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Results:
1-8
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Results: 8
Authors:
BELKOUCH S
NGUYEN TK
LANDSBERGER LM
AKTIK C
JEAN C
KAHRIZI M
Citation: S. Belkouch et al., INTERFACE STATES DISTRIBUTION IN ELECTRICAL STRESSED OXYNITRIDED GATE-OXIDE, Journal of the Electrochemical Society, 145(7), 1998, pp. 2489-2493
Authors:
BELKOUCH S
AKTIK C
XU H
AMEZIANE EL
Citation: S. Belkouch et al., GAAS SURFACE CHEMICAL PASSIVATION BY (NH4)(2)S+SE AND THE EFFECT OF ANNEALING TREATMENTS, Solid-state electronics, 39(4), 1996, pp. 507-510
Authors:
JORIO A
CARLONE C
PARENTEAU M
AKTIK C
ROWELL NL
Citation: A. Jorio et al., FORMATION OF EL2, AS(GA) AND U-BAND IN IRRADIATED GAAS - EFFECTS OF ANNEALING, Journal of applied physics, 80(3), 1996, pp. 1364-1369
Authors:
DUBUC C
BEAUVAIS J
AKTIK C
Citation: C. Dubuc et al., LOW-TEMPERATURE LOW-PRESSURE MOCVD ALXGA1-XAS LAYER GROWN AS A DIELECTRIC FOR GAAS MIS DEVICES, Electronics Letters, 31(25), 1995, pp. 2219-2220
Authors:
AKTIK C
BELKOUCH S
Citation: C. Aktik et S. Belkouch, A SIMPLE VELOCITY MODEL FOR LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 67(6), 1995, pp. 869-871
Authors:
BELKOUCH S
JEAN C
AKTIK C
AMEZIANE EL
Citation: S. Belkouch et al., INTERFACE STATE BUILDUP BY HIGH-FIELD STRESSING IN VARIOUS METAL-OXIDE-SEMICONDUCTOR INSULATORS USING DEEP-LEVEL TRANSIENT SPECTROSCOPY, Applied physics letters, 67(4), 1995, pp. 530-532
Authors:
XU HQ
BELKOUCH S
AKTIK C
RASMUSSEN W
Citation: Hq. Xu et al., SE CHEMICAL PASSIVATION AND ANNEALING TREATMENT FOR GAAS SCHOTTKY DIODE, Applied physics letters, 66(16), 1995, pp. 2125-2127
Authors:
AKTIK C
BEERENS J
BLAIN S
BSIESY A
Citation: C. Aktik et al., EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE PREPARED BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR DEPOSITION AT LOW-TEMPERATURES, Canadian journal of physics, 70(10-11), 1992, pp. 893-897
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