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Results: 1-25/32
Authors:
Yuan, J
Xu, JJ
Niu, WQ
Zhao, QX
Yan, HS
Cheng, XH
He, BL
Citation: J. Yuan et al., Affinity adsorbents with D-alanine and D,L-alanine as ligands for vancomycin group antibiotics, J LIQ CHR R, 24(17), 2001, pp. 2635-2645
Authors:
Li, WD
Zhao, QX
Li, RX
Citation: Wd. Li et al., A model of turbulent-laminar gas-liquid stratified flow, CHIN J CH E, 9(2), 2001, pp. 129-132
Authors:
Xie, QJ
Zhang, YY
Xiang, CH
Tang, JX
Li, YL
Zhao, QX
Yao, SZ
Citation: Qj. Xie et al., A comparative study on the viscoelasticity and morphology of polyaniline films galvanostatically grown on bare and 4-aminothiophenol-modified gold electrodes using an electrochemical quartz crystal impedance system and SEM, ANAL SCI, 17(5), 2001, pp. 613-620
Authors:
Lu, W
Liu, XQ
Li, ZF
Shen, SC
Zhao, QX
Fu, Y
Willander, M
Tan, HH
Jagadish, C
Zou, J
Cockayne, DJH
Citation: W. Lu et al., Carrier transfer between V-grooved quantum wire and vertical quantum well, PHYS LETT A, 280(1-2), 2001, pp. 77-80
Authors:
Zhao, QX
Wongmanerod, S
Willander, M
Holtz, PO
Wang, SM
Sadeghi, M
Citation: Qx. Zhao et al., Electronic structure of beryllium acceptors confined in GaAs/AlxGa1-xAs quantum wells - art. no. 195317, PHYS REV B, 6319(19), 2001, pp. 5317
Authors:
Zhao, QX
Willander, M
Bergman, JP
Holtz, PO
Lu, W
Shen, SC
Citation: Qx. Zhao et al., Dynamic properties of radiative recombination in p-type delta-doped layersin GaAs - art. no. 125337, PHYS REV B, 6312(12), 2001, pp. 5337
Authors:
Myrberg, T
Jacob, AP
Nur, O
Zhao, QX
Willander, M
DeBoer, WB
Citation: T. Myrberg et al., Relaxation and photoluminscence of different post-processed Si/Si1-xGex quantum well structures grown by CVD, SOL ST ELEC, 45(11), 2001, pp. 1915-1919
Authors:
Ferdos, F
Sadeghi, M
Zhao, QX
Wang, SM
Larsson, A
Citation: F. Ferdos et al., Optimisation of MBE growth conditions for InAs quantum dots on (001) GaAs for 1.3 mu m luminescence, J CRYST GR, 227, 2001, pp. 1140-1145
Authors:
Jacob, AP
Zhao, QX
Willander, M
Baron, T
Magnea, N
Citation: Ap. Jacob et al., Hydrogen passivation of nitrogen acceptors confined in CdZnTe quantum wellstructures, J APPL PHYS, 90(5), 2001, pp. 2329-2332
Authors:
Zsebok, O
Thordson, JV
Gunnarsson, JR
Zhao, QX
Ilver, L
Andersson, TG
Citation: O. Zsebok et al., The effect of the first GaN monolayer on the nitridation damage of molecular beam epitaxy grown GaN on GaAs(001), J APPL PHYS, 89(7), 2001, pp. 3662-3667
Authors:
Zsebok, O
Thordson, JV
Zhao, QX
Andersson, TG
Citation: O. Zsebok et al., Effects of small amounts of Al in GaN grown on sapphire (0001) by molecular beam epitaxy, J APPL PHYS, 89(3), 2001, pp. 1954-1958
Authors:
Zsebok, O
Thordson, JV
Zhao, QX
Sodervall, U
Ilver, L
Andersson, TG
Citation: O. Zsebok et al., The effect of Al in plasma-assisted MBE-grown GaN, MRS I J N S, 5, 2000, pp. NIL_185-NIL_190
Authors:
