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Results:
1-22
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Results: 22
Authors:
WIJEWARNASURIYA PS
ZANDIAN M
EDWALL DD
MCLEVIGE WV
CHEN CA
PASKO JG
HILDEBRANDT G
CHEN AC
ARIAS JM
DSOUZA AI
RUJIRAWAT S
SIVANATHAN S
Citation: Ps. Wijewarnasuriya et al., MBE P-ON-N HG1-XCDXTE HETEROSTRUCTURE DETECTORS ON SILICON SUBSTRATES, Journal of electronic materials, 27(6), 1998, pp. 546-549
Authors:
CHEN AC
ZANDIAN M
EDWALL DD
DEWAMES RE
WIJEWARNASURIYA PS
ARIAS JM
SIVANANTHAN S
BERDING M
SHER A
Citation: Ac. Chen et al., MBE GROWTH AND CHARACTERIZATION OF IN-SITU ARSENIC DOPED HGCDTE, Journal of electronic materials, 27(6), 1998, pp. 595-599
Authors:
DEWAMES RE
EDWALL DD
ZANDIAN M
BUBULAC LO
PASKO JG
TENNANT WE
ARIAS JM
DSOUZA A
Citation: Re. Dewames et al., DARK CURRENT GENERATING MECHANISMS IN SHORT-WAVELENGTH INFRARED PHOTOVOLTAIC DETECTORS, Journal of electronic materials, 27(6), 1998, pp. 722-726
Authors:
EDWALL DD
ZANDIAN M
CHEN AC
ARIAS JM
Citation: Dd. Edwall et al., IMPROVING MATERIAL CHARACTERISTICS AND REPRODUCIBILITY OF MBE HGCDTE, Journal of electronic materials, 26(6), 1997, pp. 493-501
Authors:
SIVANANTHAN S
WIJEWARNASURIYA PS
AQARIDEN F
VYDYANATH HR
ZANDIAN M
EDWALL DD
ARIAS JM
Citation: S. Sivananthan et al., MODE OF ARSENIC INCORPORATION IN HGCDTE GROWN BY MBE, Journal of electronic materials, 26(6), 1997, pp. 621-624
Authors:
BUBULAC LO
TENNANT WE
PASKO JG
KOZLOWSKI LJ
ZANDIAN M
MOTAMEDI ME
DEWAMES RE
BAJAJ J
NAYAR N
MCLEVIGE WV
GLUCK NS
MELENDES R
COOPER DE
EDWALL DD
ARIAS JM
HALL R
DSOUZA AI
Citation: Lo. Bubulac et al., HIGH-PERFORMANCE SWIR HGCDTE DETECTOR ARRAYS, Journal of electronic materials, 26(6), 1997, pp. 649-655
Authors:
DSOUZA AI
DAWSON LC
ANDERSON EJ
MARKUM AD
TENNANT WE
BUBULAC LO
ZANDIAN M
PASKO JG
MCLEVIGE WV
EDWALL DD
DERR JW
JANDIK JE
Citation: Ai. Dsouza et al., VSWIR TO VLWIR MBE GROWN HGCDTE MATERIAL AND DETECTORS FOR REMOTE-SENSING APPLICATIONS, Journal of electronic materials, 26(6), 1997, pp. 656-661
Authors:
MOTAMEDI ME
TENNANT WE
SANKUR HO
MELENDES R
GLUCK NS
PARK S
ARIAS JM
BAJAJ J
PASKO JG
MCLEVIGE WV
ZANDIAN M
HALL RL
RICHARDSON PD
Citation: Me. Motamedi et al., MICROOPTIC INTEGRATION WITH FOCAL-PLANE ARRAYS, Optical engineering, 36(5), 1997, pp. 1374-1381
Authors:
ZANDIAN M
CHEN AC
EDWALL DD
PASKO JG
ARIAS JM
Citation: M. Zandian et al., P-TYPE ARSENIC DOPING OF HG1-XCDXTE BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 71(19), 1997, pp. 2815-2817
PLANAR P-ON-N HGCDTE HETEROSTRUCTURE INFRARED PHOTODIODES ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
Authors:
DHAR NK
ZANDIAN M
PASKO JG
ARIAS JM
DINAN JH
Citation: Nk. Dhar et al., PLANAR P-ON-N HGCDTE HETEROSTRUCTURE INFRARED PHOTODIODES ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 70(13), 1997, pp. 1730-1732
Authors:
BUBULAC LO
BAJAJ J
