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Table of contents of journal: *Microelectronics and reliability

Results: 76-100/1272

Authors: HARTLER G GOLE U PASCHKE K
Citation: G. Hartler et al., EXTENDED NOISE-ANALYSIS - A NOVEL TOOL FOR RELIABILITY SCREENING, Microelectronics and reliability, 38(6-8), 1998, pp. 1193-1198

Authors: SALVIATI G ZANOTTIFREGONARA C BORGARINO M LAZZARINI L CATTANI L COVA P MAZZER M
Citation: G. Salviati et al., STUDY OF DEGRADATION MECHANISMS IN COMPOUND SEMICONDUCTOR-BASED DEVICES BY SEM-CATHODOLUMINESCENCE, Microelectronics and reliability, 38(6-8), 1998, pp. 1199-1210

Authors: TAKESHITA T SUGO M NISHIYA T IGA R FUKUDA M ITAYA Y
Citation: T. Takeshita et al., DEGRADATION BEHAVIOR IN INGAAS GAAS STRAINED-QUANTUM-WELL LASERS/, Microelectronics and reliability, 38(6-8), 1998, pp. 1211-1214

Authors: BONFIGLIO A CASU MB VANZI M DEPALO R MAGISTRALI F SALMINI G
Citation: A. Bonfiglio et al., EARLY SIGNATURES FOR REDR-BASED LASER DEGRADATIONS, Microelectronics and reliability, 38(6-8), 1998, pp. 1215-1220

Authors: MORIN M DEFARS JP DEVOLDERE P
Citation: M. Morin et al., COUPLING TECHNOLOGY IMPACT ON LOW-COST LASER MODULES PERFORMANCES ANDRELIABILITY, Microelectronics and reliability, 38(6-8), 1998, pp. 1221-1226

Authors: MENEGNESSO G CROSATO C GARAT F MARTINES G PACCAGNELLA A ZANONI E
Citation: G. Menegnesso et al., FAILURE MECHANISMS OF SCHOTTKY GATE CONTACT DEGRADATION AND DEEP TRAPS CREATION IN ALGAAS INGAAS PM-HEMTS SUBMITTED TO ACCELERATED LIFE TESTS/, Microelectronics and reliability, 38(6-8), 1998, pp. 1227-1232

Authors: CATTANI L BORGARINO M FANTINI F
Citation: L. Cattani et al., PULSED CURRENT STRESS OF BERILLIUM DOPED ALGAAS GAAS HBTS/, Microelectronics and reliability, 38(6-8), 1998, pp. 1233-1237

Authors: FENG T STRIFAS N CHRISTOU A
Citation: T. Feng et al., DEGRADATION OF PERFORMANCE IN MESFETS AND HEMTS - SIMULATION AND MEASUREMENT OF RELIABILITY, Microelectronics and reliability, 38(6-8), 1998, pp. 1239-1244

Authors: MARTINA E LANDESMAN JP BRAUN P FILY A
Citation: E. Martina et al., A NEW METHOD OR TEMPERATURE MAPPING ON GAAS FIELD-EFFECT TRANSISTORS, Microelectronics and reliability, 38(6-8), 1998, pp. 1245-1250

Authors: DEREUS R CHRISTENSEN C WEICHEL S BOUWSTRA S JANTING J ERIKSEN GF DYRBYE K BROWN TR KROG JP JENSEN OS GRAVESEN P
Citation: R. Dereus et al., RELIABILITY OF INDUSTRIAL PACKAGING FOR MICROSYSTEMS, Microelectronics and reliability, 38(6-8), 1998, pp. 1251-1260

Authors: PELLET C LECOUVE M FREMONT H VAL A ESTEVE D
Citation: C. Pellet et al., ANALYSIS OF THERMOMECHANICAL STRESSES IN A 3D PACKAGED MICRO ELECTRO MECHANICAL SYSTEM, Microelectronics and reliability, 38(6-8), 1998, pp. 1261-1264

Authors: MEUNIER D DESPLATS R BENBRIK J PEREZ G PELLET C ETSEVE D BENTEO B
Citation: D. Meunier et al., ELECTRICAL CHARACTERIZATION AND MODIFICATION OF A MICROELECTROMECHANICAL SYSTEM (MEMS) FOR EXTENDED MECHANICAL RELIABILITY AND FATIGUE TESTING, Microelectronics and reliability, 38(6-8), 1998, pp. 1265-1269

