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Results:
1-22
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Results: 22
Authors:
AGAHI F
BALIGA A
LAU KM
ANDERSON NG
Citation: F. Agahi et al., DEPENDENCE OF POLARIZATION MODE AND THRESHOLD CURRENT ON TENSILE STRAIN IN ALGAAS GAASP QUANTUM-WELL LASERS/, Solid-state electronics, 41(4), 1997, pp. 647-649
Authors:
PEZESHKI B
AGAHI F
KASH JA
SANDSTROM RL
Citation: B. Pezeshki et al., ASYMMETRIC WAVE-GUIDE DEVICES WITH BURIED ALOX CLADDING LAYERS, IEEE photonics technology letters, 8(3), 1996, pp. 378-380
Authors:
BALIGA A
AGAHI F
ANDERSON NG
LAU KM
CADAMBI S
Citation: A. Baliga et al., TENSILE STRAIN AND THRESHOLD CURRENTS IN GAASP-ALGAAS SINGLE-QUANTUM-WELL LASERS, IEEE journal of quantum electronics, 32(1), 1996, pp. 29-37
Authors:
AGAHI F
PEZESHKI B
KASH JA
KISKER DW
Citation: F. Agahi et al., ASYMMETRIC FABRY-PEROT MODULATOR WITH A WAVE-GUIDE GEOMETRY, Electronics Letters, 32(3), 1996, pp. 210-212
Authors:
PEZESHKI B
AGAHI F
KASH JA
Citation: B. Pezeshki et al., A GRATINGLESS WAVELENGTH STABILIZED SEMICONDUCTOR-LASER, Applied physics letters, 69(19), 1996, pp. 2807-2809
Authors:
SANDSTROM RL
PEZESHKI B
AGAHI F
MARTEL R
CROCKETT JG
Citation: Rl. Sandstrom et al., MOVABLE-MASK REACTIVE ION ETCH PROCESS FOR THICKNESS CONTROL IN DEVICES, Applied physics letters, 69(15), 1996, pp. 2163-2165
Authors:
GUHA S
AGAHI F
PEZESHKI B
KASH JA
KISKER DW
BOJARCZUK NA
Citation: S. Guha et al., MICROSTRUCTURE OF ALGAAS-OXIDE HETEROLAYERS FORMED BY WET OXIDATION, Applied physics letters, 68(7), 1996, pp. 906-908
Authors:
PEZESHKI B
AGAHI F
KASH JA
WELSER JJ
WANG WK
Citation: B. Pezeshki et al., WAVELENGTH-SELECTIVE WAVE-GUIDE PHOTODETECTORS IN SILICON-ON-INSULATOR, Applied physics letters, 68(6), 1996, pp. 741-743
Authors:
AGAHI F
BALIGA A
LAU KM
ANDERSON NG
Citation: F. Agahi et al., TENSILE-STRAINED BARRIER GAASP GAAS SINGLE-QUANTUM-WELL LASERS/, Applied physics letters, 68(26), 1996, pp. 3778-3780
Authors:
LUTZ CR
AGAHI F
LAU KM
Citation: Cr. Lutz et al., RESONANT-TUNNELING INJECTION QUANTUM-WELL LASERS, IEEE photonics technology letters, 7(6), 1995, pp. 596-598
Authors:
AGAHI F
LAU KM
CHOI HK
BALIGA A
ANDERSON NG
Citation: F. Agahi et al., HIGH-PERFORMANCE 770-NM ALGAAS-GAASP TENSILE-STRAINED QUANTUM-WELL LASER-DIODES, IEEE photonics technology letters, 7(2), 1995, pp. 140-143
Authors:
ANDERSON NG
AGAHI F
BALIGA A
LAU KM
Citation: Ng. Anderson et al., VALENCE-BAND OFFSETS IN STRAINED GAAS1-XPX GAAS HETEROJUNCTIONS/, Journal of electronic materials, 24(6), 1995, pp. 713-717
Authors:
KASH JA
PEZESHKI B
AGAHI F
BOJARCZUK NA
Citation: Ja. Kash et al., RECOMBINATION IN GAAS AT THE ALAS OXIDE GAAS INTERFACE, Applied physics letters, 67(14), 1995, pp. 2022-2024
Authors:
PEZESHKI B
KASH JA
AGAHI F
Citation: B. Pezeshki et al., WAVE-GUIDE VERSION OF AN ASYMMETRIC FABRY-PEROT MODULATOR, Applied physics letters, 67(12), 1995, pp. 1662-1664
Authors:
HANSON CM
BASCO R
AGAHI F
LAU KM
LAREAU RT
MONAHAN TP
Citation: Cm. Hanson et al., COMPOSITIONAL INHOMOGENEITY AT THE EPITAXIAL LAYER AND SUBSTRATE INTERFACE OF ALGAAS GAAS HETEROSTRUCTURES/, Journal of electronic materials, 23(7), 1994, pp. 649-652
Authors:
AGAHI F
LUTZ CR
LAU KM
Citation: F. Agahi et al., IMPROVEMENT OF GAS-SWITCHING ABRUPTNESS FOR ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 139(3-4), 1994, pp. 344-350
Authors:
AGAHI F
LAU KM
KOTELES ES
BALIGA A
ANDERSON NG
Citation: F. Agahi et al., GAAS1-XPX GAAS QUANTUM-WELL STRUCTURES WITH TENSILE-STRAINED BARRIERS/, IEEE journal of quantum electronics, 30(2), 1994, pp. 459-465
Authors:
YANG JX
AGAHI F
DAI D
MUSANTE CF
GRAMMER W
LAU KM
YNGVESSON KS
Citation: Jx. Yang et al., WIDE-BANDWIDTH ELECTRON BOLOMETRIC MIXERS - A 2DEG PROTOTYPE AND POTENTIAL FOR LOW-NOISE THZ RECEIVERS, IEEE transactions on microwave theory and techniques, 41(4), 1993, pp. 581-589
Authors:
GOMATAM BN
ANDERSON NG
AGAHI F
MUSANTE CF
LAU KM
Citation: Bn. Gomatam et al., COMPARISON OF ELECTROABSORPTION IN TENSILE-STRAINED AND LATTICE-MATCHED GAAS(P) ALGAAS QUANTUM-WELLS/, Applied physics letters, 63(26), 1993, pp. 3616-3618
Authors:
BASCO R
AGAHI F
KEI ML
Citation: R. Basco et al., ULTRAHIGH MOBILITY 2-DIMENSIONAL ELECTRON-GAS IN ALXGA1-XAS GAAS HETEROSTRUCTURES BY ORGANOMETALLIC VAPOR-PHASE EPITAXY/, Applied physics letters, 63(14), 1993, pp. 1960-1962
Authors:
GOMATAM BN
ANDERSON NG
AGAHI F
MUSANTE CF
LAU KM
Citation: Bn. Gomatam et al., FIELD-INDUCED ABSORPTION-EDGE MERGING IN TENSILE-STRAINED GAASP QUANTUM-WELLS, Applied physics letters, 62(26), 1993, pp. 3473-3475
EVALUATION OF HORIZONTAL AND VERTICAL DIFFERENCES IN FACIAL PROFILES BY ORTHODONTISTS AND LAY PEOPLE
Authors:
ROMANI KL
AGAHI F
NANDA R
ZERNIK JH
Citation: Kl. Romani et al., EVALUATION OF HORIZONTAL AND VERTICAL DIFFERENCES IN FACIAL PROFILES BY ORTHODONTISTS AND LAY PEOPLE, The Angle orthodontist, 63(3), 1993, pp. 175-182
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