Authors:
BERGER MG
ARENSFISCHER R
THONISSEN M
KRUGER M
BILLAT S
LUTH H
HILBRICH S
THEISS W
GROSSE P
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Authors:
GESELE G
LINSMEIER J
DRACH V
FRICKE J
ARENSFISCHER R
Citation: G. Gesele et al., TEMPERATURE-DEPENDENT THERMAL-CONDUCTIVITY OF POROUS SILICON, Journal of physics. D, Applied physics, 30(21), 1997, pp. 2911-2916
Authors:
THUST M
SCHONING MJ
FROHNHOFF S
ARENSFISCHER R
KORDOS P
LUTH H
Citation: M. Thust et al., POROUS SILICON AS A SUBSTRATE MATERIAL FOR POTENTIOMETRIC BIOSENSORS, Measurement science & technology, 7(1), 1996, pp. 26-29
Authors:
EISEBITT S
LUNING J
RUBENSSON JE
VANBUUREN T
PATITSAS SN
TIEDJE T
BERGER M
ARENSFISCHER R
FROHNHOFF S
EBERHARDT W
Citation: S. Eisebitt et al., SOFT-X-RAY EMISSION OF POROUS SILICON NANOSTRUCTURES, Journal of electron spectroscopy and related phenomena, 79, 1996, pp. 135-138
Authors:
FROTSCHER U
ROSSOW U
EBERT M
PIETRYGA C
RICHTER W
BERGER MG
ARENSFISCHER R
MUNDER H
Citation: U. Frotscher et al., INVESTIGATION OF DIFFERENT OXIDATION PROCESSES FOR POROUS SILICON STUDIED BY SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 276(1-2), 1996, pp. 36-39
Authors:
HILBRICH S
THEISS W
ARENSFISCHER R
GLUCK O
BERGER MG
Citation: S. Hilbrich et al., THE INFLUENCE OF THE DOPING LEVEL ON THE OPTICAL-PROPERTIES OF POROUSSILICON, Thin solid films, 276(1-2), 1996, pp. 231-234
Authors:
EISEBITT S
LUNING J
RUBENSSON JE
VANBUUREN T
PATITSAS SN
TIEDJE T
BERGER M
ARENSFISCHER R
FROHNHOFF S
EBERHARDT W
Citation: S. Eisebitt et al., QUANTUM CONFINEMENT EFFECTS IN THE SOFT-X-RAY FLUORESCENCE-SPECTRA OFPOROUS SILICON NANOSTRUCTURES, Solid state communications, 97(7), 1996, pp. 549-552
Authors:
THEISS W
ARNTZEN M
HILBRICH S
WERNKE H
ARENSFISCHER R
BERGER MG
Citation: W. Theiss et al., FROM MINUTES TO MONTHS - AGING OF POROUS SILICON SINGLE LAYERS AND SUPERLATTICES, Physica status solidi. b, Basic research, 190(1), 1995, pp. 15-20