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Results:
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Results: 13
Authors:
Shin, CH
Cha, SY
Lee, HC
Lee, WJ
Yu, BG
Kwak, DH
Citation: Ch. Shin et al., Fabrication and characterization of MFISFET using Al2O3 insulating layer for non-volatile memory, INTEGR FERR, 34(1-4), 2001, pp. 1553-1560
Authors:
You, IK
Lee, WJ
Yang, IS
Yu, BG
Cho, KI
Kim, SH
Citation: Ik. You et al., Effect of NO(Si3N4/SiO2) layers on the electrical properties of MFISFET using SBT(SrBi2Ta2O9) materials, INTEGR FERR, 33(1-4), 2001, pp. 177-184
Authors:
Lee, WJ
You, IK
Yang, IS
Yu, BG
Cho, KI
Citation: Wj. Lee et al., Phase formations and electrical properties of (SrxBa1-x)Bi2Ta2O9 thin films, JPN J A P 1, 39(9B), 2000, pp. 5469-5471
Authors:
Seo, JW
Lee, DH
Lee, WJ
Yu, BG
Kwon, KH
Yeom, GY
Chang, EG
Kim, CI
Citation: Jw. Seo et al., Etching characteristics of SrBi(2)Ya(2)O(9) film with Ar/CHF3 plasma, J VAC SCI A, 18(4), 2000, pp. 1354-1358
Authors:
Aramwit, P
Yu, BG
Lavasanifar, A
Samuel, J
Kwon, GS
Citation: P. Aramwit et al., The effect of serum albumin on the aggregation state and toxicity of amphotericin B, J PHARM SCI, 89(12), 2000, pp. 1589-1593
Authors:
Lee, WJ
Shin, CH
Cho, CR
Lyu, JS
Kim, BW
Yu, BG
Cho, KI
Citation: Wj. Lee et al., Electrical properties of SrBi2Ta2O9/insulator/Si structures with various insulators, JPN J A P 1, 38(4A), 1999, pp. 2039-2043
Authors:
Cho, CR
Lee, WJ
Yu, BG
Kim, BW
Park, KB
Citation: Cr. Cho et al., Structural and ferroelectric properties of sol-gel deposited Nb-doped Pb[(Sc1/2Nb1/2)(0.57)Ti-0.43]O-3 thin films, JPN J A P 1, 38(3A), 1999, pp. 1459-1465
Authors:
Lee, WJ
Cho, CR
Kim, SH
You, IK
Kim, BW
Yu, BG
Shin, CH
Lee, HC
Citation: Wj. Lee et al., Etching behavior and damage recovery of SrBi2Ta2O9 thin films, JPN J A P 2, 38(12A), 1999, pp. L1428-L1431
Authors:
Lee, WJ
Yu, BG
Lyu, JS
Lee, JH
Kim, BW
Shin, CH
Lee, HC
Citation: Wj. Lee et al., SrBi2Ta2O9/insulator/Si structure for metal/ferroelectric/ insulators/Si (MFIS) in an NDRO-type ferroelectric random access memory, J KOR PHYS, 35, 1999, pp. S509-S512
Authors:
Yu, BG
Lee, WJ
Cho, CR
Shin, CH
Kim, BW
Citation: Bg. Yu et al., The effect of annealing temperature on electrical properties of SrBi2Ta2O9/insulators/Si(MFIS) structure for NDRO-type FRAM devices, CRYST RES T, 34(9), 1999, pp. 1197-1204
Authors:
Cho, CR
Lee, WJ
Yu, BG
Kim, BW
Citation: Cr. Cho et al., Dielectric and ferroelectric response as a function of annealing temperature and film thickness of sol-gel deposited Pb(Zr0.52Ti0.48)O-3 thin film, J APPL PHYS, 86(5), 1999, pp. 2700-2711
Authors:
Lyu, JS
Jeong, JW
Yu, BG
Kim, BW
Citation: Js. Lyu et al., Characteristics of MFSFET considering various parameters of the ferroelectric and inter-dielectric, J KOR PHYS, 33, 1998, pp. S166-S169
Authors:
Yu, BG
Okano, T
Kataoka, K
Sardari, S
Kwon, GS
Citation: Bg. Yu et al., In vitro dissociation of antifungal efficacy and toxicity for amphotericinB-loaded poly(ethylene oxide)-block-poly( beta-benzyl-L-aspartate) micelles, J CONTR REL, 56(1-3), 1998, pp. 285-291
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1-13
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