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Results: 101-125/2294
Authors:
VENDIK OG
VENDIK IB
Citation: Og. Vendik et Ib. Vendik, POWER DEPENDENCE OF HTS DISK-RESONATOR QUALITY FACTOR, IEEE transactions on microwave theory and techniques, 46(6), 1998, pp. 851-856
Authors:
INGRUBER B
PRITZL W
SMELY D
WACHUTKA M
MAGERL G
Citation: B. Ingruber et al., HIGH-EFFICIENCY HARMONIC-CONTROL AMPLIFIER, IEEE transactions on microwave theory and techniques, 46(6), 1998, pp. 857-862
Authors:
DYCZIJEDLINGER R
PENG GH
LEE JF
Citation: R. Dyczijedlinger et al., A FAST VECTOR-POTENTIAL METHOD USING TANGENTIALLY CONTINUOUS VECTOR FINITE-ELEMENTS, IEEE transactions on microwave theory and techniques, 46(6), 1998, pp. 863-868
Authors:
OGUZ U
GUREL L
ARIKAN O
Citation: U. Oguz et al., AN EFFICIENT AND ACCURATE TECHNIQUE FOR THE INCIDENT-WAVE EXCITATIONSIN THE FDTD METHOD, IEEE transactions on microwave theory and techniques, 46(6), 1998, pp. 869-882
Authors:
SHIAO CM
PENG ST
Citation: Cm. Shiao et St. Peng, DISTRIBUTION OF CURRENT-INDUCED ON METAL-STRIP GRATINGS BY PLANE-WAVE, IEEE transactions on microwave theory and techniques, 46(6), 1998, pp. 883-885
Authors:
LUY JF
PONCHAK GE
Citation: Jf. Luy et Ge. Ponchak, INTRODUCTION TO THE SPECIAL ISSUE ON MICROWAVE CIRCUITS ON SILICON SUBSTRATES, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 569-571
Authors:
CRESSLER JD
Citation: Jd. Cressler, SIGE HBT TECHNOLOGY - A NEW CONTENDER FOR SI-BASED RF AND MICROWAVE CIRCUIT APPLICATIONS, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 572-589
Authors:
RUSSER P
Citation: P. Russer, SI AND SIGE MILLIMETER-WAVE INTEGRATED-CIRCUITS, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 590-603
Authors:
BIBER CE
SCHMATZ ML
MORF T
LOTT U
BACHTOLD W
Citation: Ce. Biber et al., A NONLINEAR MICROWAVE MOSFET MODEL FOR SPICE SIMULATORS, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 604-610
Authors:
CHAN YJ
HUANG CH
WENG CC
LIEW BK
Citation: Yj. Chan et al., CHARACTERISTICS OF DEEP-SUBMICROMETER MOSFET AND ITS EMPIRICAL NONLINEAR RF MODEL, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 611-615
Authors:
WARNS C
MENZEL W
SCHUMACHER H
Citation: C. Warns et al., TRANSMISSION-LINES AND PASSIVE ELEMENTS FOR MULTILAYER COPLANAR CIRCUITS ON SILICON, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 616-622
Authors:
YANG SD
HU ZR
BUCHANAN NB
FUSCO VF
STEWART JAC
WU YH
ARMSTRONG BM
ARMSTRONG GA
GAMBLE HS
Citation: Sd. Yang et al., CHARACTERISTICS OF TRENCHED COPLANAR WAVE-GUIDE FOR HIGH-RESISTIVITY SI MMIC APPLICATIONS, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 623-631
Authors:
MILANOVIC V
OZGUR M
DEGROOT DC
JARGON JA
GAITAN M
ZAGHLOUL ME
Citation: V. Milanovic et al., CHARACTERIZATION OF BROAD-BAND TRANSMISSION FOR COPLANAR WAVE-GUIDES ON CMOS SILICON SUBSTRATES, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 632-640
Authors:
WU YH
