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Results: 1-25/45
Authors:
DEGER C
BORN E
ANGERER H
AMBACHER O
STUTZMANN M
HORNSTEINER J
RIHA E
FISCHERAUER G
Citation: C. Deger et al., SOUND-VELOCITY OF ALXGA1-XN THIN-FILMS OBTAINED BY SURFACE-ACOUSTIC-WAVE MEASUREMENTS, Applied physics letters, 72(19), 1998, pp. 2400-2402
Authors:
AMBACHER O
FREUDENBERG F
DIMITROV R
ANGERER H
STUTZMANN M
Citation: O. Ambacher et al., NITROGEN EFFUSION AND SELF-DIFFUSION IN (GAN)-N-14 (GAN)-N-15 ISOTOPEHETEROSTRUCTURES/, JPN J A P 1, 37(5A), 1998, pp. 2416-2421
Authors:
AMBACHER O
BRUNNER D
DIMITROV R
STUTZMANN M
SOHMER A
SCHOLZ F
Citation: O. Ambacher et al., ABSORPTION OF INGAN SINGLE QUANTUM-WELLS DETERMINED BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY, JPN J A P 1, 37(3A), 1998, pp. 745-752
Authors:
KAISER S
PREIS H
GEBHARDT W
AMBACHER O
ANGERER H
STUTZMANN M
ROSENAUER A
GERTHSEN D
Citation: S. Kaiser et al., QUANTITATIVE TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATION OF THE RELAXATION BY MISFIT DISLOCATIONS CONFINED AT THE INTERFACE OF GAN AL2O3(0001)/, JPN J A P 1, 37(1), 1998, pp. 84-89
Authors:
METZGER T
HOPLER R
BORN E
AMBACHER O
STUTZMANN M
STOMMER R
SCHUSTER M
GOBEL H
CHRISTIANSEN S
ALBRECHT M
STRUNK HP
Citation: T. Metzger et al., DEFECT STRUCTURE OF EPITAXIAL GAN FILMS DETERMINED BY TRANSMISSION ELECTRON-MICROSCOPY AND TRIPLE-AXIS X-RAY-DIFFRACTOMETRY, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 77(4), 1998, pp. 1013-1025
Authors:
EYCKELER M
MONCH W
KAMPEN TU
DIMITROV R
AMBACHER O
STUTZMANN M
Citation: M. Eyckeler et al., NEGATIVE ELECTRON-AFFINITY OF CESIATED P-GAN(0001) SURFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2224-2228
Authors:
FRANK AC
STOWASSER F
STARK O
KWAK HT
SUSSEK H
RUPP A
PRITZKOW H
AMBACHER O
GIERSIG M
FISCHER RA
Citation: Ac. Frank et al., MICROSTRUCTURAL CHARACTERIZATION OF NANOCRYSTALLINE GAN PREPARED BY DETONATIONS OF GALLIUM AZIDES, Advanced materials for optics and electronics, 8(3), 1998, pp. 135-146
Authors:
STUTZMANN M
AMBACHER O
ANGERER H
NEBEL CE
ROHRER E
Citation: M. Stutzmann et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF ALGAN - A COMPARISON WITH CVDDIAMOND, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 123-128
Authors:
LOA I
GRONEMEYER S
THOMSEN C
AMBACHER O
SCHIKORA D
AS DJ
Citation: I. Loa et al., COMPARATIVE DETERMINATION OF ABSOLUTE RAMAN-SCATTERING EFFICIENCIES AND APPLICATION TO GAN, Journal of Raman spectroscopy, 29(4), 1998, pp. 291-295
Authors:
BRANDT MS
HERBST P
ANGERER H
AMBACHER O
STUTZMANN M
Citation: Ms. Brandt et al., THERMOPOWER INVESTIGATION OF N-TYPE AND P-TYPE GAN, Physical review. B, Condensed matter, 58(12), 1998, pp. 7786-7791
Authors:
PAU S
LIU ZX
KUHL J
RINGLING J
GRAHN HT
KHAN MA
SUN CJ
AMBACHER O
STUTZMANN M
Citation: S. Pau et al., TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF EXCITONS IN HEXAGONAL GAN LAYERS GROWN ON SAPPHIRE, Physical review. B, Condensed matter, 57(12), 1998, pp. 7066-7070
Authors:
WETHKAMP T
WILMERS K
ESSER N
RICHTER W
AMBACHER O
ANGERER H
JUNGK G
JOHNSON RL
CARDONA M
Citation: T. Wethkamp et al., SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS OF ALXGA1-XN IN THE ENERGY-RANGE 3-25EV, Thin solid films, 313, 1998, pp. 745-750
