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Results: 1-25 | 26-35 |
Results: 26-35/35
HOT-ELECTRON LUMINESCENCE IN IN0.53GA0.47AS TRANSISTOR CHANNEL
Authors: MASTRAPASQUA M BERTHOLD G CANALI C LURYI S ZANONI E MANFREDI M SIVCO DL CHO AY
Citation: M. Mastrapasqua et al., HOT-ELECTRON LUMINESCENCE IN IN0.53GA0.47AS TRANSISTOR CHANNEL, Applied physics letters, 66(11), 1995, pp. 1376-1378
MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: CANALI C CAPASSO F MALIK R NEVIANI A PAVAN P TEDESCO C ZANONI E
Citation: C. Canali et al., MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS, IEEE electron device letters, 15(9), 1994, pp. 354-356
IMPACT IONIZATION AND REAL-SPACE TRANSFER OF MINORITY-CARRIERS IN CHARGE INJECTION TRANSISTORS
Authors: TEDESCO C MASTRAPASQUA M CANALI C LURYI S MANFREDI M ZANONI E SIVCO DL CHO AY
Citation: C. Tedesco et al., IMPACT IONIZATION AND REAL-SPACE TRANSFER OF MINORITY-CARRIERS IN CHARGE INJECTION TRANSISTORS, IEEE electron device letters, 15(10), 1994, pp. 377-379
EXPERIMENTAL CHARACTERIZATION OF HOT-ELECTRON-INDUCED EFFECTS AND LIGHT-EMISSION IN HETEROSTRUCTURE DEVICES
Authors: ZANONI E NEVIANI A TEDESCO C MANFREDI M CANALI C
Citation: E. Zanoni et al., EXPERIMENTAL CHARACTERIZATION OF HOT-ELECTRON-INDUCED EFFECTS AND LIGHT-EMISSION IN HETEROSTRUCTURE DEVICES, Semiconductor science and technology, 9(5), 1994, pp. 651-658
EXTRACTION OF DC BASE PARASITIC RESISTANCE OF BIPOLAR-TRANSISTORS BASED ON IMPACT-IONIZATION-INDUCED BASE CURRENT REVERSAL
Authors: VERZELLESI G TURETTA R PAVAN P COLLINI A CHANTRE A MARTY A CANALI C ZANONI E
Citation: G. Verzellesi et al., EXTRACTION OF DC BASE PARASITIC RESISTANCE OF BIPOLAR-TRANSISTORS BASED ON IMPACT-IONIZATION-INDUCED BASE CURRENT REVERSAL, IEEE electron device letters, 14(9), 1993, pp. 431-434
IMPACT IONIZATION AND LIGHT-EMISSION IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
Authors: NEVIANI A TEDESCO C ZANONI E CANALI C MANFREDI M CETRONIO A
Citation: A. Neviani et al., IMPACT IONIZATION AND LIGHT-EMISSION IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Journal of applied physics, 74(6), 1993, pp. 4213-4220
IMPACT IONIZATION AND LIGHT-EMISSION IN HIGH-POWER PSEUDOMORPHIC ALGAAS INGAAS HEMTS/
Authors: TEDESCO C ZANONI E CANALI C BIGLIARDI S MANFREDI M STREIT DC ANDERSON WT
Citation: C. Tedesco et al., IMPACT IONIZATION AND LIGHT-EMISSION IN HIGH-POWER PSEUDOMORPHIC ALGAAS INGAAS HEMTS/, I.E.E.E. transactions on electron devices, 40(7), 1993, pp. 1211-1214
PREDICTION OF IMPACT-IONIZATION-INDUCED SNAP-BACK IN ADVANCED SI N-P-N BJTS BY MEANS OF A NONLOCAL ANALYTICAL MODEL FOR THE AVALANCHE MULTIPLICATION FACTOR
Authors: VERZELLESI G BACCARANI G CANALI C PAVAN P VENDRAME L ZANONI E
Citation: G. Verzellesi et al., PREDICTION OF IMPACT-IONIZATION-INDUCED SNAP-BACK IN ADVANCED SI N-P-N BJTS BY MEANS OF A NONLOCAL ANALYTICAL MODEL FOR THE AVALANCHE MULTIPLICATION FACTOR, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2296-2300
NEW METHOD FOR EXTRACTING COLLECTOR SERIES RESISTANCE OF BIPOLAR-TRANSISTORS
Authors: VERZELLESI G TURETTA R CAPPELLIN M PAVAN P CHANTRE A ZANONI E
Citation: G. Verzellesi et al., NEW METHOD FOR EXTRACTING COLLECTOR SERIES RESISTANCE OF BIPOLAR-TRANSISTORS, Electronics Letters, 29(10), 1993, pp. 931-933
HOT-CARRIER-INDUCED PHOTON-EMISSION IN SUBMICRON GAAS DEVICES
Authors: ZANONI E TEDESCO C MANFREDI M SARANITI M LUGLI P
Citation: E. Zanoni et al., HOT-CARRIER-INDUCED PHOTON-EMISSION IN SUBMICRON GAAS DEVICES, Semiconductor science and technology, 7(3B), 1992, pp. 543-545
Risultati: 1-25 | 26-35 |