ARMSTRONG BM
GAMBLE HS
HU ZR
CHEN Q
YANG SD
FUSCO VF
STEWART JAC
Citation: Yh. Wu et al., MICROWAVE PTSI-SI SCHOTTKY-BARRIER-DETECTOR DIODE FABRICATION USING AN IMPLANTED ACTIVE LAYER ON HIGH-RESISTIVITY SILICON SUBSTRATE, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 641-646
Authors:
VANHAAREN B
REGIS M
LLOPIS O
ESCOTTE L
GRUHLE A
MAHNER C
PLANA R
GRAFFEUIL J
Citation: B. Vanhaaren et al., LOW-FREQUENCY NOISE PROPERTIES OF SIGE HBTS AND APPLICATION TO ULTRA-LOW PHASE-NOISE OSCILLATORS, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 647-652
Authors:
ANSLEY WE
CRESSLER JD
RICHEY DM
Citation: We. Ansley et al., BASE-PROFILE OPTIMIZATION FOR MINIMUM NOISE-FIGURE IN ADVANCED UHV CVD SIGE HBTS/, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 653-660
Authors:
GOTZFRIED R
BEISSWANGER F
GERLACH S
SCHUPPEN A
DIETRICH H
SEILER U
BACH KH
ALBERS J
Citation: R. Gotzfried et al., RFICS FOR MOBILE COMMUNICATION-SYSTEMS USING SIGE BIPOLAR TECHNOLOGY, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 661-668
Authors:
STROHM KM
BUECHLER J
KASPER E
Citation: Km. Strohm et al., SIMMWIC RECTENNAS ON HIGH-RESISTIVITY SILICON AND CMOS COMPATIBILITY, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 669-676
Authors:
NISHIKAWA K
TOYODA I
KAMOGAWA K
TOKUMITSU T
Citation: K. Nishikawa et al., 3-DIMENSIONAL SILICON MMICS OPERATING UP TO K-BAND, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 677-684
Authors:
RIEH JS
LU LH
KATEHI PB
BHATTACHARYA P
CROKE ET
PONCHAK GE
ALTEROVITZ SA
Citation: Js. Rieh et al., X-BAND AND KU-BAND AMPLIFIERS BASED ON SI SIGE HBTS AND MICROMACHINEDLUMPED COMPONENTS/, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 685-694
Authors:
BRUCE SPO
RYDBERG A
KIM M
BEISSWANGER FJ
LUY JF
SCHUMACHER H
ERBEN U
WILLANDER M
KARLSTEEN M
Citation: Spo. Bruce et al., DESIGN AND REALIZATION OF A MILLIMETER-WAVE SI SIGE HBT FREQUENCY-MULTIPLIER/, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 695-700
Authors:
WOLLITZER M
BUECHLER J
LUY JF
SIART U
SCHMIDHAMMER E
DETLEFSEN J
ESSLINGER M
Citation: M. Wollitzer et al., MULTIFUNCTIONAL RADAR SENSOR FOR AUTOMOTIVE APPLICATION, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 701-708
Authors:
HEINRICH W
GERDES J
SCHMUCKLE FJ
RHEINFELDER C
STROHM K
Citation: W. Heinrich et al., COPLANAR PASSIVE ELEMENTS ON SI SUBSTRATE FOR FREQUENCIES UP TO 110 GHZ, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 709-712
Authors:
DURR W
ERBEN U
SCHUPPEN A
DIETRICH H
SCHUMACHER H
Citation: W. Durr et al., INVESTIGATION OF MICROSTRIP AND COPLANAR TRANSMISSION-LINES ON LOSSY SILICON SUBSTRATES WITHOUT BACKSIDE METALLIZATION, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 712-715
Authors:
RASSHOFER RH
THIEME MO
BIEBL EM
Citation: Rh. Rasshofer et al., CIRCULARLY-POLARIZED MILLIMETER-WAVE RECTENNA ON SILICON SUBSTRATE, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 715-718