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Results: 1-12 |
Results: 12
BAND TAILS AND THEIR INFLUENCE ON THE PERFORMANCE OF BIPOLAR SIGE DEVICES AT LOW-TEMPERATURES
Authors: SOKOLIC S FERK B AMON S
Citation: S. Sokolic et al., BAND TAILS AND THEIR INFLUENCE ON THE PERFORMANCE OF BIPOLAR SIGE DEVICES AT LOW-TEMPERATURES, Journal de physique. IV, 8(P3), 1998, pp. 113-116
SIGE HBT SIMULATION-BASED ON M(P) (T, N-A, X(GE)) NUMERICAL-MODEL HEM
Authors: SOKOLIC S FERK B AMON S
Citation: S. Sokolic et al., SIGE HBT SIMULATION-BASED ON M(P) (T, N-A, X(GE)) NUMERICAL-MODEL HEM, Journal de physique. IV, 8(P3), 1998, pp. 117-120
INVESTIGATION OF EFFICIENT TERMINATION STRUCTURE FOR IMPROVED BREAKDOWN PROPERTIES OF SEMICONDUCTOR RADIATION DETECTORS
Authors: KRIZAJ D RESNIK D VRTACNIK D AMON S CINDRO V
Citation: D. Krizaj et al., INVESTIGATION OF EFFICIENT TERMINATION STRUCTURE FOR IMPROVED BREAKDOWN PROPERTIES OF SEMICONDUCTOR RADIATION DETECTORS, IEEE transactions on nuclear science, 45(3), 1998, pp. 379-384
FOXFET STRUCTURE - DEVICE MODELING AND ANALYSIS
Authors: KRIZAJ D BONVICINI W AMON S
Citation: D. Krizaj et al., FOXFET STRUCTURE - DEVICE MODELING AND ANALYSIS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 384(2-3), 1997, pp. 482-490
SPIRAL JUNCTION TERMINATION
Authors: KRIZAJ D AMON S MINGUES C CHARITAT G
Citation: D. Krizaj et al., SPIRAL JUNCTION TERMINATION, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 2002-2010
INFLUENCE OF FERMI-DIRAC STATISTICS ON COLLECTOR CURRENT OF NPN SIGE HBT AT LOW-TEMPERATURES
Authors: SOKOLIC S AMON S
Citation: S. Sokolic et S. Amon, INFLUENCE OF FERMI-DIRAC STATISTICS ON COLLECTOR CURRENT OF NPN SIGE HBT AT LOW-TEMPERATURES, Journal de physique. IV, 6(C3), 1996, pp. 131-136
TEMPERATURE-DEPENDENT MODEL FOR HOLE EFFECTIVE-MASS IN HEAVILY-DOPED P-TYPE SIGE
Authors: SOKOLIC S AMON S
Citation: S. Sokolic et S. Amon, TEMPERATURE-DEPENDENT MODEL FOR HOLE EFFECTIVE-MASS IN HEAVILY-DOPED P-TYPE SIGE, Journal de physique. IV, 6(C3), 1996, pp. 137-142
A NEW ANALYTICAL MODEL FOR DETERMINATION OF BREAKDOWN VOLTAGE OF RESURF STRUCTURES
Authors: KRIZAJ D CHARITAT G AMON S
Citation: D. Krizaj et al., A NEW ANALYTICAL MODEL FOR DETERMINATION OF BREAKDOWN VOLTAGE OF RESURF STRUCTURES, Solid-state electronics, 39(9), 1996, pp. 1353-1358
DIASTOLIC BLOOD-PRESSURE INCREASED IN NEONATES FED FORMULA DISSOLVED IN TAP WATER (HIGH SODIUM) INSTEAD OF LOW-SODIUM MINERAL-WATER
Authors: DOLFIN T POMERANTZ A ELIAKIM A REGEV R LITMANOWITZ I AMON S WOLACH B
Citation: T. Dolfin et al., DIASTOLIC BLOOD-PRESSURE INCREASED IN NEONATES FED FORMULA DISSOLVED IN TAP WATER (HIGH SODIUM) INSTEAD OF LOW-SODIUM MINERAL-WATER, Pediatric research, 39(4), 1996, pp. 1832-1832
BLUE-LIGHT RECEPTION IN PHYCOMYCES - RED-LIGHT SENSITIZATION IN MADC MUTANTS
Authors: GALLAND P AMON S SENGER H RUSSO VEA
Citation: P. Galland et al., BLUE-LIGHT RECEPTION IN PHYCOMYCES - RED-LIGHT SENSITIZATION IN MADC MUTANTS, Botanica acta, 108(4), 1995, pp. 344-350
DESIGN OF AN N-CHANNEL JFET ON HIGH-RESISTIVITY SILICON FOR RADIATION-DETECTOR ON-CHIP FRONT-END ELECTRONICS
Authors: DALLABETTA GF VERZELLESI G PIGNATEL GU AMON S BOSCARDIN M SONCINI G
Citation: Gf. Dallabetta et al., DESIGN OF AN N-CHANNEL JFET ON HIGH-RESISTIVITY SILICON FOR RADIATION-DETECTOR ON-CHIP FRONT-END ELECTRONICS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 365(2-3), 1995, pp. 473-479
MODELING HEAVY DOPING EFFECTS FOR LOW-TEMPERATURE DEVICE SIMULATIONS
Authors: SOKOLIC S AMON S
Citation: S. Sokolic et S. Amon, MODELING HEAVY DOPING EFFECTS FOR LOW-TEMPERATURE DEVICE SIMULATIONS, Journal de physique. IV, 4(C6), 1994, pp. 133-138
Risultati: 1-12 |