Authors:
Besser, PR
Zschech, E
Blum, W
Winter, D
Ortega, R
Rose, S
Herrick, M
Gall, M
Thrasher, S
Tiner, M
Baker, B
Braeckelmann, G
Zhao, L
Simpson, C
Capasso, C
Kawasaki, H
Weitzman, E
Citation: Pr. Besser et al., Microstructural characterization of inlaid copper interconnect lines, J ELEC MAT, 30(4), 2001, pp. 320-330
Citation: E. Zschech et al., Effect of copper line geometry and process parameters on interconnect microstructure and degradation processes, Z METALLKUN, 92(7), 2001, pp. 803-809
Authors:
Zschech, E
Engelmann, HJ
Saage, H
de Robillard, Q
Stegmann, H
Citation: E. Zschech et al., Characterization of layer stacks in microelectronic products: Challenges to sample preparation and TEM analysis, PRAKT METAL, 38(8), 2001, pp. 442-453
Citation: Hj. Engelmann et al., Application of analytical TEM for failure analysis of semiconductor devicestructures, MICROEL REL, 40(8-10), 2000, pp. 1747-1751
Citation: Tem. Staab et al., Positron lifetime measurements for characterization of nano-structural changes in the age hardenable AlCuMg 2024 alloy, J MATER SCI, 35(18), 2000, pp. 4667-4672
Authors:
Hietschold, M
Muller, F
Muller, AD
Engelmann, HJ
Zschech, E
Citation: M. Hietschold et al., Investigations of local electrical surface characteristics by dynamical scanning force microscopy, FRESEN J AN, 365(1-3), 1999, pp. 96-98
Authors:
Iltgen, K
Zschech, E
Ghatak-Roy, A
Hossain, T
Citation: K. Iltgen et al., Future in-fab applications of total reflection X-ray fluorescence spectrometry for the semiconductor industry, SPECT ACT B, 54(10), 1999, pp. 1393-1398