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Results: 1-23 |
Results: 23
Growth of Si-doped InAs quantum dots and annealing effects on size distribution
Authors: Kim, JS Yu, PW Leem, JY Lee, JI Noh, SK Kim, JS Kim, GH Kang, SK Ban, SI Kim, SG Jang, YD Lee, UH Yim, JS Lee, D
Citation: Js. Kim et al., Growth of Si-doped InAs quantum dots and annealing effects on size distribution, J CRYST GR, 234(1), 2002, pp. 105-109
p15(PAF), a novel PCNA associated factor with increased expression in tumor tissues
Authors: Yu, PW Huang, B Shen, M Lau, C Chan, E Michel, J Xiong, Y Payan, DG Luo, Y
Citation: Pw. Yu et al., p15(PAF), a novel PCNA associated factor with increased expression in tumor tissues, ONCOGENE, 20(4), 2001, pp. 484-489
Optical investigation of InGaN/GaN quantum well structures with various barrier widths
Authors: Yu, YJ Ryu, MY Yu, PW Kim, DJ Park, SJ
Citation: Yj. Yu et al., Optical investigation of InGaN/GaN quantum well structures with various barrier widths, J KOR PHYS, 38(2), 2001, pp. 134-137
Optical properties and recombination dynamics of InGaN/GaN multiple quantum wells with Si-doped barriers
Authors: Ryu, MY Yu, PW Oh, E Sone, C Nam, O Park, Y
Citation: My. Ryu et al., Optical properties and recombination dynamics of InGaN/GaN multiple quantum wells with Si-doped barriers, SOL ST COMM, 118(11), 2001, pp. 547-551
Functional cloning of Src-like adapter protein-2 (SLAP-2), a novel inhibitor of antigen receptor signaling
Authors: Holland, SJ Liao, XC Mendenhall, MK Zhou, XL Pardo, J Chu, P Spencer, C Fu, A Sheng, N Yu, PW Pali, E Nagin, A Shen, M Yu, S Chan, E Wu, X Li, C Woisetschlager, M Aversa, G Kolbinger, F Bennett, MK Molineaux, S Luo, Y Payan, DG Mancebo, HSY Wu, J
Citation: Sj. Holland et al., Functional cloning of Src-like adapter protein-2 (SLAP-2), a novel inhibitor of antigen receptor signaling, J EXP MED, 194(9), 2001, pp. 1263-1276
Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition
Authors: Cho, HK Lee, JY Kim, KS Yang, GM Song, JH Yu, PW
Citation: Hk. Cho et al., Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition, J APPL PHYS, 89(5), 2001, pp. 2617-2621
Cathodoluminescence study of InxGa1-xN quantum wells
Authors: Oh, E Lee, MH Kim, KJ Ryu, MY Song, JH Park, SW Yu, PW Park, H Park, Y
Citation: E. Oh et al., Cathodoluminescence study of InxGa1-xN quantum wells, J APPL PHYS, 89(5), 2001, pp. 2839-2842
Photoluminescence studies of GaN layers grown by hydride vapor phase epitaxy
Authors: Yu, PW Park, CS Kim, ST
Citation: Pw. Yu et al., Photoluminescence studies of GaN layers grown by hydride vapor phase epitaxy, J APPL PHYS, 89(3), 2001, pp. 1692-1695
Effects of Si-doping in the barriers on the recombination dynamics in In0.15Ga0.85N/In0.015Ga0.985N quantum wells
Authors: Ryu, MY Yu, PW Shin, EJ Lee, JI Yu, SK Oh, E Nam, OH Sone, CS Park, YJ
Citation: My. Ryu et al., Effects of Si-doping in the barriers on the recombination dynamics in In0.15Ga0.85N/In0.015Ga0.985N quantum wells, J APPL PHYS, 89(1), 2001, pp. 634-637
Effect of growth interruptions on the light emission and indium clusteringof InGaN/GaN multiple quantum wells
Authors: Cho, HK Lee, JY Sharma, N Humphreys, CJ Yang, GM Kim, CS Song, JH Yu, PW
Citation: Hk. Cho et al., Effect of growth interruptions on the light emission and indium clusteringof InGaN/GaN multiple quantum wells, APPL PHYS L, 79(16), 2001, pp. 2594-2596
Energy level control for self-assembled InAs quantum dots utilizing a thinAlAs layer
Authors: Kim, JS Yu, PW Leem, JY Lee, JI Noh, SK Kim, JS Kim, SM Son, JS Lee, UH Yim, JS Lee, D
Citation: Js. Kim et al., Energy level control for self-assembled InAs quantum dots utilizing a thinAlAs layer, APPL PHYS L, 78(21), 2001, pp. 3247-3249
