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Results:
1-12
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Results: 12
Authors:
Zdansky, K
Zavadil, J
Prochazkova, O
Gladkov, P
Citation: K. Zdansky et al., P-type InP grows by liquid phase epitaxy with rare earths: not intentionalGe acceptor doping, MAT SCI E B, 80(1-3), 2001, pp. 10-13
Authors:
Prochazkova, O
Zavadil, J
Zdansky, K
Citation: O. Prochazkova et al., LPE InP layers grown in the presence of rare-earth elements, MAT SCI E B, 80(1-3), 2001, pp. 14-17
Authors:
Prochazkova, O
Zavadil, J
Zdansky, K
Citation: O. Prochazkova et al., Role of f-elements in the growth of InP layers for radiation detectors, CRYST RES T, 36(8-10), 2001, pp. 979-987
Authors:
Zdansky, K
Pekarek, L
Kacerovsky, P
Citation: K. Zdansky et al., Temperature change of the conductivity type in semi-insulating InP double doped with Zn and Fe, SEMIC SCI T, 15(3), 2000, pp. 297-300
Authors:
Vackova, S
Zdansky, K
Vacek, K
Scherback, L
Feychuk, P
Ilaschouk, M
Citation: S. Vackova et al., Phonon drag effect in Cd1-xZnxTe in dependence on x: Minimum at x=0.04, PHYS ST S-A, 177(1), 2000, pp. 263-265
Authors:
Zdansky, K
Citation: K. Zdansky, Quasistatic capacitance-voltage characteristics of plane-parallel structures: Metal/semi-insulator/metal, J APPL PHYS, 88(4), 2000, pp. 2024-2029
Authors:
Novotny, J
Prochazkova, O
Zdansky, K
Zavadil, J
Srobar, F
Citation: J. Novotny et al., Preparation and characterization of n- and p-type ytterbium doped InP epitaxial layers, MAT SCI E B, 66(1-3), 1999, pp. 58-62
Authors:
Vackova, S
Zdansky, K
Vacek, K
Scherback, L
Feichouk, P
Ilaschouk, M
Citation: S. Vackova et al., Conductivity change of Au/p-CdTe/Au as a function of the temperature gradient, J CRYST GR, 197(3), 1999, pp. 599-602
Authors:
Novotny, J
Prochazkova, O
Zdansky, K
Zavadil, J
Citation: J. Novotny et al., Preparation and properties of Er and Yb doped InP-based semiconductor compounds, CZEC J PHYS, 49(5), 1999, pp. 757-763
Authors:
Zavadil, J
Zdansky, K
Prochazkova, O
Citation: J. Zavadil et al., Electrooptical properties of InP epitaxial layers grown with rare-earth admixture, CZEC J PHYS, 49(5), 1999, pp. 765-774
Authors:
Nohavica, D
Gladkov, P
Zdansky, K
Citation: D. Nohavica et al., Preparation and properties of thick not intentionally doped GaInP(As)/GaAslayers for optoelectronic applications, CZEC J PHYS, 49(5), 1999, pp. 797-804
Authors:
Zdansky, K
Hawkins, ID
Citation: K. Zdansky et Id. Hawkins, Slow decay of photoconductivity caused by tin-related DX centers in AlGaAs, CZEC J PHYS, 49(5), 1999, pp. 813-821
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