Nawaz, M
Mellberg, A
Persson, SHM
Zirath, H
Zhao, QX
Sodervall, U
Willander, M
Citation: M. Nawaz et al., Characterization and performance of MOCVD grown 0.14-mu m InP-HEMTs for low voltage applications, MAT SCI E B, 74(1-3), 2000, pp. 137-142
Authors:
Yan, HS
Zhao, QX
Yuan, J
Cheng, XH
He, BL
Citation: Hs. Yan et al., Affinity adsorbents for the vancomycin group of antibiotics, BIOT APP B, 31, 2000, pp. 15-20
Authors:
Zhao, QX
Poole, K
Citation: Qx. Zhao et K. Poole, A second tonB gene in Pseudomonas aeruginosa is linked to the exbB and exbD genes, FEMS MICROB, 184(1), 2000, pp. 127-132
Authors:
Zhao, QX
Willander, M
Citation: Qx. Zhao et M. Willander, Possible terahertz laser structures based on population inversion induced by resonant states in semiconductors, PHYS LETT A, 270(5), 2000, pp. 273-277
Authors:
Nawaz, M
Miranda, JM
Sakalas, P
Wang, SM
Zhao, QX
Willander, M
Zirath, H
Citation: M. Nawaz et al., Design, processing and characterization of delta-doped channel AlGaAs/InGaAs/GaAs HFETs, SEMIC SCI T, 15(7), 2000, pp. 728-735
Authors:
Zhao, QX
Yan, HS
Cheng, XH
He, BL
Citation: Qx. Zhao et al., Synthesis and characterization of affinity adsorbents for N-demethylvancomycin, CHEM J CH U, 21(7), 2000, pp. 1134-1137
Authors:
Zsebok, O
Thordson, JV
Zhao, QX
Andersson, TG
Citation: O. Zsebok et al., Influence of N/Ga-flux ratio on optical properties and surface morphology of GaN grown on sapphire(0001) by MBE, APPL SURF S, 166(1-4), 2000, pp. 423-427
Authors:
Zhao, QX
Karlsteen, M
Willander, M
Wang, SM
Sadeghi, M
Citation: Qx. Zhao et al., Effects of indium concentration on the electronic structures of Be accepters confined in InxGa1-xAs/Al0.3Ga0.7As quantum-well structures, PHYS REV B, 62(8), 2000, pp. 5055-5058
Authors:
Zhao, QX
Wongmanerod, S
Willander, M
Holtz, PO
Selvig, E
Fimland, BO
Citation: Qx. Zhao et al., Effects of monolayer AlAs insertion in modulation doped GaAs/AlxGa1-xAs quantum-well structures, PHYS REV B, 62(16), 2000, pp. 10984-10989
Authors:
Yun, F
Hinds, BJ
Hatatani, S
Oda, S
Zhao, QX
Willander, M
Citation: F. Yun et al., Study of structural and optical properties of nanocrystalline silicon embedded in SiO2, THIN SOL FI, 375(1-2), 2000, pp. 137-141
Authors:
Zhao, QX
Zsebok, O
Sodervall, U
Karlsteen, M
Willander, M
Liu, XQ
Chen, YD
Lu, W
Shen, SC
Citation: Qx. Zhao et al., GaAs film deposited on SrTiO3 substrate by molecular beam epitaxy, J CRYST GR, 208(1-4), 2000, pp. 117-122
Authors:
Zhao, QX
Willander, M
Lu, W
Liu, XQ
Shen, SC
Tan, HH
Jagadish, C
Zou, J
Cockayne, DJH
Citation: Qx. Zhao et al., Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantumwires, J APPL PHYS, 88(5), 2000, pp. 2519-2522
Authors:
Chen, YD
Liu, XQ
Lu, W
Shi, GL
Shen, XC
Zhao, QX
Willander, M
Citation: Yd. Chen et al., Study of the inter-band transition of the GaAs single-crystal film on SrTiO3 substrate by MBE, ACT PHY C E, 48(9), 1999, pp. 1718-1722