Citation: B. Alkan, NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(7), 1996, pp. 885-888
Citation: B. Alkan et al., DISLOCATION SCATTERING OF ELECTRONS IN PLASTICALLY DEFORMED GERMANIUM, Semiconductor science and technology, 11(7), 1996, pp. 1046-1050
Citation: B. Unal et B. Alkan, THE EFFECT OF DISORDER ON THE ELECTRONIC STATES OF 2-DIMENSIONAL SYSTEMS, Journal of physics. Condensed matter, 7(18), 1995, pp. 3591-3595
Citation: B. Alkan et B. Unal, ANDERSON TRANSITION IN DILUTE SYSTEMS WITH PURE EXPONENTIAL INTERACTIONS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(2), 1995, pp. 209-212
Citation: B. Alkan et al., ELECTRON-MOBILITY IN GAAS DUE TO PIEZOELECTRIC SCATTERING, Semiconductor science and technology, 10(11), 1995, pp. 1458-1462
Citation: B. Alkan et al., CALCULATION OF THE MOBILITY OF PURE NONPOLAR SEMICONDUCTORS BY A NEW METHOD, Journal of physics. Condensed matter, 6(25), 1994, pp. 4727-4736
Citation: H. Aktas et al., THE USE OF THE CORRELATION-FUNCTION TECHNIQUE FOR THE ANDERSON TRANSITION, Journal of physics. Condensed matter, 5(45), 1993, pp. 8563-8568
Citation: B. Unal et B. Alkan, CALCULATION OF RESISTIVITIES OF LIQUID-METALS AND ALLOYS BY A NEW METHOD, Journal of the Physical Society of Japan, 62(7), 1993, pp. 2425-2430