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Results: 1-19 |
Results: 19
RESONANT-CAVITY-ENHANCED AVALANCHE PHOTODIODES GROWN BY MOLECULAR-BEAM EPITAXY ON INP FOR DETECTION NEAR 1.55 MU-M
Authors: ANSELM KA NIE H LENOX C HANSING C CAMPBELL JC STREETMAN BG
Citation: Ka. Anselm et al., RESONANT-CAVITY-ENHANCED AVALANCHE PHOTODIODES GROWN BY MOLECULAR-BEAM EPITAXY ON INP FOR DETECTION NEAR 1.55 MU-M, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1426-1429
RESONANT-CAVITY SEPARATE ABSORPTION, CHARGE AND MULTIPLICATION AVALANCHE PHOTODIODES WITH HIGH-SPEED AND HIGH GAIN-BANDWIDTH PRODUCT
Authors: NIE H ANSELM KA LENOX C YUAN P HU C KINSEY G STREETMAN BG
Citation: H. Nie et al., RESONANT-CAVITY SEPARATE ABSORPTION, CHARGE AND MULTIPLICATION AVALANCHE PHOTODIODES WITH HIGH-SPEED AND HIGH GAIN-BANDWIDTH PRODUCT, IEEE photonics technology letters, 10(3), 1998, pp. 409-411
PERFORMANCE OF THIN SEPARATE ABSORPTION, CHARGE, AND MULTIPLICATION AVALANCHE PHOTODIODES
Authors: ANSELM KA NIE H HU C LENOX C YUAN P KINSEY G CAMPBELL JC STREETMAN BG
Citation: Ka. Anselm et al., PERFORMANCE OF THIN SEPARATE ABSORPTION, CHARGE, AND MULTIPLICATION AVALANCHE PHOTODIODES, IEEE journal of quantum electronics, 34(3), 1998, pp. 482-490
MULTI-STACKED QUANTUM-DOT RESONANT-CAVITY PHOTODETECTOR OPERATING AT 1.06-MU-M
Authors: BAKLENOV O NIE H ANSELM KA CAMPBELL JC STREETMAN BG
Citation: O. Baklenov et al., MULTI-STACKED QUANTUM-DOT RESONANT-CAVITY PHOTODETECTOR OPERATING AT 1.06-MU-M, Electronics Letters, 34(7), 1998, pp. 694-695
EXCESS NOISE IN GAAS AVALANCHE PHOTODIODES WITH THIN MULTIPLICATION REGIONS
Authors: HU C ANSELM KA STREETMAN BG CAMPBELL JC
Citation: C. Hu et al., EXCESS NOISE IN GAAS AVALANCHE PHOTODIODES WITH THIN MULTIPLICATION REGIONS, IEEE journal of quantum electronics, 33(7), 1997, pp. 1089-1093
CHARACTERISTICS OF GAAS AND ALGAAS HOMOJUNCTION AVALANCHE PHOTODIODESWITH THIN MULTIPLICATION REGIONS
Authors: ANSELM KA YUAN P HU C LENOX C NIE H KINSEY G CAMPBELL JC STREETMAN BG
Citation: Ka. Anselm et al., CHARACTERISTICS OF GAAS AND ALGAAS HOMOJUNCTION AVALANCHE PHOTODIODESWITH THIN MULTIPLICATION REGIONS, Applied physics letters, 71(26), 1997, pp. 3883-3885
HIGH-SPEED RESONANT-CAVITY SEPARATE ABSORPTION AND MULTIPLICATION AVALANCHE PHOTODIODES WITH 130 GHZ GAIN-BANDWIDTH PRODUCT
Authors: NIE H ANSELM KA HU C MURTAZA SS STREETMAN BG CAMPBELL JC
Citation: H. Nie et al., HIGH-SPEED RESONANT-CAVITY SEPARATE ABSORPTION AND MULTIPLICATION AVALANCHE PHOTODIODES WITH 130 GHZ GAIN-BANDWIDTH PRODUCT, Applied physics letters, 70(2), 1997, pp. 161-163
MOLECULAR-BEAM EPITAXY GROWTH OF RESONANT-CAVITY SEPARATE-ABSORPTION-AND-MULTIPLICATION AVALANCHE PHOTODIODES
Authors: ANSELM KA MURTAZA SS HU C CAMPBELL JC STREETMAN BG
Citation: Ka. Anselm et al., MOLECULAR-BEAM EPITAXY GROWTH OF RESONANT-CAVITY SEPARATE-ABSORPTION-AND-MULTIPLICATION AVALANCHE PHOTODIODES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2256-2258
A RESONANT-CAVITY, SEPARATE-ABSORPTION-AND-MULTIPLICATION, AVALANCHE PHOTODIODE WITH LOW EXCESS NOISE FACTOR
Authors: ANSELM KA MURTAZA SS HU C NIE H STREETMAN BG CAMPBELL JC
Citation: Ka. Anselm et al., A RESONANT-CAVITY, SEPARATE-ABSORPTION-AND-MULTIPLICATION, AVALANCHE PHOTODIODE WITH LOW EXCESS NOISE FACTOR, IEEE electron device letters, 17(3), 1996, pp. 91-93
