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Results: 1-12 |
Results: 12
HYDROTHERMAL BEHAVIOR OF DIAMOND
Authors: GOGOTSI Y KRAFT T NICKEL KG ZVANUT ME
Citation: Y. Gogotsi et al., HYDROTHERMAL BEHAVIOR OF DIAMOND, DIAMOND AND RELATED MATERIALS, 7(10), 1998, pp. 1459-1465
NEAR-INTERFACE TRAPPED CHARGE-INDUCED BY FOWLER-NORDHEIM INJECTION INHYDROGEN OR ARGON ANNEALED MOS CAPACITORS
Authors: LIN H ZVANUT ME
Citation: H. Lin et Me. Zvanut, NEAR-INTERFACE TRAPPED CHARGE-INDUCED BY FOWLER-NORDHEIM INJECTION INHYDROGEN OR ARGON ANNEALED MOS CAPACITORS, Journal of electronic materials, 27(7), 1998, pp. 838-841
PROPERTIES OF E-DELTA CENTER IN MICROELECTRONIC GRADE OXIDE-FILMS
Authors: ZVANUT ME MACFARLANE PJ
Citation: Me. Zvanut et Pj. Macfarlane, PROPERTIES OF E-DELTA CENTER IN MICROELECTRONIC GRADE OXIDE-FILMS, Microelectronic engineering, 36(1-4), 1997, pp. 197-200
THE INTERACTION OF H2O WITH AN ELECTRON-PARAMAGNETIC-RESONANCE CENTERIN OXIDIZED, HEAT-TREATED SIC
Authors: MACFARLANE PJ ZVANUT ME
Citation: Pj. Macfarlane et Me. Zvanut, THE INTERACTION OF H2O WITH AN ELECTRON-PARAMAGNETIC-RESONANCE CENTERIN OXIDIZED, HEAT-TREATED SIC, Applied physics letters, 71(15), 1997, pp. 2148-2150
PRODUCTION OF E(DELTA)(') CENTER INDUCED BY DRY HEAT-TREATMENT OF NONBURIED SIO2-FILMS
Authors: ZVANUT ME CHEN TL
Citation: Me. Zvanut et Tl. Chen, PRODUCTION OF E(DELTA)(') CENTER INDUCED BY DRY HEAT-TREATMENT OF NONBURIED SIO2-FILMS, Applied physics letters, 69(1), 1996, pp. 28-30
G-TENSOR FOR SUBSTITUTIONAL NITROGEN IN DIAMOND (VOL 49, PG 15392, 1994)
Authors: ZHANG SG KE SC ZVANUT ME TOHVER HT VOHRA YK
Citation: Sg. Zhang et al., G-TENSOR FOR SUBSTITUTIONAL NITROGEN IN DIAMOND (VOL 49, PG 15392, 1994), Physical review. B, Condensed matter, 51(13), 1995, pp. 8688-8688
GENERATION OF THERMALLY-INDUCED DEFECTS IN BURIED SIO2-FILMS
Authors: ZVANUT ME CHEN TL STAHLBUSH RE STEIGENVALT ES BROWN GA
Citation: Me. Zvanut et al., GENERATION OF THERMALLY-INDUCED DEFECTS IN BURIED SIO2-FILMS, Journal of applied physics, 77(9), 1995, pp. 4329-4333
G-TENSOR FOR SUBSTITUTIONAL NITROGEN IN DIAMOND
Authors: ZHANG SG KE SC ZVANUT ME TOHVER HT VOHRA YK
Citation: Sg. Zhang et al., G-TENSOR FOR SUBSTITUTIONAL NITROGEN IN DIAMOND, Physical review. B, Condensed matter, 49(21), 1994, pp. 15392-15395
EFFECT OF SUPPLEMENTAL O-IMPLANTATION ON THE RADIATION-INDUCED HOLE TRAPS IN SIMOX BURIED OXIDES
Authors: ZVANUT ME BENEFIELD C HUGHES HL
Citation: Me. Zvanut et al., EFFECT OF SUPPLEMENTAL O-IMPLANTATION ON THE RADIATION-INDUCED HOLE TRAPS IN SIMOX BURIED OXIDES, IEEE transactions on nuclear science, 41(6), 1994, pp. 2284-2290
NITROGEN IN THE ISOTOPICALLY ENRICHED C-12 DIAMOND
Authors: ZHANG SG ZVANUT ME VOHRA YK VAGARALI SS
Citation: Sg. Zhang et al., NITROGEN IN THE ISOTOPICALLY ENRICHED C-12 DIAMOND, Applied physics letters, 65(23), 1994, pp. 2951-2957
IDENTIFICATION OF PHOSPHORUS IN DIAMOND THIN-FILMS USING ELECTRON-PARAMAGNETIC-RESONANCE SPECTROSCOPY
Authors: ZVANUT ME CARLOS WE FREITAS JA JAMISON KD HELLMER RP
Citation: Me. Zvanut et al., IDENTIFICATION OF PHOSPHORUS IN DIAMOND THIN-FILMS USING ELECTRON-PARAMAGNETIC-RESONANCE SPECTROSCOPY, Applied physics letters, 65(18), 1994, pp. 2287-2289
ATOMIC-STRUCTURE OF GE-RELATED POINT-DEFECTS IN GE-INCORPORATED OXIDE-FILMS
Authors: ZVANUT ME CARLOS WE PAINE DC CARAGIANIS C
Citation: Me. Zvanut et al., ATOMIC-STRUCTURE OF GE-RELATED POINT-DEFECTS IN GE-INCORPORATED OXIDE-FILMS, Applied physics letters, 63(22), 1993, pp. 3049-3051
Risultati: 1-12 |