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Results: 1-25/3259
Authors:
Farahmand, M
Brennan, KF
Gebara, E
Heo, D
Suh, Y
Laskar, J
Citation: M. Farahmand et al., Theoretical study of RF-breakdown in bulk GaN and GaN MESFETs, IEEE DEVICE, 48(9), 2001, pp. 1844-1849
Authors:
Boroumand, FA
Swanson, JG
Citation: Fa. Boroumand et Jg. Swanson, Observations of backgate impedance dispersion in GaAs isolation structures, IEEE DEVICE, 48(9), 2001, pp. 1850-1858
Authors:
Boroumand, FA
Swanson, JG
Citation: Fa. Boroumand et Jg. Swanson, A comprehensive model of backgate impedance dispersions in GaAs isolation structures, IEEE DEVICE, 48(9), 2001, pp. 1859-1869
Authors:
Arnold, E
Alok, D
Citation: E. Arnold et D. Alok, Effect of interface states on electron transport in 4H-SiC inversion layers, IEEE DEVICE, 48(9), 2001, pp. 1870-1877
Authors:
Gamiz, F
Roldan, JB
Kosina, H
Grasser, T
Citation: F. Gamiz et al., Improving strained-Si on Si1-xGex deep submicron MOSFETs performance by means of a stepped doping profile, IEEE DEVICE, 48(9), 2001, pp. 1878-1884
Authors:
Zhang, Q
Liou, JJ
McMacken, J
Thomson, J
Layman, P
Citation: Q. Zhang et al., Development of robust interconnect model based on design of experiments and multiobjective optimization, IEEE DEVICE, 48(9), 2001, pp. 1885-1891
Authors:
Genoe, J
Coppee, D
Stiens, JH
Vounckx, RA
Kuijk, M
Citation: J. Genoe et al., Calculation of the current response of the spatially modulated light CMOS detector, IEEE DEVICE, 48(9), 2001, pp. 1892-1902
Authors:
Jang, SH
Cho, KD
Tae, HS
Choi, KC
Lee, SH
Citation: Sh. Jang et al., Improvement of luminance and luminous efficiency using address voltage pulse during sustain-period of AC-PDP, IEEE DEVICE, 48(9), 2001, pp. 1903-1910
Authors:
Mahapatro, AK
Ghosh, S
Citation: Ak. Mahapatro et S. Ghosh, High rectification in metal-phthalocyanine based single layer devices, IEEE DEVICE, 48(9), 2001, pp. 1911-1914
Authors:
Furumiya, M
Hatano, K
Murakami, I
Kawasaki, T
Ogawa, C
Nakashiba, Y
Citation: M. Furumiya et al., A 1/3-in 1.3 M-pixel single-layer electrode CCD with a high-frame-rate skip mode, IEEE DEVICE, 48(9), 2001, pp. 1915-1921
Authors:
Furumiya, M
Suwazono, S
Morimoto, M
Nakashiba, Y
Kawakami, Y
Nakano, T
Satoh, T
Katoh, S
Syohji, D
Utsumi, H
Taniji, Y
Mutoh, N
Orihara, K
Teranishi, N
Citation: M. Furumiya et al., A 30 frames/s 2/3-in 1.3 M-pixel progressive scan IT-CCD image sensor, IEEE DEVICE, 48(9), 2001, pp. 1922-1928
Authors:
Dieci, D
Sozzi, G
Menozzi, R
Tediosi, E
Lanzieri, C
Canali, C
Citation: D. Dieci et al., Electric-field-related reliability of AlGaAs/GaAs power HFETs: Bias dependence and correlation with breakdown, IEEE DEVICE, 48(9), 2001, pp. 1929-1937
Authors:
Liu, WC
Pan, HJ
Chen, HI
Lin, KW
Cheng, SY
Yu, KH
Citation: Wc. Liu et al., Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor, IEEE DEVICE, 48(9), 2001, pp. 1938-1944
Authors:
Metz, M
Baltes, H
Citation: M. Metz et H. Baltes, Offset in CMOS magnetotransistors - Part I: Analysis of causes, IEEE DEVICE, 48(9), 2001, pp. 1945-1953
Authors:
Metz, M
Baltes, H
Citation: M. Metz et H. Baltes, Offset in CMOS magnetotransistors - Part II: Reduction, IEEE DEVICE, 48(9), 2001, pp. 1954-1960
Authors:
Takao, H
Fukumoto, H
Ishida, M
Citation: H. Takao et al., A CMOS integrated three-axis accelerometer fabricated with commercial submicrometer CMOS technology and bulk-micromachining, IEEE DEVICE, 48(9), 2001, pp. 1961-1968
Authors:
Miura, N
Abe, Y
Sugihara, K
Oishi, T
Furukawa, T
Nakahata, T
Shiozawa, K
Maruno, S
Citation: N. Miura et al., Junction capacitance reduction due to self-aligned pocket implantation in elevated source/drain NMOSFETs, IEEE DEVICE, 48(9), 2001, pp. 1969-1974
Authors:
Chen, XD
Liu, KC
Ouyang, QC
Jayanarayanan, SK
Banerjee, SK
Citation: Xd. Chen et al., Hole and electron mobility enhancement in strained SiGe vertical MOSFETs, IEEE DEVICE, 48(9), 2001, pp. 1975-1980
Authors:
Iniguez, B
Raskin, JP
Demeus, L
Neve, A
Vanhoenacker, D
Simon, P
Goffioul, M
Flandre, D
Citation: B. Iniguez et al., Deep-submicrometer DC-to-RF SOI MOSFET macro-model, IEEE DEVICE, 48(9), 2001, pp. 1981-1988
Authors:
Washio, K
Kondo, M
Ohue, E
Oda, K
Hayami, R
Tanabe, M
Shimamoto, H
Harada, T
Citation: K. Washio et al., A 0.2-mu m self-aligned selective-epitaxial-growth SiGeHBT featuring 107-GHz f(max) and 6.7-ps ECL, IEEE DEVICE, 48(9), 2001, pp. 1989-1994
Authors:
Takeuchi, K
Koh, R
Mogami, T
Citation: K. Takeuchi et al., A study of the threshold voltage variation for ultra-small bulk and SOICMOS, IEEE DEVICE, 48(9), 2001, pp. 1995-2001
Authors:
Yoon, SM
Ishiwara, H
Citation: Sm. Yoon et H. Ishiwara, Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics, IEEE DEVICE, 48(9), 2001, pp. 2002-2008
Authors:
Bradley, AT
Jaeger, RC
Suhling, JC
O'Connor, KJ
Citation: At. Bradley et al., Piezoresistive characteristics of short-channel MOSFETs on (100) silicon, IEEE DEVICE, 48(9), 2001, pp. 2009-2015
Authors:
Roy, PK
Chen, YN
Chetlur, S
Citation: Pk. Roy et al., Synthesis of a new manufacturable high-quality graded gate oxide for sub-0.2 mu m technologies, IEEE DEVICE, 48(9), 2001, pp. 2016-2021
Authors:
Rajendran, K
Schoenmaker, W
Decoutere, S
Loo, R
Caymax, M
Vandervorst, W
Citation: K. Rajendran et al., Measurement and simulation of boron diffusion in strained Si1-xGex epitaxial layers, IEEE DEVICE, 48(9), 2001, pp. 2022-2031