Authors: Tian, Y Zhang, BL Zhou, TM Jiang, H Jin, YX

Citation: Y. Tian et al., Theoretical analysis of the detectivity in N-p and P-n GaSb/GaInAsSb infrared photodetectors, IEEE DEVICE, 47(3), 2000, pp. 544-552

Authors: Tian, Y Zhou, TM Zhang, BL Jiang, H Jin, YX

Citation: Y. Tian et al., Effect of material parameters on the quantum efficiency of GaInAsSb detectors, SOL ST ELEC, 43(3), 1999, pp. 625-631

Authors: Tian, Y Zhang, BL Zhou, TM Jiang, H Jin, YX

Citation: Y. Tian et al., Numerical analysis of the detectivity in n(+)-n-p and p(+)-p-n GaInAsSb infrared detectors, SOL ST ELEC, 43(10), 1999, pp. 1879-1891

Authors: Tian, Y Zhang, BL Zhou, TM Jiang, H Jin, JX

Citation: Y. Tian et al., The analysis of the performance for P-p-n and N-n-p hetero- and homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 photodetectors, PHYS ST S-A, 174(2), 1999, pp. 413-430

Authors: Tian, YA Zhou, TM Zhang, BL Jiang, H Jin, YX

Citation: Ya. Tian et al., The effect of auger mechanism on n(+)-p GaInAsSb infrared photovoltaic detectors, IEEE DEVICE, 46(4), 1999, pp. 656-660

Authors: Tian, YA Zhou, TM Zhang, BL Jin, YX Jiang, H

Citation: Ya. Tian et al., Analysis of the R(0)A product and detectivity in a GaInAsSb infrared photovoltaic detector, J PHYS D, 31(22), 1998, pp. 3291-3297