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Results: 1-25/49
Authors:
Sung, YJ
Kim, HS
Lee, YH
Lee, JW
Chae, SH
Park, YJ
Yeom, GY
Citation: Yj. Sung et al., High rate etching of sapphire wafer using Cl-2/BCl3/Ar inductively coupledplasmas, MAT SCI E B, 82(1-3), 2001, pp. 50-52
Authors:
Kim, HS
Sung, YJ
Kim, DW
Kim, T
Dawson, MD
Yeom, GY
Citation: Hs. Kim et al., Etch end-point detection of GaN-based devices using optical emission spectroscopy, MAT SCI E B, 82(1-3), 2001, pp. 159-162
Authors:
Han, HR
Lee, YJ
Yeom, GY
Citation: Hr. Han et al., Investigation of the outgassing characteristics of the materials comprising a plasma display panel, J VAC SCI A, 19(4), 2001, pp. 1099-1104
Authors:
Kim, JS
Kim, GH
Chung, TH
Yeom, GY
Kwon, KH
Citation: Js. Kim et al., Characterization of an oxygen plasma by using a Langmuir probe in an inductively coupled plasma, J KOR PHYS, 38(3), 2001, pp. 259-263
Authors:
Lee, YH
Yi, CH
Chung, MJ
Yeom, GY
Citation: Yh. Lee et al., Characteristics of He/O-2 atmospheric pressure glow discharge and its dry etching properties of organic materials, SURF COAT, 146, 2001, pp. 474-479
Authors:
Oh, BH
Bae, JW
Kim, JH
Kim, KJ
Ahn, YS
Lee, NE
Yeom, GY
Yoon, SS
Chae, SK
Ku, MS
Lee, SG
Cho, DH
Citation: Bh. Oh et al., Effect of O-2(CO2)/C4F8O gas combinations on global warming gas emission in silicon nitride PECVD plasma cleaning, SURF COAT, 146, 2001, pp. 522-527
Authors:
Wang, SJ
Park, HH
Yeom, GY
Hyun, SH
Citation: Sj. Wang et al., The effects of surface terminal bonds and microstructure of SiO2 aerogel films on dry etching, APPL SURF S, 169, 2001, pp. 457-462
Authors:
Bae, JW
Kim, JS
Yeom, GY
Citation: Jw. Bae et al., Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system, NUCL INST B, 178, 2001, pp. 311-314
Authors:
Lee, YJ
Bae, JW
Han, HR
Kim, JS
Yeom, GY
Citation: Yj. Lee et al., Dry etching characteristics of ITO thin films deposited on plastic substrates, THIN SOL FI, 383(1-2), 2001, pp. 281-283
Authors:
Park, SH
Jeon, H
Sung, YJ
Yeom, GY
Citation: Sh. Park et al., Refractive sapphire microlenses fabricated by chlorine-based inductively coupled plasma etching, APPL OPTICS, 40(22), 2001, pp. 3698-3702
Effects of H-2 addition in magnetized inductively coupled C2F6 plasma etching of silica aerogel film
Authors:
Wang, SJ
Park, HH
Yeom, GY
Citation: Sj. Wang et al., Effects of H-2 addition in magnetized inductively coupled C2F6 plasma etching of silica aerogel film, JPN J A P 1, 39(12B), 2000, pp. 7007-7010
Authors:
An, TH
Park, JY
Yeom, GY
Chang, EG
Kim, CI
Citation: Th. An et al., Effects of BCl3 addition on Ar/Cl-2 gas in inductively coupled plasmas forlead zirconate titanate etching (vol 18, pg 1373, 2000), J VAC SCI A, 18(6), 2000, pp. 3012-3013
Authors:
Seo, JW
Lee, DH
Lee, WJ
Yu, BG
Kwon, KH
Yeom, GY
Chang, EG
Kim, CI
Citation: Jw. Seo et al., Etching characteristics of SrBi(2)Ya(2)O(9) film with Ar/CHF3 plasma, J VAC SCI A, 18(4), 2000, pp. 1354-1358
Authors:
An, TH
Park, JY
Yeom, GY
Chang, EG
Kim, CI
Citation: Th. An et al., Effects of BCl3 addition on Ar/Cl-2 gas in inductively coupled plasmas forlead zirconate titanate etching, J VAC SCI A, 18(4), 2000, pp. 1373-1376
Authors:
Ryu, JH
Kim, NH
Kim, HS
Yeom, GY
Chang, EG
Kim, CI
Citation: Jh. Ryu et al., Roles of N-2 gas in etching of platinum by inductively coupled Ar/Cl-2/N-2plasmas, J VAC SCI A, 18(4), 2000, pp. 1377-1380
Authors:
Kim, SB
Lee, YH
Kim, TH
Yeom, GY
Kim, CI
Citation: Sb. Kim et al., Etching mechanism of (Ba,Sr)TiO3 films in high density Cl-2/BCl3/Ar plasma, J VAC SCI A, 18(4), 2000, pp. 1381-1384
Authors:
Lee, YH
Sung, YJ
Yeom, GY
Lee, JW
Kim, TI
Citation: Yh. Lee et al., Magnetized inductively coupled plasma etching of GaN in Cl-2/BCl3 plasmas, J VAC SCI A, 18(4), 2000, pp. 1390-1394
Authors:
Han, HR
Lee, YJ
Yeom, GY
Oh, KH
Hong, MP
Citation: Hr. Han et al., Dry etch characteristics of Al-Nd films for TFT-LCD, SURF COAT, 133, 2000, pp. 606-611
Authors:
Lee, YJ
Han, HR
Yeom, GY
Citation: Yj. Lee et al., Characteristics of magnetized inductively coupled plasma source for flat panel display applications, SURF COAT, 133, 2000, pp. 612-616
Authors:
Bae, JW
Kim, HJ
Kim, JS
Lee, YH
Lee, NE
Yeom, GY
Ko, YW
Citation: Jw. Bae et al., Tin-doped indium oxide thin film deposited on organic substrate using oxygen ion beam assisted deposition, SURF COAT, 131(1-3), 2000, pp. 196-200
Authors:
Kim, HJ
Bae, JW
Kim, JS
Kim, KS
Jang, YC
Yeom, GY
Lee, NE
Citation: Hj. Kim et al., Properties of amorphous tin-doped indium oxide thin films deposited by O-2/Ar mixture ion beam-assisted system at room temperature, SURF COAT, 131(1-3), 2000, pp. 201-205
Authors:
Park, JY
Kim, HS
Lee, DH
Kwon, KH
Yeom, GY
Citation: Jy. Park et al., A study on the etch characteristics of ITO thin film using inductively coupled plasmas, SURF COAT, 131(1-3), 2000, pp. 247-251
Authors:
Jang, JW
Lee, YH
Lee, YJ
Lee, J
Yeom, GY
Citation: Jw. Jang et al., Etching characteristics of lead magnesium niobate-lead titanate (PMN-PT) relaxor ferroelectrics, SURF COAT, 131(1-3), 2000, pp. 252-256
Authors:
Lee, YJ
Han, HR
Lee, J
Yeom, GY
Citation: Yj. Lee et al., A study of lead zirconate titanate etching characteristics using magnetized inductively coupled plasmas, SURF COAT, 131(1-3), 2000, pp. 257-260
Authors:
Kim, HS
Lee, DH
Lee, JW
Kim, TI
Yeom, GY
Citation: Hs. Kim et al., Effects of plasma conditions on the etch properties of AlGaN, VACUUM, 56(1), 2000, pp. 45-49