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Results: 201-225/1514
Authors:
SCHAEFER M
FOURNELLE RA
LIANG J
Citation: M. Schaefer et al., THEORY FOR INTERMETALLIC PHASE GROWTH BETWEEN CU AND LIQUID SN-PB SOLDER BASED ON GRAIN-BOUNDARY DIFFUSION CONTROL, Journal of electronic materials, 27(11), 1998, pp. 1167-1176
Authors:
ERICKSON KL
HOPKINS PL
VIANCO PT
Citation: Kl. Erickson et al., MODELING THE SOLID-STATE REACTION BETWEEN SN-PB SOLDER AND A POROUS SUBSTRATE COATING, Journal of electronic materials, 27(11), 1998, pp. 1177-1192
Authors:
CHEN SW
CHEN CM
LIU WC
Citation: Sw. Chen et al., ELECTRIC-CURRENT EFFECTS UPON THE SN CU AND SN/NI INTERFACIAL REACTIONS/, Journal of electronic materials, 27(11), 1998, pp. 1193-1198
Authors:
KANG SK
PURUSHOTHAMAN S
Citation: Sk. Kang et S. Purushothaman, STUDY OF INTERFACIAL REACTIONS BETWEEN TIN AND COPPER BY DIFFERENTIALSCANNING CALORIMETRY, Journal of electronic materials, 27(11), 1998, pp. 1199-1204
Authors:
LIN KL
WANG YC
Citation: Kl. Lin et Yc. Wang, WETTING INTERACTION OF PB-FREE SN-ZN-AL SOLDERS ON METAL PLATED SUBSTRATE, Journal of electronic materials, 27(11), 1998, pp. 1205-1210
Authors:
KRZANOWSKI JE
RAZON E
HMIEL AF
Citation: Je. Krzanowski et al., THE EFFECT OF THIN-FILM STRUCTURE AND PROPERTIES ON GOLD BALL BONDING, Journal of electronic materials, 27(11), 1998, pp. 1211-1215
Authors:
MAVOORI H
JIN S
Citation: H. Mavoori et S. Jin, NEW, CREEP-RESISTANT, LOW-MELTING POINT SOLDERS WITH ULTRAFINE OXIDE DISPERSIONS, Journal of electronic materials, 27(11), 1998, pp. 1216-1222
Authors:
VAYNMAN S
GHOSH G
FINE ME
Citation: S. Vaynman et al., EFFECTS OF PALLADIUM AND SOLDER AGING ON MECHANICAL AND FATIGUE PROPERTIES OF TIN-LEAD EUTECTIC SOLDER, Journal of electronic materials, 27(11), 1998, pp. 1223-1228
Authors:
KARIYA Y
OTSUKA M
Citation: Y. Kariya et M. Otsuka, MECHANICAL FATIGUE CHARACTERISTICS OF SN-3.5AG-X (X = BI, CU, ZN AND IN) SOLDER ALLOYS, Journal of electronic materials, 27(11), 1998, pp. 1229-1235
Authors:
HIRSCH MT
DUXSTAD KJ
HALLER EE
RUVIMOV S
LILIENTALWEBER Z
Citation: Mt. Hirsch et al., CORRELATION OF MICROSTRUCTURE WITH ELECTRICAL BEHAVIOR OF TI GAN SCHOTTKY CONTACTS/, Journal of electronic materials, 27(11), 1998, pp. 1236-1239
Authors:
NAKAMURA Y
TANAKA I
TAKEUCHI N
KOSHIBA S
SAKAKI H
Citation: Y. Nakamura et al., FORMATION OF UNIFORM GAAS MULTI-ATOMIC STEPS WITH 20-30 NM PERIODICITY AND RELATED STRUCTURES ON VICINAL (111)B PLANES BY MBE, Journal of electronic materials, 27(11), 1998, pp. 1240-1243
Authors:
KOPF RF
HAMM RA
RYAN RW
TATE A
BURM J
Citation: Rf. Kopf et al., OPTIMIZATION OF THE BASE ELECTRODE FOR INGAAS INP DHBT STRUCTURES WITH A BURIED EMITTER-BASE JUNCTION/, Journal of electronic materials, 27(11), 1998, pp. 1244-1247
