Authors:
CHOI WK
CHAN YM
AH LK
LOH FC
TAN KL
RAMAM A
Citation: Wk. Choi et al., EFFECT OF RAPID THERMAL ANNEALING ON THE STRUCTURAL AND ELECTRICAL-PROPERTIES OF A SILICON-SILICON OXIDE SYSTEM, Journal of applied physics, 78(7), 1995, pp. 4390-4394
Citation: Ch. Ling et al., STUDY OF RF-SPUTTERED YTTRIUM-OXIDE FILMS ON SILICON BY CAPACITANCE MEASUREMENTS, Journal of applied physics, 77(12), 1995, pp. 6350-6353
Citation: Ch. Ling et al., OBSERVATION OF CURRENT SPIKES IN THIN OXIDE MOS CAPACITOR (VOL 30, PG2077, 1994), Electronics Letters, 31(2), 1995, pp. 144-144
Citation: Wk. Choi et al., EXPLORATORY OBSERVATIONS OF EFFECT OF RAPID THERMAL-PROCESSING ON SILICON MINORITY-CARRIER LIFETIME USING LASER MICROWAVE PHOTOCONDUCTANCE METHOD, Journal of the Electrochemical Society, 142(5), 1995, pp. 1651-1653
Citation: Ch. Ling et al., HOT-ELECTRON DEGRADATION IN NMOSFETS - RESULTS FROM TEMPERATURE ANNEAL, I.E.E.E. transactions on electron devices, 41(7), 1994, pp. 1303-1305
Citation: Ch. Ling et al., LOGARITHMIC TIME-DEPENDENCE OF PMOSFET DEGRADATION OBSERVED FROM GATECAPACITANCE, Electronics Letters, 29(4), 1993, pp. 418-420