUCHI T
Citation: H. Hamada et al., ALGAINP STRAINED MULTIPLE-QUANTUM-WELL VISIBLE LASER-DIODES (LAMBDA(L)LESS-THAN-OR-EQUAL-TO-630-NM-BAND) WITH A MULTIQUANTUM BARRIER GROWN ON MISORIENTED SUBSTRATES, IEEE journal of quantum electronics, 29(6), 1993, pp. 1844-1850
HIGHLY RELIABLE 200 MW ALGAAS LASER-DIODE WITH FUNDAMENTAL TRANSVERSE-MODE
Authors: TAJIRI A MINAKUCHI K KOMEDA K BESSHO Y INOUE Y YODOSHI K YAMAGUCHI T
Citation: A. Tajiri et al., HIGHLY RELIABLE 200 MW ALGAAS LASER-DIODE WITH FUNDAMENTAL TRANSVERSE-MODE, Electronics Letters, 29(4), 1993, pp. 369-370
HIGH-POWER OPERATION OF 630 NM-BAND TENSILE-STRAINED MULTI-QUANTUM-WELL ALGAINP LASER-DIODES WITH A MULTIQUANTUM BARRIER
Authors: SHONO M HONDA S IKEGAMI T BESSYO Y HIROYAMA R KASE H YODOSHI K YAMAGUCHI T NIINA T
Citation: M. Shono et al., HIGH-POWER OPERATION OF 630 NM-BAND TENSILE-STRAINED MULTI-QUANTUM-WELL ALGAINP LASER-DIODES WITH A MULTIQUANTUM BARRIER, Electronics Letters, 29(11), 1993, pp. 1010-1011
HIGH-POWER, 790NM, 8-BEAM ALGAAS LASER ARRAY WITH A MONITORING PHOTODIODE
Authors: MINAKUCHI K BESSHO Y INOUE Y KOMEDA K TABUCHI N TOMINAGA K TAJIRI A YODOSHI K YAMAGUCHI T
Citation: K. Minakuchi et al., HIGH-POWER, 790NM, 8-BEAM ALGAAS LASER ARRAY WITH A MONITORING PHOTODIODE, JPN J A P 1, 31(2B), 1992, pp. 508-512
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