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Results: 1-14 |
Results: 14
CHARACTERISTICS OF DIODE STRUCTURES BASED ON THE P-PBTE(GA)-IN CONTACT
Authors: AKIMOV BA BOGDANOV EV BOGOYAVLENSKIY VA RYABOVA LI SHTANOV VI
Citation: Ba. Akimov et al., CHARACTERISTICS OF DIODE STRUCTURES BASED ON THE P-PBTE(GA)-IN CONTACT, Infrared physics & technology, 39(5), 1998, pp. 287-292
QUANTUM OSCILLATORY PROPERTIES OF THE SEMIMAGNETIC SEMICONDUCTOR PBTE(CR)
Authors: AKIMOV BA LVOVA NA RYABOVA LI
Citation: Ba. Akimov et al., QUANTUM OSCILLATORY PROPERTIES OF THE SEMIMAGNETIC SEMICONDUCTOR PBTE(CR), Physical review. B, Condensed matter, 58(16), 1998, pp. 10430-10434
ELECTRICAL-CONDUCTIVITY OF POLYCRYSTALLINE SNO2(CU) FILMS AND THEIR SENSITIVITY TO HYDROGEN-SULFIDE
Authors: AKIMOV BA ALBUL AV GASKOV AM ILIN VY RUMYANTSEVA MN RYABOVA LI LABEAU M
Citation: Ba. Akimov et al., ELECTRICAL-CONDUCTIVITY OF POLYCRYSTALLINE SNO2(CU) FILMS AND THEIR SENSITIVITY TO HYDROGEN-SULFIDE, Semiconductors, 31(4), 1997, pp. 335-339
ELECTROTHERMAL INSTABILITIES INDUCED BY A METASTABLE ELECTRONIC-STATEIN PBTE(GA)
Authors: AKIMOV BA BRANDT NB ALBUL AV RYABOVA LI
Citation: Ba. Akimov et al., ELECTROTHERMAL INSTABILITIES INDUCED BY A METASTABLE ELECTRONIC-STATEIN PBTE(GA), Semiconductors, 31(2), 1997, pp. 100-102
PROPERTIES OF P-PBTE (GA) BASED DIODE STRUCTURES
Authors: AKIMOV BA BOGDANOV EV BOGOYAVLENSKII VA RYABOVA LI SHTANOV VI
Citation: Ba. Akimov et al., PROPERTIES OF P-PBTE (GA) BASED DIODE STRUCTURES, Semiconductors, 31(12), 1997, pp. 1237-1240
PHOTOCONDUCTIVITY KINETICS IN PB1-XMNXTE(IN) SOLID-SOLUTIONS WITH VARYING COMPOSITION
Authors: AKIMOV BA LVOVA NA RYABOVA LI
Citation: Ba. Akimov et al., PHOTOCONDUCTIVITY KINETICS IN PB1-XMNXTE(IN) SOLID-SOLUTIONS WITH VARYING COMPOSITION, Semiconductors, 30(9), 1996, pp. 861-863
KINETICS OF THE PHOTOCONDUCTIVITY IN PBTE(GA)
Authors: AKIMOV BA ALBUL AV RYABOVA LI
Citation: Ba. Akimov et al., KINETICS OF THE PHOTOCONDUCTIVITY IN PBTE(GA), Semiconductors, 29(12), 1995, pp. 1125-1130
PHOTOCONDUCTIVITY SPECTRA AND THE PROBLEM OF IMPURITY STATES IN PBTE(GA)
Authors: AKIMOV BA ALBUL AV ILIN VY NEKRASOV MY RYABOV LI
Citation: Ba. Akimov et al., PHOTOCONDUCTIVITY SPECTRA AND THE PROBLEM OF IMPURITY STATES IN PBTE(GA), Semiconductors, 29(11), 1995, pp. 1051-1055
LOW-TEMPERATURE SWITCHING IN PBTE-GA UNDER PRESSURE
Authors: AKIMOV BA ALBUL AV BOGDANOV EV ILIN VY
Citation: Ba. Akimov et al., LOW-TEMPERATURE SWITCHING IN PBTE-GA UNDER PRESSURE, Semiconductors, 28(2), 1994, pp. 140-142
LASER-DEPOSITED PBTE(GA) FILMS
Authors: AKIMOV BA GASKOV AM GLONTY VN IVANCHIK II PUTILIN FN RYABOVA LI
Citation: Ba. Akimov et al., LASER-DEPOSITED PBTE(GA) FILMS, Physica status solidi. a, Applied research, 142(1), 1994, pp. 85-89
INFLUENCE OF DOPING WITH GALLIUM ON THE PROPERTIES OF PB1-XGEXTE SOLID-SOLUTIONS
Authors: AKIMOV BA ALBUL AV IVANCHIK II RYABOVA LI SLYNKO EI KHOKHLOV DR
Citation: Ba. Akimov et al., INFLUENCE OF DOPING WITH GALLIUM ON THE PROPERTIES OF PB1-XGEXTE SOLID-SOLUTIONS, Semiconductors, 27(2), 1993, pp. 194-196
CARRIER TRANSPORT AND NONEQUILIBRIUM PHENOMENA IN DOPED PBTE AND RELATED MATERIALS
Authors: AKIMOV BA DMITRIEV AV KHOKHLOV DR RYABOVA LI
Citation: Ba. Akimov et al., CARRIER TRANSPORT AND NONEQUILIBRIUM PHENOMENA IN DOPED PBTE AND RELATED MATERIALS, Physica status solidi. a, Applied research, 137(1), 1993, pp. 9-55
AN OPERATING REGIME BASED ON SWITCHING EFFECTS FOR PHOTODETECTORS OF PB1-XSNXTE(IN) MBE FILMS
Authors: AKIMOV BA RYABOVA LI SHUMSKIY VN PETIKOV NI
Citation: Ba. Akimov et al., AN OPERATING REGIME BASED ON SWITCHING EFFECTS FOR PHOTODETECTORS OF PB1-XSNXTE(IN) MBE FILMS, Infrared physics, 34(4), 1993, pp. 375-378
CURRENT-VOLTAGE CHARACTERISTICS OF PBTE(GA) ALLOYS AT LOW-TEMPERATURES
Authors: AKIMOV BA ALBUL AV BOGDANOV EV
Citation: Ba. Akimov et al., CURRENT-VOLTAGE CHARACTERISTICS OF PBTE(GA) ALLOYS AT LOW-TEMPERATURES, Inorganic materials, 28(12), 1992, pp. 1938-1941
Risultati: 1-14 |