Authors:
RAPTIS I
GLEZOS N
ROSENBUSCH A
PATSIS G
ARGITIS P
Citation: I. Raptis et al., CALCULATION OF ENERGY DEPOSITION IN THIN RESIST FILMS OVER MULTILAYERSUBSTRATES, Microelectronic engineering, 42, 1998, pp. 171-174
Authors:
TEGOU E
GOGOLIDES E
ARGITIS P
BOUDOUVIS A
HATZAKIS M
Citation: E. Tegou et al., SILYLATION OF EPOXY FUNCTIONALIZED PHOTORESISTS FOR OPTICAL, E-BEAM LITHOGRAPHY AND MICROMACHINING APPLICATIONS, Microelectronic engineering, 42, 1998, pp. 335-338
Authors:
ARGITIS P
VASILOPOULOU MA
GOGOLIDES E
TEGOU E
HATZAKIS M
KOLLIA Z
CEFALAS AC
Citation: P. Argitis et al., ETCH RESISTANCE ENHANCEMENT AND ABSORBENCY OPTIMIZATION WITH POLYAROMATIC COMPOUNDS FOR THE DESIGN OF 193 NM PHOTORESISTS, Microelectronic engineering, 42, 1998, pp. 355-358
Authors:
TSOUKALAS D
NORMAND P
AIDINIS C
KAPETANAKIS E
ARGITIS P
Citation: D. Tsoukalas et al., FABRICATION OF SI NANODEVICES BY OPTICAL LITHOGRAPHY AND ANISOTROPIC ETCHING, Microelectronic engineering, 42, 1998, pp. 523-526
Citation: D. Davazoglou et al., OPTICAL CHARACTERIZATION OF THIN ORGANIC FILMS BY ANALYZING TRANSMISSION MEASUREMENTS WITH THE FOROUHI-BLOOMER MODEL, Microelectronic engineering, 42, 1998, pp. 619-622
Authors:
CEFALAS AC
ARGITIS P
KOLLIA Z
SARANTOPOULOU E
FORD TW
STEAD AD
MARRANCA A
DANSON CN
KNOTT J
NEELY D
Citation: Ac. Cefalas et al., LASER-PLASMA X-RAY CONTACT MICROSCOPY OF LIVING SPECIMENS USING A CHEMICALLY AMPLIFIED EPOXY RESIST, Applied physics letters, 72(25), 1998, pp. 3258-3260
Citation: Gp. Patsis et al., THEORETICAL DISCUSSION OF DIFFUSION EFFECTS IN NEGATIVE CHEMICALLY AMPLIFIED RESISTS BASED ON CONTRAST CURVE SIMULATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2561-2564
Authors:
PATSIS G
RAPTIS I
GLEZOS N
ARGITIS P
HATZAKIS M
AIDINIS CJ
GENTILI M
MAGGIORA R
Citation: G. Patsis et al., GEL FORMATION THEORY APPROACH FOR THE MODELING OF NEGATIVE CHEMICALLYAMPLIFIED E-BEAM RESISTS, Microelectronic engineering, 35(1-4), 1997, pp. 157-160
Authors:
GLEZOS N
PATSIS GP
RAPTIS I
ARGITIS P
GENTILI M
GRELLA L
Citation: N. Glezos et al., APPLICATION OF A REACTION-DIFFUSION MODEL FOR NEGATIVE CHEMICALLY AMPLIFIED RESISTS TO DETERMINE ELECTRON-BEAM PROXIMITY CORRECTION PARAMETERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4252-4256
Authors:
RAPTIS I
GRELLA L
ARGITIS P
GENTILI M
GLEZOS N
PETROCCO G
Citation: I. Raptis et al., DETERMINATION OF ACID DIFFUSION AND ENERGY DEPOSITION PARAMETERS BY POINT E-BEAM EXPOSURE IN CHEMICALLY AMPLIFIED RESISTS, Microelectronic engineering, 30(1-4), 1996, pp. 295-299
Authors:
ARGITIS P
RAPTIS I
AIDINIS CJ
GLEZOS N
BACIOCCHI M
EVERETT J
HATZAKIS M
Citation: P. Argitis et al., ADVANCED EPOXY NOVOLAC RESIST FOR FAST HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 3030-3034
Authors:
EVERETT J
PIECHOCKI C
ARGITIS P
HATZAKIS M
Citation: J. Everett et al., SURFACTANT-MODIFIED EPOXY-RESINS AS NOVEL NEGATIVE-ACTING DEEP UV PHOTORESISTS, Journal of applied polymer science, 58(1), 1995, pp. 179-183