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Citation: N. Zurauskiene et A. Dargys, DISSIPATIVE ELECTRON-TUNNELING FROM SHALLOW DONORS IN GE, Physica scripta. T, 57(3), 1998, pp. 472-475

Authors: ZURAUSKIENE N DARGYS A

Citation: N. Zurauskiene et A. Dargys, ACOUSTIC-PHONON ACTIVATED AND ASSISTED TUNNELING IN GE-SB,P, Acta Physica Polonica. A, 90(5), 1996, pp. 993-996

Authors: DARGYS A ZURAUSKIENE N

Citation: A. Dargys et N. Zurauskiene, DISSIPATIVE ELECTRON-TUNNELING FROM THE PHOSPHORUS GROUND-LEVEL TO THE CONDUCTION-BAND OF SILICON, Journal of applied physics, 78(7), 1995, pp. 4802-4804

Authors: DARGYS A ZURAUSKAS S ZURAUSKIENE N

Citation: A. Dargys et al., FIELD-IONIZATION OF SHALLOW ACCEPTORS, Acta Physica Polonica. A, 84(4), 1993, pp. 629-632