Metastability of defects in p-GaAs grown from a Ga-rich melt
Authors: Fang, ZQ Kim, JW Yu, PW
Citation: Zq. Fang et al., Metastability of defects in p-GaAs grown from a Ga-rich melt, APPL PHYS L, 78(17), 2001, pp. 2506-2508
Effects of Si doping in the barriers on the optical properties of In0.15Ga0.85N/In-0.015 Ga0.985N multiple quantum wells
Authors: Ryu, MY Yu, YJ Yu, PW Shin, EJ Lee, JI Yu, SK Oh, ES Nam, OH Sone, CS Park, YJ
Citation: My. Ryu et al., Effects of Si doping in the barriers on the optical properties of In0.15Ga0.85N/In-0.015 Ga0.985N multiple quantum wells, J KOR PHYS, 37(6), 2000, pp. 989-992
Photoluminescence study of InGaN/GaN double quantum wells with varying barrier widths
Authors: Ryu, MY Yu, PW Shin, EJ Lee, JI Yu, SK Oh, ES Park, YJ Park, HS Kim, TI
Citation: My. Ryu et al., Photoluminescence study of InGaN/GaN double quantum wells with varying barrier widths, J KOR PHYS, 37(4), 2000, pp. 387-390
Photoluminescence and photoreflectance measurements on InGaN/GaN structures
Authors: Ryu, MY Yu, PW Kim, JS Shin, EJ Lee, JI Yu, SK Oh, ES Park, YJ Park, HS Kim, TI
Citation: My. Ryu et al., Photoluminescence and photoreflectance measurements on InGaN/GaN structures, J KOR PHYS, 37(3), 2000, pp. 300-303
Silicon doping effect on the optical properties of In0.15Ga0.85N/In0.15Ga0.985N quantum wells
Authors: Ryu, MY Yu, YJ Shin, EJ Yu, PW Lee, JI Yu, SK Oh, ES Nam, OH Sone, CS Park, YJ
Citation: My. Ryu et al., Silicon doping effect on the optical properties of In0.15Ga0.85N/In0.15Ga0.985N quantum wells, SOL ST COMM, 116(12), 2000, pp. 675-678
Splitting of the heavy and light hole bands due to the indium-induced strain in three inch indium-alloyed semi-insulating GaAs substrates
Authors: Kim, JS Yu, PW
Citation: Js. Kim et Pw. Yu, Splitting of the heavy and light hole bands due to the indium-induced strain in three inch indium-alloyed semi-insulating GaAs substrates, J APPL PHYS, 88(3), 2000, pp. 1476-1479
Identification of RIP3, a RIP-like kinase that activates apoptosis and NF kappa B
Authors: Yu, PW Huang, BCB Shen, M Quast, J Chan, E Xu, X Nolan, GP Payan, DG Luo, Y
Citation: Pw. Yu et al., Identification of RIP3, a RIP-like kinase that activates apoptosis and NF kappa B, CURR BIOL, 9(10), 1999, pp. 539-542
Optical transitions in InGaN/GaN double heterostructures
Authors: Ryu, MY Yu, PW Shin, EJ Song, NW Lee, JI Kim, D Oh, ES Park, YJ Park, HS Kim, TI
Citation: My. Ryu et al., Optical transitions in InGaN/GaN double heterostructures, J KOR PHYS, 35, 1999, pp. S1021-S1024
Time-resolved photoluminescence measurements in InGaN GaN quantum wells grown by MOCVD
Authors: Shin, EJ Song, NW Lee, JI Kim, D Ryu, MY Yu, PW Lee, D Choi, YH Hong, CH
Citation: Ej. Shin et al., Time-resolved photoluminescence measurements in InGaN GaN quantum wells grown by MOCVD, J KOR PHYS, 34, 1999, pp. S374-S377
Donor-acceptor pair and free-to-bound recombinations in undoped thick GaN grown by HVPE
Authors: Park, CS Yu, PW Kim, ST
Citation: Cs. Park et al., Donor-acceptor pair and free-to-bound recombinations in undoped thick GaN grown by HVPE, J KOR PHYS, 34, 1999, pp. S393-S396
The splitting of heavy and light holes due to the indium-induced strain in3-inch indium-alloyed semi-insulating GaAs substrates
Authors: Kim, JS Park, SW Yu, PW
Citation: Js. Kim et al., The splitting of heavy and light holes due to the indium-induced strain in3-inch indium-alloyed semi-insulating GaAs substrates, J KOR PHYS, 34, 1999, pp. S458-S460
Localized excitons in InxGa1-xN/GaN quantum well structure
Authors: Ryu, MY Song, JH Park, SW Yu, PW Oh, ES Park, YJ Park, HS Kim, TI
Citation: My. Ryu et al., Localized excitons in InxGa1-xN/GaN quantum well structure, J KOR PHYS, 33, 1998, pp. S316-S318
Risultati: 1-23 |