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Results: 101-125/223
Authors:
GOH TN
Citation: Tn. Goh, ECONOMICAL EXPERIMENTATION VIA LEAN DESIGN, Quality and reliability engineering international, 12(5), 1996, pp. 383-388
Authors:
LABAT N
TOUBOUL A
Citation: N. Labat et A. Touboul, SPECIAL ISSUE - PAPERS PRESENTED AT THE EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS 1995 (ESREF-95)BORDEAUX-ARCACHON, FRANCE, OCTOBER 1995, Quality and reliability engineering international, 12(4), 1996, pp. 219-219
Authors:
GRIEP S
KEITELSCHULZ D
SCHMITTLANDSIEDEL D
Citation: S. Griep et al., DESIGN BASED FAILURE ANALYSIS AND YIELD IMPROVEMENT IN CMOS-CIRCUITS, Quality and reliability engineering international, 12(4), 1996, pp. 221-227
Authors:
MOOSA MS
POOLE KF
GRAMS ML
Citation: Ms. Moosa et al., EFSIM - AN INTEGRATED-CIRCUIT EARLY FAILURE SIMULATOR, Quality and reliability engineering international, 12(4), 1996, pp. 229-234
Authors:
GARYET TC
DICKSON N
Citation: Tc. Garyet et N. Dickson, IMPROVED UNDERSTANDING OF PHYSICAL DEFECT MECHANISMS USING FAULT SIMULATION, Quality and reliability engineering international, 12(4), 1996, pp. 235-240
Authors:
EDHOLM K
Citation: K. Edholm, NEW MODEL FOR RELIABILITY PREDICTION OF TELECOMMUNICATION HARDWARE, Quality and reliability engineering international, 12(4), 1996, pp. 241-246
Authors:
GREGORIS G
BOUTON F
DEKEUKELEIRE C
SILIPRANDI P
BAIO F
DESCHEPPER L
DECEUNINCK W
TIELEMANS L
AHRENS T
KRUMM M
Citation: G. Gregoris et al., EVALUATION ON A 2-DAY TIME-SCALE OF HIGH-RELIABILITY ELECTRONIC ASSEMBLIES BY IN-SITU ELECTRICAL AND OPTOMECHANICAL TEST TECHNIQUES, Quality and reliability engineering international, 12(4), 1996, pp. 247-252
Authors:
MASHIKO Y
KOYAMA T
KOYAMA H
Citation: Y. Mashiko et al., A NEW FAILURE ANALYSIS TECHNIQUE USING THE THERMO-ELECTROMOTIVE FORCEINDUCED BY LASER IRRADIATION, Quality and reliability engineering international, 12(4), 1996, pp. 253-257
Authors:
TOUZEL J
NEUMANN I
LORENZ H
BOIT C
KORNER H
SCHURG S
Citation: J. Touzel et al., LOCALIZATION OF SOFT TUNGSTEN CONTACT FAILS WITH RELIABILITY IMPLICATIONS BY INNOVATIVE REVERSE ENGINEERING TECHNIQUES, Quality and reliability engineering international, 12(4), 1996, pp. 259-264
Authors:
EGGER P
GIESER H
KROPF R
GUGGENMOS X
Citation: P. Egger et al., ESD MONITOR CIRCUIT - A TOOL TO INVESTIGATE THE SUSCEPTIBILITY AND FAILURE MECHANISMS OF THE CHARGED DEVICE MODEL, Quality and reliability engineering international, 12(4), 1996, pp. 265-270
Authors:
GALBRAITH JM
GALLOWAY KF
SCHRIMPF RD
JOHNSON GH
Citation: Jm. Galbraith et al., RELIABILITY CHALLENGES FOR LOW-VOLTAGE LOW-POWER INTEGRATED-CIRCUITS, Quality and reliability engineering international, 12(4), 1996, pp. 271-279
INVESTIGATION OF RELIABILITY MEASUREMENTS WITH RAMPED AND CONSTANT VOLTAGE STRESS ON MOS GATE OXIDES
Authors:
MARTIN A
OSULLIVAN P
MATHEWSON A
Citation: A. Martin et al., INVESTIGATION OF RELIABILITY MEASUREMENTS WITH RAMPED AND CONSTANT VOLTAGE STRESS ON MOS GATE OXIDES, Quality and reliability engineering international, 12(4), 1996, pp. 281-286
PHYSICAL-MECHANISMS OF DIELECTRIC-BREAKDOWN IN SIO2 FOR THE RANGE OF -150-DEGREES-C TO 150-DEGREES-C
