AAAAAA

   
Results: 1-13 |
Results: 13
Loss of annexin A7 leads to alterations in frequency-induced shortening ofisolated murine cardiomyocytes
Authors: Herr, C Smyth, N Ullrich, S Yun, F Sasse, P Hescheler, J Fleischmann, B Lasek, K Brixius, K Schwinger, RHC Fassler, R Schroder, R Noegel, AA
Citation: C. Herr et al., Loss of annexin A7 leads to alterations in frequency-induced shortening ofisolated murine cardiomyocytes, MOL CELL B, 21(13), 2001, pp. 4119-4128
Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy
Authors: Huang, D Yun, F Reshchikov, MA Wang, D Morkoc, H Rode, DL Farina, LA Kurdak, C Tsen, KT Park, SS Lee, KY
Citation: D. Huang et al., Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy, SOL ST ELEC, 45(5), 2001, pp. 711-715
Photoluminescence of GaN grown by molecular-beam epitaxy on a freestandingGaN template
Authors: Reshchikov, MA Huang, D Yun, F He, L Morkoc, H Reynolds, DC Park, SS Lee, KY
Citation: Ma. Reshchikov et al., Photoluminescence of GaN grown by molecular-beam epitaxy on a freestandingGaN template, APPL PHYS L, 79(23), 2001, pp. 3779-3781
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
Authors: Huang, D Visconti, P Jones, KM Reshchikov, MA Yun, F Baski, AA King, T Morkoc, H
Citation: D. Huang et al., Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy, APPL PHYS L, 78(26), 2001, pp. 4145-4147
Investigation of inversion domains in GaN by electric-force microscopy
Authors: Jones, KM Visconti, P Yun, F Baski, AA Morkoc, H
Citation: Km. Jones et al., Investigation of inversion domains in GaN by electric-force microscopy, APPL PHYS L, 78(17), 2001, pp. 2497-2499
Characterization of free-standing hydride vapor phase epitaxy GaN
Authors: Jasinski, J Swider, W Liliental-Weber, Z Visconti, P Jones, KM Reshchikov, MA Yun, F Morkoc, H Park, SS Lee, KY
Citation: J. Jasinski et al., Characterization of free-standing hydride vapor phase epitaxy GaN, APPL PHYS L, 78(16), 2001, pp. 2297-2299
Deep centers in a free-standing GaN layer
Authors: Fang, ZQ Look, DC Visconti, P Wang, DF Lu, CZ Yun, F Morkoc, H Park, SS Lee, KY
Citation: Zq. Fang et al., Deep centers in a free-standing GaN layer, APPL PHYS L, 78(15), 2001, pp. 2178-2180
Room temperature single-electron narrow-channel memory with silicon nanodots embedded in SiO2 matrix
Authors: Yun, F Hinds, BJ Hatatani, S Oda, S
Citation: F. Yun et al., Room temperature single-electron narrow-channel memory with silicon nanodots embedded in SiO2 matrix, JPN J A P 2, 39(8A), 2000, pp. L792-L795
Preparation of sapphire for high quality III-nitride growth
Authors: Cui, J Sun, A Reshichkov, M Yun, F Baski, A Morkoc, H
Citation: J. Cui et al., Preparation of sapphire for high quality III-nitride growth, MRS I J N S, 5(7), 2000, pp. 1-6
Polycrystalline silicon films prepared by improved pulsed rapid thermal annealing
Authors: Zhao, YW Wang, WJ Yun, F Xu, Y Liao, XB Ma, ZX Yue, GH Kong, GL
Citation: Yw. Zhao et al., Polycrystalline silicon films prepared by improved pulsed rapid thermal annealing, SOL EN MAT, 62(1-2), 2000, pp. 143-148
Study of structural and optical properties of nanocrystalline silicon embedded in SiO2
Authors: Yun, F Hinds, BJ Hatatani, S Oda, S Zhao, QX Willander, M
Citation: F. Yun et al., Study of structural and optical properties of nanocrystalline silicon embedded in SiO2, THIN SOL FI, 375(1-2), 2000, pp. 137-141
Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy
Authors: Yun, F Reshchikov, MA Jones, K Visconti, P Morkoc, H Park, SS Lee, KY
Citation: F. Yun et al., Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy, SOL ST ELEC, 44(12), 2000, pp. 2225-2232
Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration
Authors: Visconti, P Jones, KM Reshchikov, MA Yun, F Cingolani, R Morkoc, H Park, SS Lee, KY
Citation: P. Visconti et al., Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration, APPL PHYS L, 77(23), 2000, pp. 3743-3745
Risultati: 1-13 |