HIGH-FINESSE RESONANT-CAVITY PHOTODETECTORS WITH AN ADJUSTABLE RESONANCE FREQUENCY
Authors: MURTAZA SS TAN IH BOWERS JE HU EL ANSELM KA ISLAM MR CHELAKARA RV DUPUIS RD STREETMAN BG CAMPBELL JC
Citation: Ss. Murtaza et al., HIGH-FINESSE RESONANT-CAVITY PHOTODETECTORS WITH AN ADJUSTABLE RESONANCE FREQUENCY, Journal of lightwave technology, 14(6), 1996, pp. 1081-1089
IDENTIFICATION OF FIRST AND 2ND LAYER ALUMINUM ATOMS IN DILUTE ALGAASUSING CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY
Authors: SMITH AR CHAO KJ SHIH CK ANSELM KA SRINIVASAN A STREETMAN BG
Citation: Ar. Smith et al., IDENTIFICATION OF FIRST AND 2ND LAYER ALUMINUM ATOMS IN DILUTE ALGAASUSING CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY, Applied physics letters, 69(9), 1996, pp. 1214-1216
NOISE CHARACTERISTICS OF THIN MULTIPLICATION REGION GAAS AVALANCHE PHOTODIODES
Authors: HU C ANSELM KA STREETMAN BG CAMPBELL JC
Citation: C. Hu et al., NOISE CHARACTERISTICS OF THIN MULTIPLICATION REGION GAAS AVALANCHE PHOTODIODES, Applied physics letters, 69(24), 1996, pp. 3734-3736
NARROW-LINEWIDTH, TUNABLE DISTRIBUTED-FEEDBACK PHOTODETECTOR
Authors: SARATHY J ANSELM KA STREETMAN BG CAMPBELL JC
Citation: J. Sarathy et al., NARROW-LINEWIDTH, TUNABLE DISTRIBUTED-FEEDBACK PHOTODETECTOR, Applied physics letters, 69(21), 1996, pp. 3123-3124
INFLUENCE OF VARIOUS GROWTH-PARAMETERS ON THE INTERFACE ABRUPTNESS OFALAS GAAS SHORT-PERIOD SUPERLATTICES/
Authors: SMITH AR CHAO KJ SHIH CK SHIH YC ANSELM KA STREETMAN BG
Citation: Ar. Smith et al., INFLUENCE OF VARIOUS GROWTH-PARAMETERS ON THE INTERFACE ABRUPTNESS OFALAS GAAS SHORT-PERIOD SUPERLATTICES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1824-1829
HIGH-EFFICIENCY, DUAL-WAVELENGTH, WAFER-FUSED RESONANT-CAVITY PHOTODETECTOR OPERATING AT LONG WAVELENGTHS
Authors: MURTAZA SS TAN IH CHELAKARA RV ISLAM MR SRINIVASAN A ANSELM KA BOWERS JE HU EL DUPUIS RD STREETMAN BG CAMPBELL JC
Citation: Ss. Murtaza et al., HIGH-EFFICIENCY, DUAL-WAVELENGTH, WAFER-FUSED RESONANT-CAVITY PHOTODETECTOR OPERATING AT LONG WAVELENGTHS, IEEE photonics technology letters, 7(6), 1995, pp. 679-681
RESONANT-CAVITY ENHANCED (RCE) SEPARATE ABSORPTION AND MULTIPLICATION(SAM) AVALANCHE PHOTODETECTOR (APD)
Authors: MURTAZA SS ANSELM KA HU C NIE H STREETMAN BG CAMPBELL JC
Citation: Ss. Murtaza et al., RESONANT-CAVITY ENHANCED (RCE) SEPARATE ABSORPTION AND MULTIPLICATION(SAM) AVALANCHE PHOTODETECTOR (APD), IEEE photonics technology letters, 7(12), 1995, pp. 1486-1488
NOVEL HIGH-REFLECTIVITY BRAGG MIRRORS AND RESONANT-CAVITY PHOTODETECTORS
Authors: CAMPBELL JC MURTAZA SS ANSELM KA SRINIVASAN A STREETMAN BG BEAN JC PETICOLAS LJ
Citation: Jc. Campbell et al., NOVEL HIGH-REFLECTIVITY BRAGG MIRRORS AND RESONANT-CAVITY PHOTODETECTORS, Journal of the Korean Physical Society, 28, 1995, pp. 26-31
4-WAVELENGTH BRAGG MIRROR USING GAAS ALAS
Authors: ANSELM KA MURTAZA SS CAMPBELL JC STREETMAN BG
Citation: Ka. Anselm et al., 4-WAVELENGTH BRAGG MIRROR USING GAAS ALAS, Optics letters, 20(2), 1995, pp. 178-179
HIGH-REFLECTIVITY BRAGG MIRRORS FOR OPTOELECTRONIC APPLICATIONS
Authors: MURTAZA SS ANSELM KA SRINIVASAN A STREETMAN BG CAMPBELL JC BEAN JC PETICOLAS L
Citation: Ss. Murtaza et al., HIGH-REFLECTIVITY BRAGG MIRRORS FOR OPTOELECTRONIC APPLICATIONS, IEEE journal of quantum electronics, 31(10), 1995, pp. 1819-1825
Risultati: 1-19 |