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Results: 1-25/150

PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE CHARACTERIZATION OF ERBIUM-DOPED SIGE

Authors: NEUFELD E STICHT A BRUNNER K RIEDL H ABSTREITER G HOLZBRECHER H BAY H

Citation: E. Neufeld et al., PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE CHARACTERIZATION OF ERBIUM-DOPED SIGE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2615-2618

SELF-ASSEMBLED GE DOTS - GROWTH, CHARACTERIZATION, ORDERING, AND APPLICATIONS

Authors: SCHITTENHELM P ENGEL C FINDEIS F ABSTREITER G DARHUBER AA BAUER G KOSOGOV AO WERNER P

Citation: P. Schittenhelm et al., SELF-ASSEMBLED GE DOTS - GROWTH, CHARACTERIZATION, ORDERING, AND APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1575-1581

POLARIZATION-DEPENDENT INTERSUBBAND ABSORPTION AND NORMAL-INCIDENCE INFRARED DETECTION IN P-TYPE SI SIGE QUANTUM-WELLS/

Authors: KRUCK P WEICHSELBAUM A HELM M FROMHERZ T BAUER G NUTZEL JF ABSTREITER G

Citation: P. Kruck et al., POLARIZATION-DEPENDENT INTERSUBBAND ABSORPTION AND NORMAL-INCIDENCE INFRARED DETECTION IN P-TYPE SI SIGE QUANTUM-WELLS/, Superlattices and microstructures, 23(1), 1998, pp. 61-66

X-RAY REFLECTIVITY INVESTIGATIONS OF THE INTERFACE MORPHOLOGY IN STRAINED SIGE SI MULTILAYERS/

Authors: HOLY V DARHUBER AA STANGL J BAUER G NUTZEL J ABSTREITER G

Citation: V. Holy et al., X-RAY REFLECTIVITY INVESTIGATIONS OF THE INTERFACE MORPHOLOGY IN STRAINED SIGE SI MULTILAYERS/, Semiconductor science and technology, 13(6), 1998, pp. 590-598

SPATIALLY-RESOLVED OPTICAL SPECTROSCOPY ON NATURAL QUANTUM DOTS

Authors: ZRENNER A SCHALLER A MARKMANN M HAGN M ARZBERGER M HENRY D ABSTREITER G BOHM G WEIMANN G

Citation: A. Zrenner et al., SPATIALLY-RESOLVED OPTICAL SPECTROSCOPY ON NATURAL QUANTUM DOTS, Applied surface science, 123, 1998, pp. 356-365

THE ORIGIN TO VARIOUS PL-BANDS IN SI GE STRAIN-SYMMETRIZED SUPERLATTICES/

Authors: OLAJOS J NILSSON S GAIL M ABSTREITER G

Citation: J. Olajos et al., THE ORIGIN TO VARIOUS PL-BANDS IN SI GE STRAIN-SYMMETRIZED SUPERLATTICES/, Microelectronic engineering, 43-4, 1998, pp. 165-170

OBLIQUE ROUGHNESS REPLICATION IN STRAINED SIGE SI MULTILAYERS/

Authors: HOLY V DARHUBER AA STANGL J BAUER G NUTZEL J ABSTREITER G

Citation: V. Holy et al., OBLIQUE ROUGHNESS REPLICATION IN STRAINED SIGE SI MULTILAYERS/, Physical review. B, Condensed matter, 57(19), 1998, pp. 12435-12442

ELECTRIC-FIELD EFFECTS ON EXCITONS IN QUANTUM DOTS

Authors: HELLER W BOCKELMANN U ABSTREITER G

Citation: W. Heller et al., ELECTRIC-FIELD EFFECTS ON EXCITONS IN QUANTUM DOTS, Physical review. B, Condensed matter, 57(11), 1998, pp. 6270-6273

LUMINESCENCE FROM ERBIUM-DOPED AND OXYGEN-DOPED SIGE GROWN BY MOLECULAR-BEAM EPITAXY

Authors: NEUFELD E STICHT A BRUNNER K ABSTREITER G BAY H BUCHAL C HOLZBRECHER H

Citation: E. Neufeld et al., LUMINESCENCE FROM ERBIUM-DOPED AND OXYGEN-DOPED SIGE GROWN BY MOLECULAR-BEAM EPITAXY, Thin solid films, 321, 1998, pp. 219-222

