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Results:
1-20
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Results: 20
Authors:
Ling, CC
Beling, CD
Gong, M
Chen, XD
Fung, S
Citation: Cc. Ling et al., Recent advances in defect characterization in 6H-SiC using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy, DEFECT DIFF, 183-1, 2000, pp. 1-23
Authors:
Kamiura, Y
Fukuda, K
Yamashita, Y
Ishiyama, T
Citation: Y. Kamiura et al., Electronic state, atomic configuration and local motion of hydrogen aroundcarbon in silicon, DEFECT DIFF, 183-1, 2000, pp. 25-40
Authors:
Knights, AP
Coleman, PG
Citation: Ap. Knights et Pg. Coleman, Recent advances in the application of slow positron beams to the study of ion implantation defects in silicon, DEFECT DIFF, 183-1, 2000, pp. 41-52
Authors:
Walther, T
Citation: T. Walther, Diffusion processes in strained silicon germanium island structures, DEFECT DIFF, 183-1, 2000, pp. 53-60
Authors:
Rahman, M
Citation: M. Rahman, Damage in III-V semiconductors from very low-energy process plasmas, DEFECT DIFF, 183-1, 2000, pp. 61-75
Authors:
Takano, Y
Fuke, S
Citation: Y. Takano et S. Fuke, Influence of In-doping on the crystalline quality of GaAs epilayers on Si substrates, DEFECT DIFF, 183-1, 2000, pp. 77-83
Authors:
Chen, N
Citation: N. Chen, Point defects in III-V compound semiconductors, DEFECT DIFF, 183-1, 2000, pp. 85-93
Authors:
Koch, R
Wassermann, B
Wedler, G
Citation: R. Koch et al., On the role of interdiffusion during the growth of Ge on Si(001) and Si(111), DEFECT DIFF, 183-1, 2000, pp. 95-102
Authors:
Mainzer, N
Zolotoyabko, E
Citation: N. Mainzer et E. Zolotoyabko, Point defects and their diffusion in mercury cadmium telluride: Investigation based upon high-resolution x-ray diffraction, DEFECT DIFF, 183-1, 2000, pp. 103-125
Authors:
Frost, F
Lippold, G
Schindler, A
Bigl, F
Citation: F. Frost et al., Morphological, structural and electronic damage on InAs and InSb surfaces induced by (reactive) ion beam etching, DEFECT DIFF, 183-1, 2000, pp. 127-146
Authors:
Wu, J
Lin, F
Citation: J. Wu et F. Lin, Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors, DEFECT DIFF, 183-1, 2000, pp. 147-152
Authors:
Wada, M
Sakakibara, K
Umezawa, T
Nakajima, S
Araki, S
Kudou, T
Ueda, T
Citation: M. Wada et al., Diffusion of zinc in InP, InAsP and InGaAs by the metal-organic vapor-phase diffusion technique, DEFECT DIFF, 183-1, 2000, pp. 153-161
Authors:
Wong-Leung, J
Fatima, S
Jagadish, C
FitzGerald, JD
Citation: J. Wong-leung et al., Effect of implant temperature on extended defects created by ion implantation in silicon, DEFECT DIFF, 183-1, 2000, pp. 163-169
Authors:
Tanaka, S
Ikari, T
Kitagawa, H
Citation: S. Tanaka et al., Diffusion and electrical properties of nickel in silicon, DEFECT DIFF, 183-1, 2000, pp. 171-180
Authors:
Ressel, B
Heun, S
Schmidt, T
Prince, KC
Citation: B. Ressel et al., XPEEM study of liquid Au-Si droplets on Si(111) near to the eutectic point, DEFECT DIFF, 183-1, 2000, pp. 181-187
Authors:
Krishnamoorthy, V
Lambers, MP
Jones, KS
Citation: V. Krishnamoorthy et al., Effect of surface proximity upon point defects in silicon, DEFECT DIFF, 183-1, 2000, pp. 189-198
Authors:
Cristiano, F
Colombeau, B
Claverie, A
Citation: F. Cristiano et al., Energetics of extrinsic defects in Si and their role in nonequilibrium dopant diffusion, DEFECT DIFF, 183-1, 2000, pp. 199-206
Study of diffusion and defects by medium-energy coaxial impact-collision ion scattering spectroscopy
Authors:
Kobayashi, T
McConville, CF
Nakamura, J
Dorenbos, G
Sone, H
Katayama, T
Aono, M
Citation: T. Kobayashi et al., Study of diffusion and defects by medium-energy coaxial impact-collision ion scattering spectroscopy, DEFECT DIFF, 183-1, 2000, pp. 207-213
Authors:
Fung, KK
Wang, N
Citation: Kk. Fung et N. Wang, Transmission electron microscopic study of intersecting stacking faults inZnSe/GaAs(001) epilayers and (SiGe)/Si(001) multilayers, DEFECT DIFF, 183-1, 2000, pp. 215-230
Authors:
Antoncik, E
Citation: E. Antoncik, Analytical in-diffusion profiles of dopants in semiconductors, DEFECT DIFF, 183-1, 2000, pp. 231-238
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