Authors:
ABADEER WW
VOLLERTSEN RP
Citation: Ww. Abadeer et Rp. Vollertsen, PHYSICAL-MECHANISMS OF DIELECTRIC-BREAKDOWN IN SIO2 FOR THE RANGE OF -150-DEGREES-C TO 150-DEGREES-C, Quality and reliability engineering international, 12(4), 1996, pp. 287-289
Authors:
GUICHARD E
LEROUX C
BLACHIER D
REIMBOLD G
CRISTOLOVEANU S
BOREL G
Citation: E. Guichard et al., COMPARISON OF HOT-CARRIERS EFFECTS IN SOI AND BULK DEVICES USING A PHOTON-EMISSION TECHNIQUE, Quality and reliability engineering international, 12(4), 1996, pp. 291-296
Authors:
CIAPPA M
MALBERTI P
Citation: M. Ciappa et P. Malberti, PLASTIC-STRAIN OF ALUMINUM INTERCONNECTIONS DURING PULSED OPERATION OF IGBT MULTICHIP MODULES, Quality and reliability engineering international, 12(4), 1996, pp. 297-303
Authors:
BRAUD F
TARTAVEL G
PALLEAU J
TORRES J
PERSICO A
REIMBOLD G
Citation: F. Braud et al., ELECTROMIGRATION OF INTERCONNECTS OF A TIN CU/TIN/TI STRUCTURE/, Quality and reliability engineering international, 12(4), 1996, pp. 305-308
Authors:
SAYSSET N
LABAT N
TOUBOUL A
DANTO Y
DUMAS JM
Citation: N. Saysset et al., COMPARISON OF CONVENTIONAL AND PSEUDOMORPHIC HEMTS PERFORMANCES BY DRAIN CURRENT TRANSIENT SPECTROSCOPY AND LF CHANNEL NOISE, Quality and reliability engineering international, 12(4), 1996, pp. 309-315
Authors:
BAUDUIN B
WALLON J
RIVIERE D
BOULAIRE JY
Citation: B. Bauduin et al., HIGHLIGHTING OF 2 TYPES OF DEFECTS IN 1300 NM PBC LASER-DIODES, Quality and reliability engineering international, 12(4), 1996, pp. 317-320
A STUDY OF SIDE GATE TEST STRUCTURES IN INALAS INGAAS HEMTS FOR OPTOELECTRONIC CIRCUIT APPLICATIONS/
Authors:
BERTHELEMOT C
FARRENQ A
VIGIER P
DUMAS JM
CLEI A
PALLA R
HARMAND JC
Citation: C. Berthelemot et al., A STUDY OF SIDE GATE TEST STRUCTURES IN INALAS INGAAS HEMTS FOR OPTOELECTRONIC CIRCUIT APPLICATIONS/, Quality and reliability engineering international, 12(4), 1996, pp. 321-327
Authors:
PUSARLA C
LIN L
CHRISTOU A
Citation: C. Pusarla et al., RELIABILITY ISSUES IN HYBRID OPTOELECTRONIC INTERCONNECT SYSTEMS, Quality and reliability engineering international, 12(4), 1996, pp. 329-334
Authors:
OCONNOR P
Citation: P. Oconnor, IS ENGINEERING NORMAL, Quality and reliability engineering international, 12(3), 1996, pp. 145-145
Authors:
MALEC HA
Citation: Ha. Malec, IS ENGINEERING NORMAL - EDITORIAL COMMENT, Quality and reliability engineering international, 12(3), 1996, pp. 146-146
Authors:
KOHOUTEK HJ
Citation: Hj. Kohoutek, REFLECTIONS ON THE CAPABILITY AND MATURITY MODELS OF ENGINEERING PROCESSES, Quality and reliability engineering international, 12(3), 1996, pp. 147-155
Authors:
DELCASTILLO E
MONTGOMERY DC
Citation: E. Delcastillo et Dc. Montgomery, SHORT-RUN STATISTICAL PROCESS-CONTROL - Q-CHART ENHANCEMENTS AND ALTERNATIVE METHODS (VOL 10, PG 87, 1994), Quality and reliability engineering international, 12(3), 1996, pp. 157-157
Authors:
QUESENBERRY CP
Citation: Cp. Quesenberry, SHORT-RUN STATISTICAL PROCESS-CONTROL - Q-CHART ENHANCEMENTS AND ALTERNATIVE METHODS - RESPONSE, Quality and reliability engineering international, 12(3), 1996, pp. 159-161