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Results: 1-9 |
Results: 9
Characterisation of nitride thin films by electron backscattered diffraction
Authors: Trager-Cowan, C Manson-Smith, SK Cowan, DA Sweeney, F McColl, D Mohammed, A Timm, R Middleton, PG O'Donnell, KP Zubia, D Hersee, SD
Citation: C. Trager-cowan et al., Characterisation of nitride thin films by electron backscattered diffraction, MAT SCI E B, 82(1-3), 2001, pp. 19-21
MOCVD growth of InNxAs1-x on GaAs using dimethylhydrazine
Authors: El-Emawy, AA Cao, HJ Zhmayev, E Lee, JH Zubia, D Osinski, M
Citation: Aa. El-emawy et al., MOCVD growth of InNxAs1-x on GaAs using dimethylhydrazine, PHYS ST S-B, 228(1), 2001, pp. 263-267
Initial nanoheteroepitaxial growth of GaAs on Si(100) by OMVPE
Authors: Zubia, D Zhang, S Bommena, R Sun, X Brueck, SRJ Hersee, SD
Citation: D. Zubia et al., Initial nanoheteroepitaxial growth of GaAs on Si(100) by OMVPE, J ELEC MAT, 30(7), 2001, pp. 812-816
Probing nitride thin films in 3-dimensions using a variable energy electron beam
Authors: Trager-Cowan, C McColl, D Sweeney, F Grimson, STF Treguer, JF Mohammed, A Middleton, PG Manson-Smith, SK O'Donnell, KP Van der Stricht, W Moerman, I Demeester, P Wu, MF Vantomme, A Zubia, D Hersee, SD
Citation: C. Trager-cowan et al., Probing nitride thin films in 3-dimensions using a variable energy electron beam, MRS I J N S, 5, 2000, pp. NIL_347-NIL_352
Nanoheteroepitaxy: Nanofabrication route to improved epitaxial growth
Authors: Zubia, D Zaidi, SH Hersee, SD Brueck, SRJ
Citation: D. Zubia et al., Nanoheteroepitaxy: Nanofabrication route to improved epitaxial growth, J VAC SCI B, 18(6), 2000, pp. 3514-3520
Chemical vapor deposition of B12As2 thin films on 6H-SiC
Authors: Wang, RH Zubia, D O'Neil, T Emin, D Aselage, T Zhang, W Hersee, SD
Citation: Rh. Wang et al., Chemical vapor deposition of B12As2 thin films on 6H-SiC, J ELEC MAT, 29(11), 2000, pp. 1304-1306
Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy
Authors: Zubia, D Zaidi, SH Brueck, SRJ Hersee, SD
Citation: D. Zubia et al., Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy, APPL PHYS L, 76(7), 2000, pp. 858-860
GaN epilayers on misoriented substrates
Authors: Trager-Cowan, C McArthur, S Middleton, PG O'Donnell, KP Zubia, D Hersee, SD
Citation: C. Trager-cowan et al., GaN epilayers on misoriented substrates, MAT SCI E B, 59(1-3), 1999, pp. 235-238
Nanoheteroepitaxy: The application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials
Authors: Zubia, D Hersee, SD
Citation: D. Zubia et Sd. Hersee, Nanoheteroepitaxy: The application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials, J APPL PHYS, 85(9), 1999, pp. 6492-6496
Risultati: 1-9 |