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Results:
1-8
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Results: 8
Authors:
YOW HK
HOUSTON PA
BUTTON CC
DAVID JPR
NG CMS
Citation: Hk. Yow et al., EFFECTS OF HIGH-TEMPERATURE ANNEALING ON THE DEVICE CHARACTERISTICS OF GA0.52IN0.48P GAAS AND AL0.52IN0.48P/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of electronic materials, 27(1), 1998, pp. 17-23
Authors:
LYE BC
HOUSTON PA
YOW HK
BUTTON CC
Citation: Bc. Lye et al., GAINP ALGAAS/GAINP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH ZERO CONDUCTION-BAND SPIKE AT THE COLLECTOR/, I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2417-2421
Authors:
NG CMS
HOUSTON PA
YOW HK
Citation: Cms. Ng et al., ANALYSIS OF THE TEMPERATURE-DEPENDENCE OF CURRENT GAIN IN HETEROJUNCTION BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 17-24
Authors:
YOW HK
HOUSTON PA
NG CMS
BUTTON C
ROBERTS JS
Citation: Hk. Yow et al., HIGH-TEMPERATURE DC CHARACTERISTICS OF ALXGA0.52-XIN0.48P GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY/, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 2-7
Authors:
LYE BC
YOW HK
HOUSTON PA
BUTTON CC
Citation: Bc. Lye et al., ELECTRON-MOBILITY ENHANCEMENT IN HEAVILY-DOPED GAAS-C HETEROJUNCTION BIPOLAR-TRANSISTORS, Electronics Letters, 32(25), 1996, pp. 2351-2352
Authors:
YOW HK
HOUSTON PA
HOPKINSON M
Citation: Hk. Yow et al., CONDUCTION-BAND DISCONTINUITIES IN GA0.5IN0.5P-ALXGA0.5-XIN0.5P HETEROJUNCTIONS MEASURED BY INTERNAL PHOTOEMISSION, Applied physics letters, 66(21), 1995, pp. 2852-2854
Authors:
YOW HK
HOUSTON PA
BUTTON CC
LEE TW
ROBERTS JS
Citation: Hk. Yow et al., HETEROJUNCTION BIPOLAR-TRANSISTORS IN ALGAINP GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of applied physics, 76(12), 1994, pp. 8135-8141
Authors:
YOW HK
LEE TW
HOUSTON PA
LEE HY
BUTTON CC
ROBERTS JS
Citation: Hk. Yow et al., DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS USING ALGAINP GAAS/GAINP/, Electronics Letters, 30(2), 1994, pp. 167-169
Risultati:
1-8
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