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Results: 18
X-ray radiation response of epitaxial and nonepitaxial n-6H-SiC metal-oxide-semiconductor capacitors
Authors:
de Vasconcelos, EA
da Silva, EF
Katsube, T
Yoshida, S
Nishioka, Y
Citation: Ea. De Vasconcelos et al., X-ray radiation response of epitaxial and nonepitaxial n-6H-SiC metal-oxide-semiconductor capacitors, JPN J A P 1, 40(4B), 2001, pp. 2987-2990
Authors:
Gameiro, CG
da Silva, EF
Alves, S
de Sa, GF
Santa-Cruz, PA
Citation: Cg. Gameiro et al., Lanthanide complexes dispersed in enamel: a promising new material for photonic devices, J ALLOY COM, 323, 2001, pp. 820-823
Authors:
de Sousa, JS
Freire, VN
Farias, GA
Landim, RR
da Silva, EF
Citation: Js. De Sousa et al., Feasibility of red light emission through exciton confinement in Si/SiO2 quantum wires, J KOR PHYS, 39(3), 2001, pp. 473-476
Authors:
Alves, C
da Silva, EF
Martinelli, AE
Citation: C. Alves et al., Effect of workpiece geometry on the uniformity of nitrided layers, SURF COAT, 139(1), 2001, pp. 1-5
Authors:
Scalon, SDPQ
Scalon, H
Sandre, TA
da Silva, EF
Krewer, ECD
Citation: Sdpq. Scalon et al., Quality evaluation and sugar beet postharvest conservation under modified atmosphere, BRAZ ARCH B, 43(2), 2000, pp. 181-184
Authors:
da Silva, EF
de Vasconcelos, EA
Stosic, BD
de Sousa, JS
Farias, GA
Freire, VN
Citation: Ef. Da Silva et al., Dynamics of SiO2/SiOx/Si multilayer growth and interfacial effects on silicon quantum well confinement properties, MAT SCI E B, 74(1-3), 2000, pp. 188-192
Authors:
de Vasconcelos, EA
da Silva, EF
Khoury, HJ
Freire, VN
Citation: Ea. De Vasconcelos et al., Effect of ageing on x-ray induced dopant passivation in MOS capacitors, SEMIC SCI T, 15(8), 2000, pp. 794-798
Authors:
de Sousa, JS
Wang, H
Farias, GA
Freire, VN
da Silva, EF
Citation: Js. De Sousa et al., Strong exciton energy blue shift in annealed Si/SiO2 single quantum wells, APPL SURF S, 166(1-4), 2000, pp. 469-474
Authors:
da Silva, EF
de Vasconcelos, EA
Freire, VN
Citation: Ef. Da Silva et al., Time evolution of SiO2/Si interface defects and dopant passivation in MOS capacitors, MICROEL ENG, 51-2, 2000, pp. 567-574
Authors:
Caetano, EWS
Bezerra, EF
Freire, VN
da Costa, JAP
da Silva, EF
Citation: Ews. Caetano et al., Ultrafast electron drift velocity overshoot in 3C-SiC, SOL ST COMM, 113(9), 2000, pp. 539-542
Authors:
da Silva, EF
Reha-Krantz, LJ
Citation: Ef. Da Silva et Lj. Reha-krantz, Dinucleotide repeat expansion catalyzed by bacteriophage T4 DNA polymerasein vitro, J BIOL CHEM, 275(40), 2000, pp. 31528-31535
Authors:
de Sa, GF
Malta, OL
Donega, CD
Simas, AM
Longo, RL
Santa-Cruz, PA
da Silva, EF
Citation: Gf. De Sa et al., Spectroscopic properties and design of highly luminescent lanthanide coordination complexes, COORD CH RE, 196, 2000, pp. 165-195
Authors:
de Sousa, JS
Farias, GA
Freire, VN
da Silva, EF
Citation: Js. De Sousa et al., Interface-related restriction to potential depth estimates for single Si/SiO2 quantum wells, J PHYS-COND, 11(8), 1999, pp. 1927-1934
Authors:
Sousa, JS
Farias, GA
Freire, VN
da Silva, EF
Citation: Js. Sousa et al., Blue and red Stark shifts in single Si/SiO2 quantum wells, SUPERLATT M, 25(1-2), 1999, pp. 377-381
Authors:
Bezerra, EF
Caetano, EWS
Freire, VN
da Silva, EF
da Costa, JAP
Citation: Ef. Bezerra et al., High-temperature effects on the velocity overshoot of hot electrons in 6H-and 3C-SiC, SEMIC SCI T, 14(11), 1999, pp. 1007-1011
Authors:
Bezerra, EF
Caetano, EWS
Freire, VN
da Silva, EF
da Costa, JAP
Citation: Ef. Bezerra et al., High temperature behavior of subpicosecond electron transport transient in3C-and 6H-SiC, BRAZ J PHYS, 29(4), 1999, pp. 785-789
Authors:
de Sousa, JS
Farias, GA
Freire, VN
da Silva, EF
Citation: Js. De Sousa et al., Strong interface effects in graded SiO2/Si/SiO2 quantum wells, J APPL PHYS, 84(9), 1998, pp. 5369-5371
Authors:
Pimentel, LCG
da Silva, EF
Citation: Lcg. Pimentel et Ef. Da Silva, Laminar and turbulent channel flow, INTEGRAL TRANSFORM METHOD IN THERMAL AND FLUIDS SCIENCES AND ENGINEERING, 1998, pp. 215-235
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