Authors: NYSAETHER JB LARSEN A LIVEROD B OHLCKERS P
Citation: Jb. Nysaether et al., STRUCTURES FOR PIEZORESISTIVE MEASUREMENT OF PACKAGE INDUCED STRESS IN TRANSFER MOLDED SILICON PRESSURE SENSORS, Microelectronics and reliability, 38(6-8), 1998, pp. 1271-1276

Authors: BARRETT J
Citation: J. Barrett, ELECTRONIC SYSTEMS PACKAGING - FUTURE RELIABILITY CHALLENGES, Microelectronics and reliability, 38(6-8), 1998, pp. 1277-1286

Authors: LIANG ZN KUPER FG CHEN MS
Citation: Zn. Liang et al., A CONCEPT TO RELATE WIRE BONDING PARAMETERS TO BONDABILITY AND BALL BOND RELIABILITY, Microelectronics and reliability, 38(6-8), 1998, pp. 1287-1291

Authors: DILHAIRE S CORNET A SCHAUB E RAUZAN C CLAEYS W
Citation: S. Dilhaire et al., MEASUREMENT OF THE THERMOMECHANICAL BEHAVIOR OF THE SOLDER-LEAD INTERFACE IN SOLDER JOINTS BY LASER PROBING - A NEW METHOD FOR MEASURING THE BOND QUALITY, Microelectronics and reliability, 38(6-8), 1998, pp. 1293-1296

Authors: JANSSON P
Citation: P. Jansson, EXPERIMENTAL-DESIGN AND EVALUATION OF INTERCONNECTION MATERIALS FOR IMPROVEMENT OF JOINT RELIABILITY AT POWER TRANSISTORS, Microelectronics and reliability, 38(6-8), 1998, pp. 1297-1300

Authors: RAMMINGER S TURKES P WACHUTKA G
Citation: S. Ramminger et al., CRACK MECHANISM IN WIRE BONDING JOINTS, Microelectronics and reliability, 38(6-8), 1998, pp. 1301-1305

Authors: ESSER RH DIMOULAS A STRIFAS N CHRISTOU A PAPANICOLAU N
Citation: Rh. Esser et al., MATERIALS INTERFACES IN FLIP-CHIP INTERCONNECTS FOR OPTICAL-COMPONENTS - PERFORMANCE AND DEGRADATION MECHANISMS, Microelectronics and reliability, 38(6-8), 1998, pp. 1307-1312

Authors: ETOH Y KAYAMA T SASAKI K
Citation: Y. Etoh et al., A STUDY OF SOLDERING HEAT EVALUATION FOR SMDS, Microelectronics and reliability, 38(6-8), 1998, pp. 1313-1318

Authors: BERG H WOLFGANG E
Citation: H. Berg et E. Wolfgang, ADVANCED IGBT MODULES FOR RAILWAY TRACTION APPLICATIONS - RELIABILITYTESTING, Microelectronics and reliability, 38(6-8), 1998, pp. 1319-1323

Authors: JANUSZEWSKI S KOCISZEWSKASZCZERBIK M SWIATEK H
Citation: S. Januszewski et al., SOME OBSERVATION DEALING WITH THE FAILURES OF IGBT TRANSISTORS IN HIGH-POWER CONVERTERS, Microelectronics and reliability, 38(6-8), 1998, pp. 1325-1330

Authors: GALATEANU L STOICA MG POPA E
Citation: L. Galateanu et al., STRAIN DEPENDING RELIABILITY OF AUTOMOTIVE DIODES, Microelectronics and reliability, 38(6-8), 1998, pp. 1331-1334

Authors: FINDEISEN C HERR E SCHENKEL M SCHLEGEL R ZELLER HR
Citation: C. Findeisen et al., EXTRAPOLATION OF COSMIC-RAY INDUCED FAILURES FROM TEST TO FIELD CONDITIONS FOR IGBT MODULES, Microelectronics and reliability, 38(6-8), 1998, pp. 1335-1339

Authors: NASSIM K JOANNES L CORNET A DILHAIRE S SCHAUB E CLAEYS W
Citation: K. Nassim et al., THERMOMECHANICAL DEFORMATION IMAGING OF POWER DEVICES BY ELECTRONIC SPECKLE PATTERN INTERFEROMETRY (ESPI), Microelectronics and reliability, 38(6-8), 1998, pp. 1341-1345
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