Authors: LEGAY P ALEXANDRE F NUNEZ M SAPRIEL J ZERGUINE D BENCHIMOL JL

Citation: P. Legay et al., UNIFORM SELECTIVE-AREA GROWTH OF GAAS AND GAINP BY LOW-TEMPERATURE CHEMICAL BEAM EPITAXY, Journal of crystal growth, 148(3), 1995, pp. 211-218

Authors: DRIAD R DUCHENOIS AM LEROUX G ZERGUINE D ALEXANDRE F BENCHIMOL JL LEGAY P LAUNAY P

Citation: R. Driad et al., FULLY PLANAR ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING CHEMICAL BEAM EPITAXY SELECTIVE GROWTH/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 261-263

Authors: DRIAD R DUCHENOIS AM ZERGUINE D ALEXANDRE F LEGAY P LAUNAY P

Citation: R. Driad et al., FULLY-PLANAR ALGAAS GAAS HBTS ACHIEVED BY SELECTIVE CBE REGROWTH/, IEEE electron device letters, 15(11), 1994, pp. 480-481

Authors: ALEXANDRE F ZERGUINE D LAUNAY P BENCHIMOL JL BERZ M SERMAGE B KOMATITSCH D JUHEL M

Citation: F. Alexandre et al., QUASI-PLANAR GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR DEVICE ENTIRELY GROWN BY CHEMICAL BEAM EPITAXY, Journal of crystal growth, 136(1-4), 1994, pp. 235-240

Authors: ALEXANDRE F ZERGUINE D LAUNAY P BENCHIMOL JL ETRILLARD J

Citation: F. Alexandre et al., CBE SELECTIVE EMBEDDED GROWTH FOR QUASI-PLANAR GAAS HBT APPLICATION, Journal of crystal growth, 127(1-4), 1993, pp. 221-225

Authors: ZERGUINE D LAUNAY P ALEXANDRE F BENCHIMOL JL ETRILLARD J

Citation: D. Zerguine et al., HIGH-FREQUENCY QUASIPLANAR GAINP GAAS HBT WITH CBE SELECTIVE COLLECTOR CONTACT REGROWTH/, Electronics Letters, 29(15), 1993, pp. 1349-1350