Authors:
DIMITROV R
WITTMER L
FELSL HP
MITCHELL A
AMBACHER O
STUTZMANN M
Citation: R. Dimitrov et al., CARRIER CONFINEMENT IN ALGAN GAN HETEROSTRUCTURES GROWN BY PLASMA-INDUCED MOLECULAR-BEAM EPITAXY/, Physica status solidi. a, Applied research, 168(2), 1998, pp. 7-8
Authors:
FRANK AC
STOWASSER F
MISKYS CR
AMBACHER O
GIERSIG M
FISCHER RA
Citation: Ac. Frank et al., NANOSCALE HEXAGONAL GALLIUM NITRIDE FROM SINGLE-MOLECULE PRECURSORS -MICROSTRUCTURE AND CRYSTALLITE SIZE-DEPENDENT PHOTOLUMINESCENCE, Physica status solidi. a, Applied research, 165(1), 1998, pp. 239-243
Authors:
AMBACHER O
Citation: O. Ambacher, GROWTH AND APPLICATIONS OF GROUP-III NITRIDES, Journal of physics. D, Applied physics (Print), 31(20), 1998, pp. 2653-2710
Authors:
SCHOLZ F
OFF J
SOHMER A
SYGANOW V
DORNEN A
AMBACHER O
Citation: F. Scholz et al., MOVPE OF GAINN HETEROSTRUCTURES AND QUANTUM-WELLS, Journal of crystal growth, 190, 1998, pp. 8-12
Authors:
HOLST J
ECKEY L
HOFFMANN A
AMBACHER O
STUTZMANN M
Citation: J. Holst et al., THE INFLUENCE OF THE AL-CONTENT ON THE OPTICAL GAIN IN ALGAN HETEROSTRUCTURES, Journal of crystal growth, 190, 1998, pp. 692-695
Authors:
KAZIMIROV A
SCHERB G
ZEGENHAGEN J
LEE TL
BEDZYK MJ
KELLY MK
ANGERER H
AMBACHER O
Citation: A. Kazimirov et al., POLARITY DETERMINATION OF A GAN THIN-FILM ON SAPPHIRE (0001) WITH X-RAY STANDING WAVES, Journal of applied physics, 84(3), 1998, pp. 1703-1705
Authors:
NEUBAUER B
ROSENAUER A
GERTHSEN D
AMBACHER O
STUTZMANN M
Citation: B. Neubauer et al., ANALYSIS OF COMPOSITION FLUCTUATIONS ON AN ATOMIC-SCALE IN AL0.25GA0.75N BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY, Applied physics letters, 73(7), 1998, pp. 930-932
Authors:
FRANK AC
STOWASSER F
SUSSEK H
PRITZKOW H
MISKYS CR
AMBACHER O
GIERSIG M
FISCHER RA
Citation: Ac. Frank et al., DETONATIONS OF GALLIUM AZIDES - A SIMPLE ROUTE TO HEXAGONAL GAN NANOCRYSTALS, Journal of the American Chemical Society, 120(14), 1998, pp. 3512-3513
Authors:
STUTZMANN M
AMBACHER O
CROS A
BRANDT MS
ANGERER H
DIMITROV R
REINACHER N
METZGER T
HOPLER R
BRUNNER D
FREUDENBERG F
HANDSCHUH R
DEGER C
Citation: M. Stutzmann et al., PROPERTIES AND APPLICATIONS OF MBE GROWN ALGAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 212-218
Authors:
ZHANG JM
RUF T
CARDONA M
AMBACHER O
STUTZMANN M
WAGNER JM
BECHSTEDT F
Citation: Jm. Zhang et al., RAMAN-SPECTRA OF ISOTOPIC GAN, Physical review. B, Condensed matter, 56(22), 1997, pp. 14399-14406
Authors:
CROS A
ANGERER H
AMBACHER O
STUTZMANN M
HOPLER R
METZGER T
Citation: A. Cros et al., RAMAN-STUDY OF THE OPTICAL PHONONS IN ALXGA1-XN ALLOYS, Solid state communications, 104(1), 1997, pp. 35-39
Authors:
METZGER T
HOPLER R
BORN E
CHRISTIANSEN S
ALBRECHT M
STRUNK HP
AMBACHER O
STUTZMANN M
STOMMER R
SCHUSTER M
GOBEL H
Citation: T. Metzger et al., COHERENT X-RAY-SCATTERING PHENOMENON IN HIGHLY DISORDERED EPITAXIAL ALN FILMS, Physica status solidi. a, Applied research, 162(2), 1997, pp. 529-535
Authors:
KELLY MK
AMBACHER O
DIMITROV R
HANDSCHUH R
STUTZMANN M
Citation: Mk. Kelly et al., OPTICAL PROCESS FOR LIFTOFF OF GROUP-III NITRIDE FILMS, Physica status solidi. a, Applied research, 159(1), 1997, pp. 3-4