TENNANT WE
ZANDIAN M
PASKO J
MCLEVIGE WV
Citation: Lo. Bubulac et al., CHARACTERISTICS AND UNIFORMITY OF GROUP-V IMPLANTED AND ANNEALED HGCDTE HETEROSTRUCTURE, Journal of electronic materials, 25(8), 1996, pp. 1312-1317
Authors:
BAJAJ J
ARIAS JM
ZANDIAN M
EDWALL DD
PASKO JG
BUBULAC LO
KOZLOWSKI LJ
Citation: J. Bajaj et al., UNIFORM LOW DEFECT DENSITY MOLECULAR-BEAM EPITAXIAL HGCDTE, Journal of electronic materials, 25(8), 1996, pp. 1394-1401
Authors:
BAJAJ J
ARIAS JM
ZANDIAN M
PASKO JG
KOZLOWSKI LJ
DEWAMES RE
TENNANT WE
Citation: J. Bajaj et al., MOLECULAR-BEAM EPITAXIAL HGCDTE MATERIAL CHARACTERISTICS AND DEVICE PERFORMANCE - REPRODUCIBILITY STATUS, Journal of electronic materials, 24(9), 1995, pp. 1067-1076
Authors:
BUBULAC LO
TENNANT WE
BAJAJ J
SHENG J
BRIGHAM R
VANDERWYCK AHB
ZANDIAN M
MCLEVIGE WV
Citation: Lo. Bubulac et al., CHARACTERIZATION OF CDTE FOR HGCDTE SURFACE PASSIVATION, Journal of electronic materials, 24(9), 1995, pp. 1175-1182
Authors:
ZANDIAN M
ARIAS JM
BAJAJ J
PASKO JG
BUBULAC LO
DEWAMES RE
Citation: M. Zandian et al., ORIGIN OF VOID DEFECTS IN HG1-XCDXTE GROWN BY MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 24(9), 1995, pp. 1207-1210
Authors:
ARIAS JM
ZANDIAN M
BAJAJ J
PASKO JG
BUBULAC LO
SHIN SH
DEWAMES RE
Citation: Jm. Arias et al., MOLECULAR-BEAM EPITAXY HGCDTE GROWTH-INDUCED VOID DEFECTS AND THEIR EFFECT ON INFRARED PHOTODIODES, Journal of electronic materials, 24(5), 1995, pp. 521-524
Authors:
SHIN SH
ARIAS JM
ZANDIAN M
PASKO JG
BUBULAC LO
DEWAMES RE
Citation: Sh. Shin et al., ENHANCED ARSENIC DIFFUSION AND ACTIVATION IN HGCDTE, Journal of electronic materials, 24(5), 1995, pp. 609-615
Authors:
ZANDIAN M
PASKO JG
ARIAS JM
DEWAMES RE
SHIN SH
Citation: M. Zandian et al., ROOM-TEMPERATURE CHARACTERIZATION OF HG1-XCDXTE P-ON-N HETEROSTRUCTURE PHOTODIODES, Journal of electronic materials, 24(5), 1995, pp. 681-684
Authors:
ARIAS JM
PASKO JG
ZANDIAN M
KOZLOWSKI LJ
DEWAMES RE
Citation: Jm. Arias et al., MOLECULAR-BEAM EPITAXY HGCDTE INFRARED PHOTOVOLTAIC DETECTORS, Optical engineering, 33(5), 1994, pp. 1422-1428
Authors:
LE HQ
ARIAS JM
ZANDIAN M
ZUCCA R
LIU YZ
Citation: Hq. Le et al., HIGH-POWER DIODE-LASER-PUMPED MIDWAVE INFRARED HGCDTE CDZNTE QUANTUM-WELL LASERS/, Applied physics letters, 65(7), 1994, pp. 810-812
Authors:
SHIN SH
ARIAS JM
ZANDIAN M
PASKO JG
BUBULAC LO
DEWAMES RE
Citation: Sh. Shin et al., ANNEALING EFFECT ON THE P-TYPE CARRIER CONCENTRATION IN LOW-TEMPERATURE PROCESSED ARSENIC-DOPED HGCDTE, Journal of electronic materials, 22(8), 1993, pp. 1039-1047
Authors:
ARIAS JM
PASKO JG
ZANDIAN M
SHIN SH
WILLIAMS GM
BUBULAC LO
DEWAMES RE
TENNANT WE
Citation: Jm. Arias et al., MBE HGCDTE HETEROSTRUCTURE P-ON-N PLANAR INFRARED PHOTODIODES, Journal of electronic materials, 22(8), 1993, pp. 1049-1053
Risultati:
1-22
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