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Results:
1-13
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Results: 13
Authors:
Schineller, B
Protzmann, H
Luenenbuerger, M
Heuken, M
Lutsenko, EV
Yablonskii, GP
Citation: B. Schineller et al., Group-III nitride growth in production scale MOVPE systems, J PHYS IV, 11(PR3), 2001, pp. 1073-1077
Authors:
Yablonskii, GP
Lutsenko, EV
Pavlovskii, VN
Marko, IP
Schineller, B
Heuken, M
Heime, K
Citation: Gp. Yablonskii et al., Luminescence and lasing in GaN epitaxial layers and InGaN/GaN quantum wellheterostructures under optical and electron-beam excitation, MAT SCI E B, 80(1-3), 2001, pp. 322-326
Authors:
Marko, IP
Lutsenko, EV
Yablonskii, GP
Gurskii, AL
Kalisch, H
Heime, K
Heuken, M
Walther, T
Citation: Ip. Marko et al., Thermal stability of ZnMgSSe/ZnSe laser heterostructures, PHYS ST S-A, 185(2), 2001, pp. 301-308
Authors:
Yablonskii, GP
Lutsenko, EV
Pavlovskii, VN
Marko, IP
Gurskii, AL
Zubialevich, VZ
Mudryi, AV
Schon, O
Protzmann, H
Lunenburger, M
Schineller, B
Heuken, M
Kalisch, H
Heime, K
Citation: Gp. Yablonskii et al., Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emissionwavelength in the spectral range of 450-470 nm, APPL PHYS L, 79(13), 2001, pp. 1953-1955
Authors:
Gurskii, AL
Rakovich, YP
Lutsenko, EV
Gladyshchuk, AA
Yablonskii, GP
Hamadeh, H
Heuken, M
Citation: Al. Gurskii et al., Free-exciton spectra in heteroepitaxial ZnSe/GaAs layers, PHYS REV B, 61(15), 2000, pp. 10314-10321
Authors:
Gurskii, AL
Hamadeh, H
Korfer, H
Yablonskii, GP
Zelenkovskii, VM
Bezjazychnaja, TV
Heuken, M
Heime, K
Citation: Al. Gurskii et al., Reconstruction of excitonic spectrum during annealing of ZnSe : N grown bymetalorganic vapor phase epitaxy, J ELEC MAT, 29(4), 2000, pp. 430-435
Authors:
Schineller, B
Lim, PH
Yablonskii, GP
Lutsenko, EV
Schon, O
Protzmann, H
Heuken, M
Heime, K
Citation: B. Schineller et al., Characterization of undoped and silicon-doped InGaN/GaN single quantum wells, J ELEC MAT, 29(1), 2000, pp. 31-36
Authors:
Rakovich, Y
Bryja, L
Ciorga, M
Misiewicz, J
Heuken, M
Heime, K
Yablonskii, GP
Citation: Y. Rakovich et al., Effect of above band-gap illumination on structure of free exciton reflection spectra of ZnSe, THIN SOL FI, 364(1-2), 2000, pp. 287-290
Authors:
Yablonskii, GP
Lutsenko, EV
Marko, IP
Pavlovskii, VN
Mudryi, AV
Stognij, AI
Schon, O
Protzmann, H
Lunenburger, M
Schineller, B
Heuken, M
Heime, K
Citation: Gp. Yablonskii et al., Stimulated emission, electro- and photoluminescence of InGaN/GaN EL-test and SQW heterostructures grown by MOVPE, PHYS ST S-A, 180(1), 2000, pp. 149-155
Authors:
Walther, T
Kalisch, H
Heime, K
Heuken, M
Marko, I
Yablonskii, GP
Citation: T. Walther et al., A study of sulphur diffusion in ZnMgSSe/ZnSe quantum wells by energy-loss imaging in a transmission electron microscope, PHYS ST S-A, 180(1), 2000, pp. 351-356
Authors:
Marko, IP
Lutsenko, EV
Pavlovskii, VN
Yablonskii, GP
Schon, O
Protzmann, H
Lunenburger, M
Heuken, M
Schineller, B
Heime, K
Citation: Ip. Marko et al., Influence of UV light-assisted annealing on optical properties of InGaN/GaN heterostructures grown by MOVPE, PHYS ST S-B, 216(1), 1999, pp. 175-179
Authors:
Taylor, RA
Hess, S
Kyhm, K
Smith, J
Ryan, JF
Yablonskii, GP
Lutsenko, EV
Pavlovskii, VN
Heuken, M
Citation: Ra. Taylor et al., Stimulated emission and excitonic bleaching in GaN epilayers under high-density excitation, PHYS ST S-B, 216(1), 1999, pp. 465-470
Authors:
Marko, IP
Lutsenko, EV
Pavlovskii, VN
Yablonskii, GP
Schon, O
Protzmann, H
Lunenburger, M
Heuken, M
Schineller, B
Heime, K
Citation: Ip. Marko et al., High-temperature lasing in InGaN/GaN multiquantum well heterostructures, PHYS ST S-B, 216(1), 1999, pp. 491-494
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