Citation: G. Hartler et al., EXTENDED NOISE-ANALYSIS - A NOVEL TOOL FOR RELIABILITY SCREENING, Microelectronics and reliability, 38(6-8), 1998, pp. 1193-1198
Authors:
SALVIATI G
ZANOTTIFREGONARA C
BORGARINO M
LAZZARINI L
CATTANI L
COVA P
MAZZER M
Citation: G. Salviati et al., STUDY OF DEGRADATION MECHANISMS IN COMPOUND SEMICONDUCTOR-BASED DEVICES BY SEM-CATHODOLUMINESCENCE, Microelectronics and reliability, 38(6-8), 1998, pp. 1199-1210
Authors:
TAKESHITA T
SUGO M
NISHIYA T
IGA R
FUKUDA M
ITAYA Y
Citation: T. Takeshita et al., DEGRADATION BEHAVIOR IN INGAAS GAAS STRAINED-QUANTUM-WELL LASERS/, Microelectronics and reliability, 38(6-8), 1998, pp. 1211-1214
Citation: M. Morin et al., COUPLING TECHNOLOGY IMPACT ON LOW-COST LASER MODULES PERFORMANCES ANDRELIABILITY, Microelectronics and reliability, 38(6-8), 1998, pp. 1221-1226
Authors:
MENEGNESSO G
CROSATO C
GARAT F
MARTINES G
PACCAGNELLA A
ZANONI E
Citation: G. Menegnesso et al., FAILURE MECHANISMS OF SCHOTTKY GATE CONTACT DEGRADATION AND DEEP TRAPS CREATION IN ALGAAS INGAAS PM-HEMTS SUBMITTED TO ACCELERATED LIFE TESTS/, Microelectronics and reliability, 38(6-8), 1998, pp. 1227-1232
Citation: L. Cattani et al., PULSED CURRENT STRESS OF BERILLIUM DOPED ALGAAS GAAS HBTS/, Microelectronics and reliability, 38(6-8), 1998, pp. 1233-1237
Citation: T. Feng et al., DEGRADATION OF PERFORMANCE IN MESFETS AND HEMTS - SIMULATION AND MEASUREMENT OF RELIABILITY, Microelectronics and reliability, 38(6-8), 1998, pp. 1239-1244
Citation: E. Martina et al., A NEW METHOD OR TEMPERATURE MAPPING ON GAAS FIELD-EFFECT TRANSISTORS, Microelectronics and reliability, 38(6-8), 1998, pp. 1245-1250
Authors:
PELLET C
LECOUVE M
FREMONT H
VAL A
ESTEVE D
Citation: C. Pellet et al., ANALYSIS OF THERMOMECHANICAL STRESSES IN A 3D PACKAGED MICRO ELECTRO MECHANICAL SYSTEM, Microelectronics and reliability, 38(6-8), 1998, pp. 1261-1264
Authors:
MEUNIER D
DESPLATS R
BENBRIK J
PEREZ G
PELLET C
ETSEVE D
BENTEO B
Citation: D. Meunier et al., ELECTRICAL CHARACTERIZATION AND MODIFICATION OF A MICROELECTROMECHANICAL SYSTEM (MEMS) FOR EXTENDED MECHANICAL RELIABILITY AND FATIGUE TESTING, Microelectronics and reliability, 38(6-8), 1998, pp. 1265-1269
Authors:
NYSAETHER JB
LARSEN A
LIVEROD B
OHLCKERS P
Citation: Jb. Nysaether et al., STRUCTURES FOR PIEZORESISTIVE MEASUREMENT OF PACKAGE INDUCED STRESS IN TRANSFER MOLDED SILICON PRESSURE SENSORS, Microelectronics and reliability, 38(6-8), 1998, pp. 1271-1276
Citation: Zn. Liang et al., A CONCEPT TO RELATE WIRE BONDING PARAMETERS TO BONDABILITY AND BALL BOND RELIABILITY, Microelectronics and reliability, 38(6-8), 1998, pp. 1287-1291
Authors:
DILHAIRE S
CORNET A
SCHAUB E
RAUZAN C
CLAEYS W
Citation: S. Dilhaire et al., MEASUREMENT OF THE THERMOMECHANICAL BEHAVIOR OF THE SOLDER-LEAD INTERFACE IN SOLDER JOINTS BY LASER PROBING - A NEW METHOD FOR MEASURING THE BOND QUALITY, Microelectronics and reliability, 38(6-8), 1998, pp. 1293-1296
Citation: P. Jansson, EXPERIMENTAL-DESIGN AND EVALUATION OF INTERCONNECTION MATERIALS FOR IMPROVEMENT OF JOINT RELIABILITY AT POWER TRANSISTORS, Microelectronics and reliability, 38(6-8), 1998, pp. 1297-1300
Authors:
ESSER RH
DIMOULAS A
STRIFAS N
CHRISTOU A
PAPANICOLAU N
Citation: Rh. Esser et al., MATERIALS INTERFACES IN FLIP-CHIP INTERCONNECTS FOR OPTICAL-COMPONENTS - PERFORMANCE AND DEGRADATION MECHANISMS, Microelectronics and reliability, 38(6-8), 1998, pp. 1307-1312
Citation: H. Berg et E. Wolfgang, ADVANCED IGBT MODULES FOR RAILWAY TRACTION APPLICATIONS - RELIABILITYTESTING, Microelectronics and reliability, 38(6-8), 1998, pp. 1319-1323
Authors:
JANUSZEWSKI S
KOCISZEWSKASZCZERBIK M
SWIATEK H
Citation: S. Januszewski et al., SOME OBSERVATION DEALING WITH THE FAILURES OF IGBT TRANSISTORS IN HIGH-POWER CONVERTERS, Microelectronics and reliability, 38(6-8), 1998, pp. 1325-1330
Authors:
FINDEISEN C
HERR E
SCHENKEL M
SCHLEGEL R
ZELLER HR
Citation: C. Findeisen et al., EXTRAPOLATION OF COSMIC-RAY INDUCED FAILURES FROM TEST TO FIELD CONDITIONS FOR IGBT MODULES, Microelectronics and reliability, 38(6-8), 1998, pp. 1335-1339
Authors:
NASSIM K
JOANNES L
CORNET A
DILHAIRE S
SCHAUB E
CLAEYS W
Citation: K. Nassim et al., THERMOMECHANICAL DEFORMATION IMAGING OF POWER DEVICES BY ELECTRONIC SPECKLE PATTERN INTERFEROMETRY (ESPI), Microelectronics and reliability, 38(6-8), 1998, pp. 1341-1345