Authors: YOUNT JT LENAHAN PM WYATT PW

Citation: Jt. Yount et al., THE EFFECTS OF THERMAL NITRIDATION AND REOXIDATION ON THE INTERFACIALSTRESS AND STRUCTURE OF SILICON DIOXIDE GATE DIELECTRICS, Journal of applied physics, 77(2), 1995, pp. 699-705

Authors: YOUNT JT LENAHAN PM KRICK JT

Citation: Jt. Yount et al., COMPARISON OF DEFECT STRUCTURE IN N2O- AND NH3-NITRIDED OXIDE DIELECTRICS, Journal of applied physics, 76(3), 1994, pp. 1754-1758

Authors: SAKS NS SIMONS M FLEETWOOD DM YOUNT JT LENAHAN PM KLEIN RB

Citation: Ns. Saks et al., RADIATION EFFECTS IN OXYNITRIDES GROWN IN N2O, IEEE transactions on nuclear science, 41(6), 1994, pp. 1854-1863

Authors: YOUNT JT LENAHAN PM

Citation: Jt. Yount et Pm. Lenahan, BRIDGING NITROGEN DANGLING BOND CENTERS AND ELECTRON TRAPPING IN AMORPHOUS NH3-NITRIDED AND REOXIDIZED NITRIDED-OXIDE FILMS, Journal of non-crystalline solids, 166, 1993, pp. 1069-1072

Authors: YOUNT JT LENAHAN PM WYATT PW

Citation: Jt. Yount et al., AN ELECTRON-SPIN-RESONANCE STUDY OF THE EFFECTS OF THERMAL NITRIDATION AND REOXIDATION ON P(B) CENTERS AT (111) SI SIO2 INTERFACES/, Journal of applied physics, 74(9), 1993, pp. 5867-5870