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Results: 1-13 |
Results: 13
A MODEL SYSTEM FOR SCANDATE CATHODES
Authors: ZAGWIJN PM FRENKEN JWM VANSLOOTEN U DUINE PA
Citation: Pm. Zagwijn et al., A MODEL SYSTEM FOR SCANDATE CATHODES, Applied surface science, 111, 1997, pp. 35-41
SEGREGATION AND TRAPPING OF ERBIUM AT A MOVING CRYSTAL-AMORPHOUS SI INTERFACE
Authors: POLMAN A CUSTER JS ZAGWIJN PM MOLENBROEK AM ALKEMADE PFA
Citation: A. Polman et al., SEGREGATION AND TRAPPING OF ERBIUM AT A MOVING CRYSTAL-AMORPHOUS SI INTERFACE, Journal of applied physics, 81(1), 1997, pp. 150-153
ATOMIC-STRUCTURE AND THERMAL-STABILITY OF 2-DIMENSIONAL ER SILICIDE ON SI(111)
Authors: LOHMEIER M HUISMAN WJ TERHORST G ZAGWIJN PM VLIEG E NICKLIN CL TURNER TS
Citation: M. Lohmeier et al., ATOMIC-STRUCTURE AND THERMAL-STABILITY OF 2-DIMENSIONAL ER SILICIDE ON SI(111), Physical review. B, Condensed matter, 54(3), 1996, pp. 2004-2009
GROWTH MODE AND INTERFACE STRUCTURE OF AG ON THE HF-TREATED SI(111)H SURFACE
Authors: NISHIYAMA A TERHORST G ZAGWIJN PM VANDENHOVEN GN FRENKEN JWM GARTEN F SCHLATMANN AR VRIJMOETH J
Citation: A. Nishiyama et al., GROWTH MODE AND INTERFACE STRUCTURE OF AG ON THE HF-TREATED SI(111)H SURFACE, Surface science, 350(1-3), 1996, pp. 229-238
A SOLUTION OF THE DOPING PROBLEM FOR GA DELTA-DOPING LAYERS IN SI
Authors: ZAGWIJN PM VANDERVEEN JF VLIEG E READER AH GRAVESTEIJN DJ
Citation: Pm. Zagwijn et al., A SOLUTION OF THE DOPING PROBLEM FOR GA DELTA-DOPING LAYERS IN SI, Journal of applied physics, 78(8), 1995, pp. 4933-4938
SEGREGATION AND TRAPPING OF ERBIUM DURING SILICON MOLECULAR-BEAM EPITAXY
Authors: SERNA R LOHMEIER M ZAGWIJN PM VLIEG E POLMAN A
Citation: R. Serna et al., SEGREGATION AND TRAPPING OF ERBIUM DURING SILICON MOLECULAR-BEAM EPITAXY, Applied physics letters, 66(11), 1995, pp. 1385-1387
2-DIMENSIONAL POSITION-SENSITIVE DETECTION FOR MEDIUM-ENERGY ION-SCATTERING
Authors: ZAGWIJN PM MOLENBROEK AM VRIJMOETH J RUWIEL GJ UITERLINDEN RM TERHORST J TERBEEK J FRENKEN JWM
Citation: Pm. Zagwijn et al., 2-DIMENSIONAL POSITION-SENSITIVE DETECTION FOR MEDIUM-ENERGY ION-SCATTERING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 94(1-2), 1994, pp. 137-149
TRANSIENT DIFFUSION OF GA IN AMORPHOUS-SILICON
Authors: ZAGWIJN PM HUISMAN WJ POLMAN A VLIEG E READER AH GRAVESTEIJN DJ
Citation: Pm. Zagwijn et al., TRANSIENT DIFFUSION OF GA IN AMORPHOUS-SILICON, Journal of applied physics, 76(10), 1994, pp. 5719-5723
FORMATION OF IRONSILICIDE ON SI(001)
Authors: KONUMA K VRIJMOETH J ZAGWIJN PM VLIEG E VANDERVEEN JF
Citation: K. Konuma et al., FORMATION OF IRONSILICIDE ON SI(001), Applied surface science, 70-1, 1993, pp. 564-568
THE INITIAL-STAGES OF THE OXIDATION OF AL(111) .1.
Authors: OCONNOR DJ WOUTERS ER VANDERGON AWD VANDERVEEN JF ZAGWIJN PM FRENKEN JWM
Citation: Dj. Oconnor et al., THE INITIAL-STAGES OF THE OXIDATION OF AL(111) .1., Surface science, 296(2), 1993, pp. 131-140
THE INITIAL-STAGES OF THE OXIDATION OF AL(111) .2.
Authors: WOUTERS ER OCONNOR DJ VANDERVEEN JF ZAGWIJN PM VRIJMOETH J SLIJKERMAN W FRENKEN JWM
Citation: Er. Wouters et al., THE INITIAL-STAGES OF THE OXIDATION OF AL(111) .2., Surface science, 296(2), 1993, pp. 141-148
STRUCTURE DETERMINATION OF THE NISI2(111) SURFACE WITH MEDIUM-ENERGY ION BACKSCATTERING FROM INDIVIDUAL MONOLAYERS
Authors: VRIJMOETH J ZAGWIJN PM VLIEG E FRENKEN JWM ALKEMADE PFA
Citation: J. Vrijmoeth et al., STRUCTURE DETERMINATION OF THE NISI2(111) SURFACE WITH MEDIUM-ENERGY ION BACKSCATTERING FROM INDIVIDUAL MONOLAYERS, Surface science, 290(3), 1993, pp. 255-266
OXIDATION OF AL(111)
Authors: OCONNOR DJ WOUTERS ER VANDERGON AWD VRIJMOETH J ZAGWIJN PM SLIJKERMAN WFJ FRENKEN JWM VANDERVEEN JF
Citation: Dj. Oconnor et al., OXIDATION OF AL(111), Surface science, 287, 1993, pp. 438-442
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