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Results: 1-12 |
Results: 12
MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY PB1-XSNXTE LAYERS WITH 0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1
Authors: RAPPL PHO CLOSS H FERREIRA SO ABRAMOF E BOSCHETTI C MOTISUKE P UETA AY BANDEIRA IN
Citation: Pho. Rappl et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY PB1-XSNXTE LAYERS WITH 0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1, Journal of crystal growth, 191(3), 1998, pp. 466-471
RECIPROCAL SPACE MAPS OF PBTE SNTE SUPERLATTICES/
Authors: FERREIRA SO ABRAMOF E RAPPL PHO UETA AY CLOSS H BOSCHETTI C MOTISUKE P BANDEIRA IN
Citation: So. Ferreira et al., RECIPROCAL SPACE MAPS OF PBTE SNTE SUPERLATTICES/, Journal of applied physics, 84(7), 1998, pp. 3650-3653
METAL-NONMETAL TRANSITION AND RESISTIVITY OF SILICON IMPLANTED WITH BISMUTH
Authors: ABRAMOF E DASILVA AF SERNELIUS BE DESOUZA JP BOUDINOV H
Citation: E. Abramof et al., METAL-NONMETAL TRANSITION AND RESISTIVITY OF SILICON IMPLANTED WITH BISMUTH, Journal of materials research, 12(3), 1997, pp. 641-645
TRANSPORT-PROPERTIES OF SILICON IMPLANTED WITH BISMUTH
Authors: ABRAMOF E DASILVA AF SERNELIUS BE DESOUZA JP BOUDINOV H
Citation: E. Abramof et al., TRANSPORT-PROPERTIES OF SILICON IMPLANTED WITH BISMUTH, Physical review. B, Condensed matter, 55(15), 1997, pp. 9584-9589
ELECTRICAL-PROPERTIES OF PB1-XSNXTE LAYERS WITH 0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1 GROWN BY MOLECULAR-BEAM EPITAXY
Authors: ABRAMOF E FERREIRA SO RAPPL PHO CLOSS H BANDEIRA IN
Citation: E. Abramof et al., ELECTRICAL-PROPERTIES OF PB1-XSNXTE LAYERS WITH 0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1 GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 82(5), 1997, pp. 2405-2410
SHORT-PERIOD CDTE(ZNTE) MNTE SUPERLATTICES - GROWTH AND CHARACTERIZATION/
Authors: ABRAMOF E FASCHINGER W SITTER H PESEK A
Citation: E. Abramof et al., SHORT-PERIOD CDTE(ZNTE) MNTE SUPERLATTICES - GROWTH AND CHARACTERIZATION/, Journal of crystal growth, 135(3-4), 1994, pp. 447-454
CDTE MNTE SHORT-PERIOD SUPERLATTICES - ELASTIC PROPERTIES/
Authors: ABRAMOF E FASCHINGER W SITTER H PESEK A
Citation: E. Abramof et al., CDTE MNTE SHORT-PERIOD SUPERLATTICES - ELASTIC PROPERTIES/, Applied physics letters, 64(1), 1994, pp. 49-51
X-RAY-DIFFRACTOMETRY OF SMALL DEFECTS IN LAYERED SYSTEMS
Authors: HOLY V KUBENA J ABRAMOF E PESEK A KOPPENSTEINER E
Citation: V. Holy et al., X-RAY-DIFFRACTOMETRY OF SMALL DEFECTS IN LAYERED SYSTEMS, Journal of physics. D, Applied physics, 26(4A), 1993, pp. 146-150
X-RAY DOUBLE AND TRIPLE-CRYSTAL DIFFRACTOMETRY OF MOSAIC STRUCTURE INHETEROEPITAXIAL LAYERS
Authors: HOLY V KUBENA J ABRAMOF E LISCHKA K PESEK A KOPPENSTEINER E
Citation: V. Holy et al., X-RAY DOUBLE AND TRIPLE-CRYSTAL DIFFRACTOMETRY OF MOSAIC STRUCTURE INHETEROEPITAXIAL LAYERS, Journal of applied physics, 74(3), 1993, pp. 1736-1743
P-TYPE CDTE EPILAYERS GROWN BY HOT-WALL-BEAM EPITAXY
Authors: PAULI H HINGERL K ABRAMOF E SITTER H ZAJICEK H LISCHKA K
Citation: H. Pauli et al., P-TYPE CDTE EPILAYERS GROWN BY HOT-WALL-BEAM EPITAXY, Journal of applied physics, 73(8), 1993, pp. 4061-4063
X-RAY ROCKING CURVE CHARACTERIZATION OF ZNTE LAYERS GROWN ON GAAS BY HOT-WALL EPITAXY
Authors: ABRAMOF E HINGERL K PESEK A SITTER H
Citation: E. Abramof et al., X-RAY ROCKING CURVE CHARACTERIZATION OF ZNTE LAYERS GROWN ON GAAS BY HOT-WALL EPITAXY, Semiconductor science and technology, 6(9A), 1991, pp. 80-82
PHOTOLUMINESCENCE AND EXCITATION SPECTROSCOPY OF ZNTE GAAS EPILAYERS GROWN BY HOT-WALL EPITAXY/
Authors: KUDLEK G PRESSER N GUTOWSKI J HINGERL K ABRAMOF E SITTER H
Citation: G. Kudlek et al., PHOTOLUMINESCENCE AND EXCITATION SPECTROSCOPY OF ZNTE GAAS EPILAYERS GROWN BY HOT-WALL EPITAXY/, Semiconductor science and technology, 6(9A), 1991, pp. 90-95
Risultati: 1-12 |