Authors: ZAGOZDZONWOSIK W KORABLEV K RUSAKOVA I SIMONS D SHI JH CHI P WOLFE JC

Citation: W. Zagozdzonwosik et al., FORMATION OF SHALLOW JUNCTIONS DURING RAPID THERMAL-PROCESSING FROM ELECTRON-BEAM DEPOSITED BORON SOURCES, Journal of the Electrochemical Society, 143(9), 1996, pp. 2981-2989

Authors: GRABIEC PB ZAGOZDZONWOSIK W LUX G

Citation: Pb. Grabiec et al., KINETICS OF PHOSPHORUS PROXIMITY RAPID THERMAL-DIFFUSION USING SPIN-ON DOPANT SOURCE FOR SHALLOW JUNCTIONS FABRICATION, Journal of applied physics, 78(1), 1995, pp. 204-211

Authors: ZAGOZDZONWOSIK W PAN D DAVIS MF RUSAKOVA I ZHANG ZH RHODES K

Citation: W. Zagozdzonwosik et al., DOPING OF P-TYPE SHALLOW JUNCTIONS USING ELECTRON-BEAM EVAPORATION OFBORON LAYERS FOR COMPATIBILITY WITH COMPLEMENTARY-METAL-OXIDE SEMICONDUCTOR TECHNOLOGY, Applied physics letters, 66(1), 1995, pp. 76-78

Authors: ZAGOZDZONWOSIK W GRABIEC PB LUX G

Citation: W. Zagozdzonwosik et al., SILICON DOPING FROM PHOSPHORUS SPIN-ON DOPANT SOURCES IN PROXIMITY RAPID THERMAL-DIFFUSION, Journal of applied physics, 75(1), 1994, pp. 337-344

Authors: ZAGOZDZONWOSIK W GRABIEC PB LUX G

Citation: W. Zagozdzonwosik et al., FABRICATION OF SUBMICRON JUNCTIONS - PROXIMITY RAPID THERMAL-DIFFUSION OF PHOSPHORUS, BORON, AND ARSENIC, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2281-2290