Citation: H. Lin et Me. Zvanut, NEAR-INTERFACE TRAPPED CHARGE-INDUCED BY FOWLER-NORDHEIM INJECTION INHYDROGEN OR ARGON ANNEALED MOS CAPACITORS, Journal of electronic materials, 27(7), 1998, pp. 838-841
Citation: Me. Zvanut et Pj. Macfarlane, PROPERTIES OF E-DELTA CENTER IN MICROELECTRONIC GRADE OXIDE-FILMS, Microelectronic engineering, 36(1-4), 1997, pp. 197-200
Citation: Pj. Macfarlane et Me. Zvanut, THE INTERACTION OF H2O WITH AN ELECTRON-PARAMAGNETIC-RESONANCE CENTERIN OXIDIZED, HEAT-TREATED SIC, Applied physics letters, 71(15), 1997, pp. 2148-2150
Citation: Me. Zvanut et Tl. Chen, PRODUCTION OF E(DELTA)(') CENTER INDUCED BY DRY HEAT-TREATMENT OF NONBURIED SIO2-FILMS, Applied physics letters, 69(1), 1996, pp. 28-30
Citation: Me. Zvanut et al., EFFECT OF SUPPLEMENTAL O-IMPLANTATION ON THE RADIATION-INDUCED HOLE TRAPS IN SIMOX BURIED OXIDES, IEEE transactions on nuclear science, 41(6), 1994, pp. 2284-2290
Authors:
ZVANUT ME
CARLOS WE
FREITAS JA
JAMISON KD
HELLMER RP
Citation: Me. Zvanut et al., IDENTIFICATION OF PHOSPHORUS IN DIAMOND THIN-FILMS USING ELECTRON-PARAMAGNETIC-RESONANCE SPECTROSCOPY, Applied physics letters, 65(18), 1994, pp. 2287-2289
Authors:
ZVANUT ME
CARLOS WE
PAINE DC
CARAGIANIS C
Citation: Me. Zvanut et al., ATOMIC-STRUCTURE OF GE-RELATED POINT-DEFECTS IN GE-INCORPORATED OXIDE-FILMS, Applied physics letters, 63(22), 1993, pp. 3049-3051