MOLECULAR-BEAM EPITAXY GROWTH AND THERMAL-STABILITY OF SI1-XGEX LAYERS ON EXTREMELY THIN SILICON-ON-INSULATOR SUBSTRATES

Authors: BRUNNER K DOBLER H ABSTREITER G SCHAFER H LUSTIG B

Citation: K. Brunner et al., MOLECULAR-BEAM EPITAXY GROWTH AND THERMAL-STABILITY OF SI1-XGEX LAYERS ON EXTREMELY THIN SILICON-ON-INSULATOR SUBSTRATES, Thin solid films, 321, 1998, pp. 245-250

CHEMICAL BEAM EPITAXY OF INTEGRATED 1.55 MU-M LASERS ON EXACT AND MISORIENTED (100)-INP SUBSTRATES

Authors: NUTSCH A DAHLHEIMER B DOHR N KRATZER H LUKAS R TORABI B TRANKLE G ABSTREITER G WEIMANN G

Citation: A. Nutsch et al., CHEMICAL BEAM EPITAXY OF INTEGRATED 1.55 MU-M LASERS ON EXACT AND MISORIENTED (100)-INP SUBSTRATES, Journal of crystal growth, 188(1-4), 1998, pp. 275-280

CHEMICAL BEAM EPITAXY OF GAINASP FOR LONG-WAVELENGTH LASERS

Authors: NUTSCH A KRATZER H TORABI B TRANKLE G ABSTREITER G WEIMANN G

Citation: A. Nutsch et al., CHEMICAL BEAM EPITAXY OF GAINASP FOR LONG-WAVELENGTH LASERS, Journal of crystal growth, 183(4), 1998, pp. 505-510

SIZE DISTRIBUTION OF COHERENTLY STRAINED INAS QUANTUM DOTS

Authors: SCHMIDT KH MEDEIROSRIBEIRO G KUNZE U ABSTREITER G HAGN M PETROFF PM

Citation: Kh. Schmidt et al., SIZE DISTRIBUTION OF COHERENTLY STRAINED INAS QUANTUM DOTS, Journal of applied physics, 84(8), 1998, pp. 4268-4272

DESIGN AND FABRICATION OF DOUBLE-MODULATION DOPED INALAS INGAAS/INAS HETEROJUNCTION FETS FOR HIGH-SPEED AND MILLIMETER-WAVE APPLICATIONS/

Authors: XU D HEISS HG KRAUS SA SEXL M BOHM G TRANKLE G WEIMANN G ABSTREITER G

Citation: D. Xu et al., DESIGN AND FABRICATION OF DOUBLE-MODULATION DOPED INALAS INGAAS/INAS HETEROJUNCTION FETS FOR HIGH-SPEED AND MILLIMETER-WAVE APPLICATIONS/, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 21-30

10.15MM DOUBLE-MODULATION DOPED INAS-INSERTED-CHANNEL MODFETS - GATE RECESS FOR OPTIMUM RF PERFORMANCES (VOL 33, PG 532, 1997)

Authors: XU D HEISS H KRAUS S SEXL M BOHM G TRANKLE G WEIMANN G ABSTREITER G

Citation: D. Xu et al., 10.15MM DOUBLE-MODULATION DOPED INAS-INSERTED-CHANNEL MODFETS - GATE RECESS FOR OPTIMUM RF PERFORMANCES (VOL 33, PG 532, 1997), Electronics Letters, 34(7), 1998, pp. 703-704

2-DIMENSIONAL ORDERING OF SELF-ASSEMBLED GE ISLANDS ON VICINAL SI(001) SURFACES WITH REGULAR RIPPLES

Authors: ZHU JH BRUNNER K ABSTREITER G

Citation: Jh. Zhu et al., 2-DIMENSIONAL ORDERING OF SELF-ASSEMBLED GE ISLANDS ON VICINAL SI(001) SURFACES WITH REGULAR RIPPLES, Applied physics letters, 73(5), 1998, pp. 620-622

