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Results: 1-9 |
Results: 9
DETERMINATION OF ABSORPTION-COEFFICIENTS AND IMPURITY SPECIES IN SEMICONDUCTORS FROM PHOTOCONDUCTIVITY SPECTRA
Authors: ANDREEV BA GOLUBEV VG KROPOTOV GI MAKSIMOV GA SHMAGIN VB
Citation: Ba. Andreev et al., DETERMINATION OF ABSORPTION-COEFFICIENTS AND IMPURITY SPECIES IN SEMICONDUCTORS FROM PHOTOCONDUCTIVITY SPECTRA, Journal of analytical chemistry, 53(11), 1998, pp. 1046-1052
SILICON WITH EXTREMELY LOW MILLIMETER-WAVE DIELECTRIC LOSS
Authors: ANDREEV BA KOTEREVA TV PARSHIN VV SHMAGINN VB
Citation: Ba. Andreev et al., SILICON WITH EXTREMELY LOW MILLIMETER-WAVE DIELECTRIC LOSS, Inorganic materials, 33(11), 1997, pp. 1100-1102
OXYGEN AGGREGATION IN CZOCHRALSKI-GROWN SILICON HEAT-TREATED AT 450 DEGREES-C UNDER COMPRESSIVE STRESS
Authors: EMTSEV VV ANDREEV BA MISIUK A JUNG W SCHMALZ K
Citation: Vv. Emtsev et al., OXYGEN AGGREGATION IN CZOCHRALSKI-GROWN SILICON HEAT-TREATED AT 450 DEGREES-C UNDER COMPRESSIVE STRESS, Applied physics letters, 71(2), 1997, pp. 264-266
ON THE INTRUSION OF COPPER INTO GERMANIUM SINGLE-CRYSTAL DURING ITS GROWING WITH CZOCHRALSKI METHOD
Authors: DEVYATYKH GG ANDREEV BA GAVVA VA GORDEEV DM GUSEV AV KOTEREVA TV SHMAGIN VB
Citation: Gg. Devyatykh et al., ON THE INTRUSION OF COPPER INTO GERMANIUM SINGLE-CRYSTAL DURING ITS GROWING WITH CZOCHRALSKI METHOD, Doklady Akademii nauk. Rossijskaa akademia nauk, 343(6), 1995, pp. 779-780
SILICON AS AN ADVANCED WINDOW MATERIAL FOR HIGH-POWER GYROTRONS
Authors: PARSHIN VV HEIDINGER R ANDREEV BA GUSEV AV SHMAGIN VB
Citation: Vv. Parshin et al., SILICON AS AN ADVANCED WINDOW MATERIAL FOR HIGH-POWER GYROTRONS, International journal of infrared and millimeter waves, 16(5), 1995, pp. 863-877
SPECTRAL CONDENSATION NEAR AN IMPURITY ABSORPTION-LINE IN A GERMANIUM-HOT-HOLE LASER
Authors: MURAVEV AV PAVLOV SG ORLOVA EE SHASTIN VN ANDREEV BA
Citation: Av. Muravev et al., SPECTRAL CONDENSATION NEAR AN IMPURITY ABSORPTION-LINE IN A GERMANIUM-HOT-HOLE LASER, JETP letters, 61(3), 1995, pp. 185-188
COPPER IN ULTRA-PURE GERMANIUM - DETERMINATION OF THE ELECTRICALLY ACTIVE FRACTION
Authors: ANDREEV BA DEVYATYKH GG GAVVA VA GORDEEV DM GUSEV AV MAKSIMOV GA PIMENOV VG SHMAGIN VB TIMONIN DA
Citation: Ba. Andreev et al., COPPER IN ULTRA-PURE GERMANIUM - DETERMINATION OF THE ELECTRICALLY ACTIVE FRACTION, Semiconductor science and technology, 9(5), 1994, pp. 1050-1053
FORMATION OF NEW DONORS AS A RESULT OF HEAT-TREATMENT OF SILICON WITHDIFFERENT OXYGEN CONCENTRATIONS
Authors: ANDREEV BA GOLUBEV VG EMTSEV VV KROPOTOV GI OGANESYAN GA SCHMALZ K
Citation: Ba. Andreev et al., FORMATION OF NEW DONORS AS A RESULT OF HEAT-TREATMENT OF SILICON WITHDIFFERENT OXYGEN CONCENTRATIONS, Semiconductors, 27(4), 1993, pp. 315-323
DETERMINATION OF ELECTRICALLY ACTIVE PART OF COPPER TOTAL CONCENTRATION IN HIGH-PURITY GERMANIUM-CRYSTALS
Authors: DEVYATYKH GG ANDREEV BA GAVVA VA GORDEEV DM GUSEV AV MAKSIMOV GA PIMENOV VG TIMONIN DA SHMAGIN VB
Citation: Gg. Devyatykh et al., DETERMINATION OF ELECTRICALLY ACTIVE PART OF COPPER TOTAL CONCENTRATION IN HIGH-PURITY GERMANIUM-CRYSTALS, Doklady Akademii nauk. Rossijskaa akademia nauk, 329(5), 1993, pp. 600-602
Risultati: 1-9 |