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Results: 101-125/2122
Authors:
DAGOSTINO S
EMMA F
PAOLONI C
Citation: S. Dagostino et al., ACCURATE ANALYSIS OF HELIX SLOW-WAVE STRUCTURES, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1605-1613
Authors:
LIANG YC
SAMUDRA GS
HOR VSS
Citation: Yc. Liang et al., DESIGN OF INTEGRATED CURRENT SENSOR FOR LATERAL IGBT POWER DEVICES, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1614-1616
Authors:
VATANNIA S
SCHIANO JL
GILDENBLAT G
GINSBERG MD
Citation: S. Vatannia et al., RESONANT-TUNNELING DISPLACEMENT TRANSDUCER, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1616-1619
Authors:
MARQUES FC
Citation: Fc. Marques, SPRAYED SNO2 ANTIREFLECTION COATING ON TEXTURED SILICON SURFACE FOR SOLAR-CELL APPLICATIONS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1619-1622
Authors:
WOOD J
MORTON CG
Citation: J. Wood et Cg. Morton, AN ANALYSIS OF THE EFFECTIVE POSITION OF THE 2-DIMENSIONAL ELECTRON-GAS IN THE CHANNEL OF MODFET EPITAXIAL LAYER STRUCTURES, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1622-1624
Authors:
HAN KM
SAH CT
Citation: Km. Han et Ct. Sah, POSITIVE OXIDE CHARGE FROM HOT HOLE INJECTION DURING CHANNEL-HOT-ELECTRON STRESS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1624-1627
Authors:
SINGH R
SNOWDEN CM
Citation: R. Singh et Cm. Snowden, A QUASI-2-DIMENSIONAL HEMT MODEL FOR DC AND MICROWAVE SIMULATION, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1165-1169
Authors:
ANWAR AFM
WEBSTER RT
Citation: Afm. Anwar et Rt. Webster, ON THE POSSIBLE EFFECTS OF ALGAASSB GROWTH-PARAMETERS ON THE 2-DEG CONCENTRATION IN ALGAASSB INGAAS/ALGAASSB QWS/, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1170-1175
Authors:
TANIMOTO T
OHBU I
TANAKA S
KAWAI A
KUDO M
TERANO A
NAKAMURA T
Citation: T. Tanimoto et al., SINGLE-VOLTAGE-SUPPLY HIGHLY EFFICIENT E D DUAL-GATE PSEUDOMORPHIC DOUBLE-HETERO HEMTS WITH PLATINUM BURIED GATES/, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1176-1182
Authors:
WADA S
FURUHATA N
TOKUSHIMA M
FUKAISHI M
HIDA H
MAEDA T
Citation: S. Wada et al., 0.1-MU-M P(-GAAS GATE HJFETS FABRICATED USING 2-STEP DRY-ETCHING AND SELECTIVE MOMBE GROWTH TECHNIQUES()), I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1183-1189
Authors:
KIM CW
GOTO N
HONJO K
Citation: Cw. Kim et al., THERMAL-BEHAVIOR DEPENDING ON EMITTER FINGER AND SUBSTRATE CONFIGURATIONS IN POWER HETEROJUNCTION BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1190-1195
Authors:
IWAI T
OHARA S
YAMADA H
YAMAGUCHI Y
IMANISHI K
JOSHIN K
Citation: T. Iwai et al., HIGH-EFFICIENCY AND HIGH LINEARITY INGAP GAAS HBT POWER-AMPLIFIERS - MATCHING TECHNIQUES OF SOURCE AND LOAD IMPEDANCE TO IMPROVE PHASE-DISTORTION AND LINEARITY/, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1196-1200
Authors:
VALTUENA JF
GARRIDO JA
IZPURA JI
Citation: Jf. Valtuena et al., 1 F NOISE IN INGAAS/GAAS LINEAR GRADED BUFFER LAYERS/, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1201-1206
Authors:
FLITCROFT RM
DAVID JPR
HOUSTON PA
BUTTON CC
Citation: Rm. Flitcroft et al., AVALANCHE MULTIPLICATION IN GAINP GAAS SINGLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1207-1212
Authors:
LIU MH
WANG YH
HOUNG MP
Citation: Mh. Liu et al., EFFECTS OF INELASTIC-SCATTERING ON INTERBAND TUNNELING IN GASB ALSB/INAS/GASB/ALSB/INAS BROKEN-GAP INTERBAND TUNNELING STRUCTURES/, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1213-1218
Authors:
DURAN HC
REN L
BECK M
PY MA
ILEGEMS M
BACHTOLD W
Citation: Hc. Duran et al., LOW-FREQUENCY NOISE PROPERTIES OF SELECTIVELY DRY-ETCHED INP HEMTS, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1219-1225
Authors:
TIAN SY
MORRIS MF
MORRIS SJ
OBRADOVIC B
WANG G
TASCH AF
SNELL CM
Citation: Sy. Tian et al., A DETAILED PHYSICAL MODEL FOR ION IMPLANT INDUCED DAMAGE IN SILICON, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1226-1238
Authors:
JAMASB S
COLLINS SD
SMITH RL
Citation: S. Jamasb et al., A PHYSICAL MODEL FOR THRESHOLD VOLTAGE INSTABILITY IN SI3N4-GATE H-SENSITIVE FETS (PH ISFETS)(), I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1239-1245
Authors:
CHATTERJEE A
RODDER M
CHEN IC
Citation: A. Chatterjee et al., A TRANSISTOR PERFORMANCE FIGURE-OF-MERIT INCLUDING THE EFFECT OF GATERESISTANCE AND ITS APPLICATION TO SCALING TO SUB-0.25-MU-M CMOS LOGICTECHNOLOGIES, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1246-1252
Authors:
YU B
JU DH
LEE WC
KEPLER N
KING TJ
HU CM
Citation: B. Yu et al., GATE ENGINEERING FOR DEEP-SUBMICRON CMOS TRANSISTORS, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1253-1262
Authors:
JANIK T
MAJKUSIAK B
Citation: T. Janik et B. Majkusiak, ANALYSIS OF THE MOS-TRANSISTOR BASED ON THE SELF-CONSISTENT SOLUTION TO THE SCHRODINGER AND POISSON EQUATIONS AND ON THE LOCAL MOBILITY MODEL, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1263-1271
Authors:
CHOI KY
LEE JW
HAN MK
Citation: Ky. Choi et al., GATE-OVERLAPPED LIGHTLY DOPED DRAIN POLY-SI THIN-FILM TRANSISTORS FORLARGE AREA AMLCD, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1272-1279
Authors:
LIU P
HSIAO TC
WOO JCS
Citation: P. Liu et al., A LOW THERMAL BUDGET SELF-ALIGNED TI SILICIDE TECHNOLOGY USING GERMANIUM IMPLANTATION FOR THIN-FILM SOI MOSFETS, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1280-1286
Authors:
KONDO M
ODA K
OHUE E
SHIMAMOTO H
TANABE M
ONAI T
WASHIO K
Citation: M. Kondo et al., ULTRA-LOW-POWER AND HIGH-SPEED SIGE BASE BIPOLAR-TRANSISTORS FOR WIRELESS TELECOMMUNICATION SYSTEMS, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1287-1294
Authors:
YOSHITOMI T
SAITO M
OHGURO T
ONO M
MOMOSE HS
MORIFUJI E
MORIMOTO T
KATSUMATA Y
IWAI H
Citation: T. Yoshitomi et al., HIGH-PERFORMANCE OF SILICIDED SILICON-SIDEWALL SOURCE AND DRAIN ((SD)-D-4) STRUCTURE, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1295-1299