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Results: 1-8 |
Results: 8

Authors: BELKOUCH S NGUYEN TK LANDSBERGER LM AKTIK C JEAN C KAHRIZI M
Citation: S. Belkouch et al., INTERFACE STATES DISTRIBUTION IN ELECTRICAL STRESSED OXYNITRIDED GATE-OXIDE, Journal of the Electrochemical Society, 145(7), 1998, pp. 2489-2493

Authors: BELKOUCH S AKTIK C XU H AMEZIANE EL
Citation: S. Belkouch et al., GAAS SURFACE CHEMICAL PASSIVATION BY (NH4)(2)S+SE AND THE EFFECT OF ANNEALING TREATMENTS, Solid-state electronics, 39(4), 1996, pp. 507-510

Authors: JORIO A CARLONE C PARENTEAU M AKTIK C ROWELL NL
Citation: A. Jorio et al., FORMATION OF EL2, AS(GA) AND U-BAND IN IRRADIATED GAAS - EFFECTS OF ANNEALING, Journal of applied physics, 80(3), 1996, pp. 1364-1369

Authors: DUBUC C BEAUVAIS J AKTIK C
Citation: C. Dubuc et al., LOW-TEMPERATURE LOW-PRESSURE MOCVD ALXGA1-XAS LAYER GROWN AS A DIELECTRIC FOR GAAS MIS DEVICES, Electronics Letters, 31(25), 1995, pp. 2219-2220

Authors: AKTIK C BELKOUCH S
Citation: C. Aktik et S. Belkouch, A SIMPLE VELOCITY MODEL FOR LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 67(6), 1995, pp. 869-871

Authors: BELKOUCH S JEAN C AKTIK C AMEZIANE EL
Citation: S. Belkouch et al., INTERFACE STATE BUILDUP BY HIGH-FIELD STRESSING IN VARIOUS METAL-OXIDE-SEMICONDUCTOR INSULATORS USING DEEP-LEVEL TRANSIENT SPECTROSCOPY, Applied physics letters, 67(4), 1995, pp. 530-532

Authors: XU HQ BELKOUCH S AKTIK C RASMUSSEN W
Citation: Hq. Xu et al., SE CHEMICAL PASSIVATION AND ANNEALING TREATMENT FOR GAAS SCHOTTKY DIODE, Applied physics letters, 66(16), 1995, pp. 2125-2127

Authors: AKTIK C BEERENS J BLAIN S BSIESY A
Citation: C. Aktik et al., EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE PREPARED BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR DEPOSITION AT LOW-TEMPERATURES, Canadian journal of physics, 70(10-11), 1992, pp. 893-897
Risultati: 1-8 |