ROOM-TEMPERATURE 1.54 MU-M ELECTROLUMINESCENCE FROM ERBIUM-DOPED SI SIGE WAVE-GUIDES/

Authors: NEUFELD E STICHT A LUIGART A BRUNNER K ABSTREITER G

Citation: E. Neufeld et al., ROOM-TEMPERATURE 1.54 MU-M ELECTROLUMINESCENCE FROM ERBIUM-DOPED SI SIGE WAVE-GUIDES/, Applied physics letters, 73(21), 1998, pp. 3061-3063

SPATIALLY-RESOLVED EXCITON TRAPPING IN A VOLTAGE-CONTROLLED LATERAL SUPERLATTICE

Authors: ZIMMERMANN S SCHEDELBECK G GOVOROV AO WIXFORTH A KOTTHAUS JP BICHLER M WEGSCHEIDER W ABSTREITER G

Citation: S. Zimmermann et al., SPATIALLY-RESOLVED EXCITON TRAPPING IN A VOLTAGE-CONTROLLED LATERAL SUPERLATTICE, Applied physics letters, 73(2), 1998, pp. 154-156

ELECTRICAL DETECTION OF OPTICALLY INDUCED CHARGE STORAGE IN SELF-ASSEMBLED INAS QUANTUM DOTS

Authors: FINLEY JJ SKALITZ M ARZBERGER M ZRENNER A BOHM G ABSTREITER G

Citation: Jj. Finley et al., ELECTRICAL DETECTION OF OPTICALLY INDUCED CHARGE STORAGE IN SELF-ASSEMBLED INAS QUANTUM DOTS, Applied physics letters, 73(18), 1998, pp. 2618-2620

OBSERVATION OF STEP BUNCHES IN UNITS OF 4 ML ON VICINAL SI(113) SURFACES

Authors: ZHU JH BRUNNER K ABSTREITER G

Citation: Jh. Zhu et al., OBSERVATION OF STEP BUNCHES IN UNITS OF 4 ML ON VICINAL SI(113) SURFACES, Applied physics letters, 73(17), 1998, pp. 2438-2440

HIGHLY REGULAR SELF-ORGANIZATION OF STEP BUNCHES DURING GROWTH OF SIGE ON SI(113)

Authors: DARHUBER AA ZHU J HOLY V STANGL J MIKULIK P BRUNNER K ABSTREITER G BAUER G

Citation: Aa. Darhuber et al., HIGHLY REGULAR SELF-ORGANIZATION OF STEP BUNCHES DURING GROWTH OF SIGE ON SI(113), Applied physics letters, 73(11), 1998, pp. 1535-1537

OBSERVATION OF (105) FACETED GE PYRAMIDS INCLINED TOWARDS VICINAL SI(001) SURFACES

Authors: ZHU JH BRUNNER K ABSTREITER G

Citation: Jh. Zhu et al., OBSERVATION OF (105) FACETED GE PYRAMIDS INCLINED TOWARDS VICINAL SI(001) SURFACES, Applied physics letters, 72(4), 1998, pp. 424-426

2S MM TRANSCONDUCTANCE INAS-INSERTED-CHANNEL MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH A VERY CLOSE GATE-TO-CHANNEL SEPARATION OF 14.5NM/

Authors: XU D HEISS H SEXL M KRAUS S BOHM G TRANKLE G WEIMANN G ABSTREITER G

Citation: D. Xu et al., 2S MM TRANSCONDUCTANCE INAS-INSERTED-CHANNEL MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH A VERY CLOSE GATE-TO-CHANNEL SEPARATION OF 14.5NM/, JPN J A P 2, 36(4B), 1997, pp. 470-472

HIGH-PERFORMANCE DOUBLE-MODULATION-DOPED INALAS INGAAS/INAS HFETS/

Authors: XU D HEISS H KRAUS S SEXL M BOHM G TRANKLE G WEIMANN G ABSTREITER G

Citation: D. Xu et al., HIGH-PERFORMANCE DOUBLE-MODULATION-DOPED INALAS INGAAS/INAS HFETS/, IEEE electron device letters, 18(7), 1997, pp. 323-326

X-RAY REFLECTIVITY RECIPROCAL SPACE MAPPING OF STRAINED SIGE SI SUPERLATTICES/

Authors: HOLY V DARHUBER AA STANGL J BAUER G NUTZEL JF ABSTREITER G

Citation: V. Holy et al., X-RAY REFLECTIVITY RECIPROCAL SPACE MAPPING OF STRAINED SIGE SI SUPERLATTICES/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 419-428

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