Authors:
ZHANG XG
LI P
ZHAO G
PARENT DW
JAIN FC
AYERS JE
Citation: Xg. Zhang et al., REMOVAL OF THREADING DISLOCATIONS FROM PATTERNED HETEROEPITAXIAL SEMICONDUCTORS BY GLIDE TO SIDEWALLS, Journal of electronic materials, 27(11), 1998, pp. 1248-1253
Authors:
SCHNEUWLY A
GRONING P
SCHLAPBACH L
MULLER G
Citation: A. Schneuwly et al., BONDABILITY ANALYSIS OF BOND PADS BY THERMOELECTRIC TEMPERATURE-MEASUREMENTS, Journal of electronic materials, 27(11), 1998, pp. 1254-1261
Authors:
PARK M
YU HK
KOO JG
JANG J
NAM KS
Citation: M. Park et al., HIGH-QUALITY CONFORMAL SILICON-OXIDE FILMS PREPARED BY MULTISTEP SPUTTERING PECVD AND CHEMICAL-MECHANICAL POLISHING, Journal of electronic materials, 27(11), 1998, pp. 1262-1267
Authors:
KOVSARIAN A
SHANNON JM
Citation: A. Kovsarian et Jm. Shannon, AMORPHOUS CHROMIUM SILICIDE FORMATION IN HYDROGENATED AMORPHOUS-SILICON, Journal of electronic materials, 27(11), 1998, pp. 1268-1271
Authors:
WANG XJ
HE L
Citation: Xj. Wang et L. He, ELECTRICAL CHARACTERISTICS OF HIGH-PERFORMANCE AU N-GAN SCHOTTKY DIODES/, Journal of electronic materials, 27(11), 1998, pp. 1272-1276
Authors:
OGURA M
MURAKAMI M
Citation: M. Ogura et M. Murakami, DEVELOPMENT OF INXGA1-XAS-BASED OHMIC CONTACTS FOR P-TYPE GAAS BY RADIOFREQUENCY SPUTTERING, Journal of electronic materials, 27(10), 1998, pp. 64-67
Authors:
FANG ZQ
LOOK DC
UCHIDA M
KAINOSHO K
ODA O
Citation: Zq. Fang et al., DEEP CENTERS IN UNDOPED SEMIINSULATING INP, Journal of electronic materials, 27(10), 1998, pp. 68-71
Authors:
RAJAN K
SINGH RK
Citation: K. Rajan et Rk. Singh, SPECIAL SECTION ON CHEMICAL-MECHANICAL PLANARIZATION - FOREWORD, Journal of electronic materials, 27(10), 1998, pp. 1067-1067
Authors:
DARAB JG
MATSON DW
Citation: Jg. Darab et Dw. Matson, CONTINUOUS HYDROTHERMAL PROCESSING OF NANO-CRYSTALLINE PARTICULATES FOR CHEMICAL-MECHANICAL PLANARIZATION, Journal of electronic materials, 27(10), 1998, pp. 1068-1072
Authors:
BIBBY T
HOLLAND K
Citation: T. Bibby et K. Holland, END-POINT DETECTION FOR CMP, Journal of electronic materials, 27(10), 1998, pp. 1073-1081
Authors:
ROGERS C
COPPETA J
RACZ L
PHILIPOSSIAN A
KAUFMAN FB
BRAMONO D
Citation: C. Rogers et al., ANALYSIS OF FLOW BETWEEN A WAFER AND PAD DURING CMP PRECESSES, Journal of electronic materials, 27(10), 1998, pp. 1082-1087
Authors:
TOWERY D
FURY MA
Citation: D. Towery et Ma. Fury, CHEMICAL-MECHANICAL POLISHING OF POLYMER-FILMS, Journal of electronic materials, 27(10), 1998, pp. 1088-1094
Authors:
BUSNAINA AA
ELSAWY TM
Citation: Aa. Busnaina et Tm. Elsawy, POST-CMP CLEANING USING ACOUSTIC STREAMING, Journal of electronic materials, 27(10), 1998, pp. 1095-1098